Sanyo Electric Co., Ltd.

Other

Sony Corporation

Tsutomu Yamada

Kiyoshi Yoneda

Nobuhiko Oda

Ryuji Nishikawa

Shiro Nakanishi

Satoshi Ishida

Yasuo Segawa

Yoshihiro Morimoto

Ryoichi Yokoyama

Koji Suzuki

Naoaki Komiya

Norio Koma

Masaaki Aota

Kazuhiro Inoue

Ken Wakita

Takashi Kuwahara

Kazuhiro Imao

Shinji Ogawa

Hidenori Ogata

Shinji Yuda

Yasushi Miyajima

Keiichi Sano

Yushi Jinno

Katsuya Anzai

Yasushi Shimogaichi

Yasuo Nakahara

Norio Tabuchi

Kyoko Hirai

Hiroyuki Kuriyama

Tohru Yamashita

Kazuyuki Maeda

Masahiro Okuyama

Masashi Mitsui

Toshifumi Yamaji

Susumu Oima

Masayuki Kametani

A vertical alignment liquid crystal layer is sealed between a first substrate having a first electrode and a second substrate having a second electrode, each pixel region has a reflective region and a transmissive region, and a gap adjusting section is provided on one of sides of the first substrate and the second substrate which sets a thickness (gap) d of the liquid crystal layer which controls a phase difference of incident light to the liquid crystal layer so that a gap dr in the reflective region is smaller than a gap dt in the transmissive region. An alignment controller which divides alignment of the liquid crystal within a pixel region is provided in the pixel region on at least one of the sides of the first substrate and the second substrate. It is also possible to optimize by changing the gap in red, green, and blue.

Transflective liquid crystal display device and color liquid crystal display device

On a first substrate are formed a TFT provided to each pixel, an insulating film which covers the TFT, and a reflective layer which is provided on the insulating film so as to be insulated from the TFT and reflects light incident from a second substrate side. The reflective layer is covered with a passivation film on which a first electrode made of a transparent conductive material, such as ITO having the work function equivalent to a second electrode, is formed and connected to the TFT. The passivation film covering the reflective layer prevents the reflective surface of the reflective layer from deteriorating in reflection properties during a process for connecting the TFT and the first electrode. Further, the first and second electrodes having similar characteristics can symmetrically AC drive the liquid crystal layer.

Display apparatus and manufacturing method thereof

A reflective layer for reflecting light incident from a second substrate side and transmitting through a second electrode made of ITO or the like is formed above a first substrate, a switching element provided for each pixel, and an insulating film covering the switching element, the reflective layer being insulated from the switching element. A first electrode having a work function similar to the second electrode and made of a transparent conductive material such as ITO is formed more proximate to a liquid crystal layer than is the reflective layer and is connected to the switching element. The thickness of the first electrode is set to 100 &#x212b; or less or in a range approximately from 750 &#x212b; to 1250 &#x212b;. Alternatively, the switching element maybe connected to the reflective electrode, the first electrode and the reflective electrode which are formed with an insulating film therebetween may be capacitively coupled, and the first electrode may be driven by the reflective electrode via the capacitor.

Liquid crystal display apparatus having reflective layer

For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

Laser anneal method of a semiconductor layer

Liquid crystal display apparatus having insulated reflective layer and manufacturing method thereof

A gate line is severed before the gate line reaches an Output portion of a vertical driving circuit of a display device, and the separated gate lines are connected by a metal wiring in an upper layer. The gate line is, for example, made of molybdenum, chrome, a molybdenum alloy or a chrome alloy, and the metal is made of aluminum or an aluminum alloy. Since the gate line is severed, the voltage stored in the gate line during the manufacturing process will not be discharged to the gate wiring of the thin film transistor, preventing the break down of the gate insulating layer of the thin film transistor.

Display device

According to the present invention, there is provided a display, in which the degradation of a displaying quality caused by a turbulently reflected light beam at the time of exposure can be suppressed. The display according to the present invention having a reflective region and a transmissive region comprises a projecting insulating layer formed in a region corresponding to the reflective region on a substrate and a light shielding layer formed under the projecting insulating layer and formed to extend at least up to a region in which a side end of the projecting insulating layer is located.

Display

Side faces of anodes have a tapered incline that becomes broader toward a lower layer. Thus, an emissive element layer is smoothly formed on the anodes making it possible to prevent field contraction of the electric field. An EL display apparatus having long life and high yield is provided by preventing the emissive element layer from rupturing between an anode and a cathode and by preventing concentration of the electric field at an upper edge of the anode facing the cathode and localized deterioration in the emissive element layer.

Electroluminescence display apparatus

A first semiconductor layer that makes a capacitance coupling with a gate electrode of a thin film transistor through a gate insulating layer and a second semiconductor layer that makes a capacitance coupling with a storage capacitor line of a storage capacitor through the gate insulating layer are formed separately. Also, the first semiconductor layer and the second semiconductor layer are connected by a metal wiring. The gate electrode of the thin film transistor makes capacitance coupling with the first semiconductor layer and the storage capacitor line of the storage capacitor makes capacitance coupling with the second semiconductor layer independently. Voltage are induced in the first semiconductor layer and the second semiconductor layer independently. Since there will be no big discrepancy in voltage in the gate insulating layer, the dielectric break down and the leakage can be prevented.

Semiconductor device with isolated storage capacitor and its manufacturing method

Liquid crystal display apparatus having a transparent layer covering a reflective layer

EL display elements are configured by sequentially laminating an anode, an emissive layer and a cathode, and emit light of R, G, and B. Each EL display element is supplied with a drive current from an EL element driving TFT. The transistor sizes of the EL element driving TFTs connected to the display pixels for respective colors are designated such that the size of the TFT for a green display pixel including an EL element having the highest emissive efficiency is the smallest, and the sizes of the TFTs for red and blue display pixels having sequentially decreasing emissive efficiency are made sequentially larger.

Color display device

In an active matrix type display having built-in drivers, a metal layer is formed over a portion of a transparent substrate and a buffer layer is provided over both the region where the metal layer is formed and over the region where the metal layer is not formed. Above the buffer layer, a first polycrystalline silicon film is provided over the region where the metal layer is formed and a second polycrystalline silicon film is provided over the region where the metal layer is not formed. A buffer layer with sufficient thickness and thermal capacity can provide sufficient distance between the active layers and the lower metal layer to alleviate thermal leakage caused by the metal layer. A first polycrystalline silicon film and a second polycrystalline film each having a proper grain size can be obtained through laser annealing applied under the same conditions on an amorphous silicon film formed over the buffer layer.

Method of forming active matrix type display including a metal layer having a light shield function

A supported glass substrate is placed with an element-forming surface thereof facing downward. A mother sealing substrate is placed on a support made of a quartz glass or the like. An ultraviolet-curing sealing resin is applied on the mother sealing substrate. After the glass substrate is aligned with the mother sealing substrate, the glass substrate is pressed toward the sealing substrate. The sealing resin is irradiated with ultraviolet light transmitted through the sealing substrate.

Manufacturing method of electroluminescence display apparatus

In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film () to 5&#xd7;10atoms/cmat most but also to prevent crystallization of the a-Si film () being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film () covered with an interlayer insulation film () in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350&#xb0; C. to 400&#xb0; C. for one to three hours, more preferably 400&#xb0; C. for two hours. The result is that hydrogen atoms in the p-Si film () efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.

Semiconductor device and method of manufacturing the same comprising thin film containing low concentration of hydrogen

Growing community of inventors

Gifu, Japan

Tsutomu Yamada