Denso Corporation

Tsuyoshi Fujiwara

Youichi Ashida

Kazuo Akamatsu

Youhei Oda

Seiji Noma

A semiconductor device includes a semiconductor substrate and an electrode. The electrode is electrically connected to the semiconductor substrate and located on the semiconductor substrate. The electrode has a lower metal layer, an upper metal layer and an intermediate layer. The lower metal layer is located at a side closer to the semiconductor substrate. The upper metal layer is located above the lower metal layer. The intermediate layer is located between the lower metal layer and the upper metal layer. Each of the lower metal layer and the upper metal layer is made of aluminum or an aluminum alloy. In the aluminum alloy, an element is added to aluminum. The intermediate layer is made of material that is more difficult to react with a hydroxyl group than the lower metal layer and the upper metal layer.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a plurality of capacitors with MIM structure disposed in an interconnection layer on a substrate. Each capacitor includes a first electrode and a second electrode provided by any two interconnection parts of the interconnection layer, in which the first electrode is one of the two interconnection parts located adjacent to the substrate and the second electrode is the other located opposite to the substrate with respect to the first electrode. One of the first and second electrode of each capacitor is provided by the same interconnection part as a subject electrode, and a distance between the first electrode and the second electrode is different among the plurality of capacitors to have different capacitances. The subject electrodes provided by the same interconnection part are covered with an insulating film of the interconnection layer, and have ends on a same plane.

Semiconductor device with multiple metal-insulator-metal capacitors and method for manufacturing the same

A semiconductor device includes a semiconductor substrate, an interlayer dielectric film, a plurality of pad parts, a wiring layer, and a surface protection film. The semiconductor substrate includes a semiconductor element on a surface of the semiconductor substrate. The interlayer dielectric film is disposed on the surface of the semiconductor substrate. The wiring layer is disposed in the interlayer dielectric film. The hard film is disposed opposite to the semiconductor substrate with respect to the interlayer dielectric film, and is harder than the interlayer dielectric film. The pad parts are disposed opposite to the interlayer dielectric film with respect to the hard film. The surface protection film is disposed in at least an opposing region where the pad parts oppose to each other. The surface protection film is a silicon nitride film or a silicon oxide film.

Semiconductor device

Roughness is eliminated and planarization is achieved by a metal oxide film on a surface of a lower electrode. Consequently, damage on a capacitive film caused by the roughness of the lower electrode is reduced. Furthermore, physical damage on the capacitive film is reduced by forming a first layer of an upper electrode by, for example, CVD. Consequently, the damage on the capacitive film is suppressed, and the reliability of the capacitive film is improved. Furthermore, not by forming the whole upper electrode by the CVD or the like, but by forming a second layer by PCD or the like on the first layer, an increase in resistance of the upper electrode is suppressed as well.

Growing community of inventors

Kariya, Japan

Tsuyoshi Fujiwara