Canon Kabushiki Kaisha

Tsutomu Takenaka

Kazuhiko Mishima

Seiya Miura

An exposure apparatus includes a controller configured to control scanning of an original holding unit and a substrate holding unit to expose a first pattern forming area onto a plurality of second pattern forming areas formed in advance on the substrate. The first pattern forming area is superimposed on the plurality of second pattern forming areas. An original may include the first pattern forming area in plural. The controller is configured to change the operation of the original holding unit or the substrate holding unit among the plurality of second pattern forming areas based on a state of the second pattern forming areas or a state of the first pattern forming areas while the first pattern forming areas are scanning-exposed onto the plurality of second pattern forming areas in a single scanning between the original holding unit and the substrate holding unit.

Exposure apparatus, exposure method, and device manufacturing method

An exposure apparatus comprises an original stage which holds an original, a substrate stage which holds a substrate, and a control unit which controls a measurement process of measuring a relative position between the original and substrate stages, wherein original-side measurement marks including an original-side rough-measurement mark and an original-side fine-measurement mark are formed on the original stage, substrate-side measurement marks including a substrate-side rough-measurement mark and a substrate-side fine-measurement mark are formed on the substrate stage, and the control unit controls the measurement process to perform rough measurement of the relative position between the original and substrate stages using the original-side and the substrate-side rough-measurement marks, correct the relative position between the original and substrate stages based on the result of the rough measurement, and then perform fine measurement of the relative position between the original and substrate stages using the original-side and substrate-side fine-measurement marks.

Exposure apparatus and device manufacturing method

An exposure apparatus comprises a measurement system which measures an aberration of a projection optical system. The measurement system includes a first pattern positioned on an original stage, a second pattern positioned on a substrate stage, a third pattern positioned on the original stage to align the first and second patterns, a fourth pattern positioned on the substrate stage to align the first and second patterns, a detection system which detects a relative position between the third pattern and the fourth pattern, and a controller which controls at least one of the stages to align the first pattern positioned at a position spaced apart from the third pattern by a predetermined distance, and the second pattern positioned at a position spaced apart from the fourth pattern by a predetermined distance, based on the relative position between the third pattern and the fourth pattern detected by the detection system.

Exposure apparatus and method of manufacturing device

An exposure apparatus which projects a pattern of an original onto a substrate by a projection optical system, comprises a measurement device configured to measure a relative position between an original stage and a substrate stage via the projection optical system using an original-side fiducial plate and a substrate-side fiducial plate, and a controller, the original-side fiducial plate including first and second original-side marks, and the substrate-side fiducial plate including first and second substrate-side marks, wherein the controller is configured to control imaging characteristics of the projection optical system so that measurement of the relative position between the original stage and the substrate stage using the first original-side mark and the first substrate-side mark and measurement of the relative position between the original stage and the substrate stage using the second original-side mark and the second substrate-side mark can be performed simultaneously.

An exposure apparatus includes an illumination optical system configured to illuminate an original with exposure light from an exposure light source, a projection optical system configured to project a pattern of the original onto a substrate, and a measuring unit configured to measure a relative position between the original and the substrate via the projection optical system using the exposure light as measurement light. The exposure apparatus exposes the substrate using the exposure light with a plurality of wavelengths or a broadband wavelength upon aligning the original and the substrate based on the measurement result obtained by the measuring unit, and the measuring unit switches a wavelength of the exposure light as the measurement light to a specific wavelength or a narrow-band wavelength in measuring the relative position between the original and the substrate.

The invention disclosed herein concerns technology that ensures, in a projection exposure process using a transmission type reticle, exposure with an even finish size throughout the entire exposure region, without adverse influence of external disturbance light such as back-surface reflection, for example. Specifically, the invention provides a reticle, a semiconductor exposure apparatus and method, and a semiconductor device manufacturing method, wherein a reticle used there includes a pattern region in which a circuit pattern is formed, a light blocking region of a width d formed at an outside periphery of the pattern region, and an anti-reflection film formed on a surface of the reticle remote from the pattern region, wherein the width d of the light blocking film satisfies a relation where nis a refractive index of a medium at a light entrance side of the reticle, nis a refractive index of the reticle, t is a thickness of the reticle, and &#x3b8; is an incidence angle of light upon the reticle.

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Utsunomiya, Japan

Tsutomu Takenaka