Toshiba Memory Corporation

Kioxia Corporation

Oki Electric Industry Co., Ltd.

Kabushiki Kaisha Toshiba

Tsuyoshi Atsumi

Yasuhiko Kurosawa

Masanobu Shirakawa

Yuji Nagai

Yohei Koganei

Tokumasa Hara

Naoya Tokiwa

Hiroji Akahori

Hidetaka Tsuji

Tomoyuki Kantani

Hideaki Yamamoto

A semiconductor device of an embodiment includes a seed generator circuit configured to generate a seed from inputted data by using first random number sequence data generated by an XorShift circuit; and a random number generator circuit configured to receive the seed as input to generate second random number sequence data by a second XorShift circuit.

Semiconductor device and semiconductor storage device

A randomizer includes a first pseudorandom number generator, a second pseudorandom number generator, and a first logic circuit configured to output a pseudorandom sequence by carrying out an operation on a pseudorandom sequence generated by the first pseudorandom number generator and a pseudorandom sequence generated by the second pseudorandom number generator, and a second logic circuit configured to randomize a data string input to the randomizer based on the pseudorandom sequence output by the first logic circuit.

Randomization of data using a plurality of types of pseudorandom number generators

A semiconductor memory device includes a NAND memory including a plurality of blocks, each of which is a unit of data erasing, and a controller. The controller is configured to select an initial value from a group of initial values, based on an address of the NAND memory in which data are to be written, set a value corresponding to the selected initial value to a linear feedback shift register circuit, randomize the data using an output value of the linear feedback shift register circuit, and write the randomized data to the address of the NAND memory. A size of each of the blocks S is smaller than 2bytes, n being a number of registers included in the linear feedback shift register circuit.

Semiconductor memory device that randomizes data and randomizer thereof

According to one embodiment, a distribution of threshold voltages of a plurality of memory cells is acquired from a nonvolatile memory which includes the plurality of memory cells, a malfunction state occurring in the nonvolatile memory is identified based on a shape of the distribution, and a read voltage when data is read out of the nonvolatile memory is set to a voltage value corresponding to a type of the malfunction state.

Memory controller, memory control method, and coefficient decision method

According to one embodiment, a temperature of a non-volatile memory or an ambient temperature of the non-volatile memory is acquired. A distribution of a threshold voltage, which is corrected according to the acquired temperature, is acquired from the non-volatile memory. Read voltages related to the reading of data are detected from the distribution. Error correction is performed for data read from the non-volatile memory, using the read voltages. The detected read voltages are separately corrected on the basis of the acquired temperature when the error correction has failed.

Memory controller, storage device, and read retry method

According to one embodiment, a memory system includes a nonvolatile semiconductor memory and a memory controller. The memory controller has a first signal generation section that generates a first signal related with a read voltage used for read operation of the nonvolatile semiconductor memory, a second signal generation section that generates a second signal that specifies the temperature coefficient used for the correction for temperature of the read voltage, and a first interface section that outputs the first signal, the second signal and a read command. The nonvolatile semiconductor memory has a word line, a memory cell array includes memory cells connected to the word line, and a second interface section that receives the first signal, the second signal and the read command.

Memory controller, nonvolatile semiconductor memory device and memory system

A modem generates a new RSSI threshold value in response to a flag signal representing the quality of the threshold value indicated by the result of error detection supplied from one monitor, and supplies the generated threshold value to another monitor. The RSSI threshold value set in the other monitor is rendered variable, the modem thus being able to operate with the threshold value converging precisely in a short time.

Data receiver adaptive to RSSI and a method of determining its threshold

A mobile communications system includes an RF processor for transmitting and receiving radio signals to and from a base station, and a base-band processor for spread-spectrum coding a frame signal to be transmitted to transfer it to the RF processor and spread-spectrum decoding a signal transferred from the RF processor to extract a frame signal. The base-band processor includes a rake receiver for demodulating the received signal and a cell selector and processor for selecting a cell to be connected based upon the propagation path and the power of the received signal. The cell selector and processor includes a search circuit for detecting a cell from the received signal, a cell operator for determining a cell from which received is a signal associated with a shorter propagation path, based on the reception timing of the received signal, and a connecting cell selector for selecting a cell to be connected.

Growing community of inventors

Ota, Japan

Tsuyoshi Atsumi