Asahi Kasei Microdevices Corporation

Eisai R&d Management Co., Ltd.

Tsuyoshi Akagi

Tetsuya Takahashi

Takaaki Furuya

Tomoya Shoji

Ken Sasai

Taiko Sukezane

A Hall element including a contact is provided. A Hall element is provided, including: a substrate; a magnetosensitive portion formed on the substrate; an insulating film formed on the magnetosensitive portion; and a conductive portion which is formed on the insulating film, extends from a peripheral region of the magnetosensitive portion toward a central region of the magnetosensitive portion, penetrates the insulating film, and is electrically connected to the magnetosensitive portion, wherein when observing a cross section passing through a center of the magnetosensitive portion in plan view and a portion at which the conductive portion is in contact with the magnetosensitive portion, at least a part of the conductive portion extends below the insulating film in the cross section.

Hall element for mitigating current concentration and fabrication method thereof

A Hall sensor having a ball portion on a magnetosensitive portion is provided. A Hall sensor is provided, including: a substrate; a magnetosensitive portion formed on the substrate; an insulating film formed on the magnetosensitive portion; an electrode portion formed on the insulating film; and a ball portion which is provided on the electrode portion and is electrically connected to the electrode portion, wherein in plan view, a projection area of the ball portion accounts for 10% or more of a projection area of the magnetosensitive portion. The projection area of the ball portion may account for 20% or more of the projection area of the magnetosensitive portion. A bonding wire which is electrically connected to the ball portion and is extended from the ball portion in a direction perpendicular to an upper surface of the electrode portion may be further included.

Hall sensor

A hall element is provided to suppress fluctuation in a Hall output voltage of the hall element which is generated due to a fluctuation in stress. The hall element may be formed to include a substrate, a magnetosensitive portion formed on the substrate, an insulating film formed on the magnetosensitive portion, four conductive portions (electrode portions and contact portions) which are formed on the insulating film, electrically connected to the magnetosensitive portion through the insulating film, and disposed at positions serving as vertexes of a quadrangle, and ball portions electrically connected to the conductive portions, and at least one ball portion is disposed on a diagonal line of the quadrangle formed by a region surrounded by the four conductive portions and above a portion where the conductive portion and the insulating film are in contact with each other.

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Tokyo, Japan

Tsuyoshi Akagi