Tokyo Electron Limited

Tsuyoshi Hida

Jun Hirose

Mitsunori Ohata

Yohei Uchida

Hidetoshi Kimura

Takashi Yamamoto

Kiyoshi Maeda

Naoki Sugawa

Katsushi Abe

A placement apparatus for placing a workpiece is provided. The placement apparatus includes a stage on which a workpiece can be placed in a processing vessel; an edge ring including a locking part which is disposed on the stage so as to surround a periphery of the workpiece; a conductive connecting member connected with the edge ring at the locking part; and a first contacting member configured to cause the edge ring to contact the stage, while the edge ring is connected with the connecting member.

Workpiece placement apparatus and processing apparatus

There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.

Plasma processing apparatus, plasma processing method and storage medium for storing program for executing the method

There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate, to which a high frequency power is applied; a focus ring, disposed to surround the substrate mounted on the substrate mounting portion, including an outer ringhaving a top surface higher than a top surface of the substrate and an inner ringextending inwardly from the outer ring so as to allow at least a part of the inner ring to be positioned below a periphery of the substrate, the outer ring and the inner ring being formed as a single member; a dielectric ringpositioned between the focus ring and the susceptor; a dielectric constant varying devicefor varying a dielectric constant of the dielectric ring.

An electrostatic chuck of a stack structure includes a metal layer interposed between insulating layers and a groove formed at a peripheral portion of the electrostatic chuck to have a thickness gradually increasing toward an outside, the groove being covered with a thermally sprayed insulating film. The thermally sprayed film covers at least a portion of the metal layer exposed at an inside of the groove such that the thermally sprayed film does not protrude from the groove.

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Nirasaki, Japan

Tsuyoshi Hida