Winbond Electronics Corporation

Tsutomu Taniguchi

Makoto Senoo

Sho Okabe

Katsutoshi Suito

A continuous readout method of a flash memory is provided. Selected bit lines (BL, BL, BL, and BL) are masked by three non-selected bit lines when data of a cache memory (C) of a selected page of a memory cell array is read. Selected bit lines (BL, BL, BL, and BL) are masked by three non-selected bit lines when data of a cache memory (C) of the same selected page is read. In this way, each of first page data and second page data read from a plurality of selected pages is continuously outputted.

Semiconductor device and continuous reading method

A continuous reading method of a flash memory is provided, including: after outputting data held in a cache memory (C) of a latch (L) of a page buffer/sensing circuit, data of the cache memory (C) of a next page is read from a memory cell array, and the read data of the cache memory (C) is held in the latch (L). After outputting data held in the cache memory (C) of the latch (L), data of the same next page of the cache memory (C) is read from the memory cell array, and the read data of the cache memory (C) is held in the latch (L).

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Kanagawa, Japan

Tsutomu Taniguchi