Kabushiki Kaisha Toshiba

Tsutomu Uemoto

Shinichi Kawamura

Hiroshi Mitsuhashi

Atsushi Kamata

Kaichi Fukuda

Hideo Hirayama

Shigetaka Toriyama

Hidetoshi Fujimoto

Nawoto Motegi

Takao Ogasawara

A thin film transistor (TFT) is provided with a precisely, lightly doped drain (LDD) structure formed on a substrate of insulators, such as a glass sheet. A method of making the TFT and a liquid crystal display device with the same are disclosed. The TFT with the LDD structure include a side wall and a gate insulation layer. An intermediate layer is provided between the side wall and the gate insulation layer. The intermediate layer is different in layer property from the side wall. When the side wall is formed by an anisotropic etching process, the etching can be stopped on the surface of intermediate layer. As a result, the gate insulation layer and the substrate are protected against the etching.

Thin film transistor, method of manufacturing the same and thin film transistor liquid crystal display device

Method of manufacturing thin film transistor

The method of manufacturing a thin film transistor, including the steps of: a first step, after a poly-crystal silicon film has been formed on a substrate (1), for forming a layer to be formed as an conductive layer (2a) for the thin film transistor by patterning the formed polycrystal silicon film; a second step for doping impurity ions at the layer to be formed as the conductive layer; a third step for cooling the substrate by a cooling mechanism after the second step; and a fourth step for forming a source region (4a.sub.1) and a drain region (4a.sub.2) in the conductive layer, respectively by repeating the second and third steps. By this method, impurities can be doped at microscopic regions, and further the highest possible throughput can be obtained.

Disclosed is a semiconductor device such as a light emitting diode, a MOS transistor, a Schottky diode, and CCD. The semiconductor device comprises a SiC layer of a first conductivity type and another SiC layer of a second conductivity type. At least one of the SiC layers of the first and second conductivity types is doped with at least one element selected from the group consisting of Cr, Mo and W.

Semiconductor device

AlN is added to a SiC light emitting layer of an optical semiconductor device in a molecular state, and an association of AlN is formed between crystal lattice points, which are close to each other in said light emitting layer. Said association is largely different from said SiC in degree of electron negativity so that said association traps a carrier in said light emitting layer, and forms an exciton.

Optical semiconductor device

An optical semiconductor device is provided with a p-type ZnSe semiconductor layer. Si, Cl and O atoms are added, as dopants, to the ZnSe semiconductor layer. Associations of the Si, Cl and O atoms are formed to define a shallow acceptor level in the semiconductor layer. Each of the associations comprises one Si atom, one Cl atom and one O atom by which the lattice points of Se are displaced between those crystal lattice points in the semiconductor layer which are adjacent to one another.

Growing community of inventors

Yokohama, Japan

Tsutomu Uemoto