Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Tsutomu Ukai

Masaya Mannoh

Toshiya Fukuhisa

Yoshiyuki Matsuki

In a constitution where a first clad layer is formed on a semiconductor substrate, an active layer having the strained multiple quantum well structure is formed on the first clad layer, and a second clad layer is formed on the active layer, the sum of products of strain amounts and film thickness in the active layer is set to a negative value.

Semiconductor laser device

A semiconductor laser device in which a red semiconductor laser device and an infrared semiconductor laser device are located on a single substrate, and an end-face window structure is formed simultaneously. The hydrogen concentration (1.5ecm) of a fourth clad layer () of the infrared semiconductor laser device is higher than the hydrogen concentration (1ecm) of a second clad layer () of the red semiconductor laser device which is a first semiconductor laser device, whereby an active layer of the infrared semiconductor laser device can be sufficiently disordered in the semiconductor laser device.

Semiconductor laser device and method of manufacturing the same

A semiconductor laser device includes an n-type cladding layermade of ntype (AlGa)InP, an undoped active layerand a first p-type cladding layermade of ptype (AlGa)InP. These layers are successively stacked in bottom-to-top order. The active layerhas a multi-quantum well structure composed of a first optical guide layer of undoped AlGaAs, a layered structure in which well layers of undoped GaAs and barrier layers of undoped AlGaAs are alternately formed, and a second optical guide layer of undoped AlGaAs. The first optical guide layer, the layered structure and the second optical guide layer are successively stacked in bottom-to-top order.

Semiconductor laser device, semiconductor laser system, optical pickup module and manufacturing for semiconductor laser system

A semiconductor laser device comprises an n-type cladding layermade of ntype (AlGa)InP, an undoped active layerand a first p-type cladding layermade of ptype (AlGa)InP. These layers are successively stacked in bottom-to-top order. The active layerhas a multi-quantum well structure composed of a first optical guide layer of undoped AlGaAs, a layered structure in which well layers of undoped GaAs and barrier layers of undoped AlGaAs are alternately formed, and a second optical guide layer of undoped AlGaAs. The first optical guide layer, the layered structure and the second optical guide layer are successively stacked in bottom-to-top order.

Growing community of inventors

Okayama, Japan

Tsutomu Ukai