Jsr Corporation

Japan Synthetic Rubber Co., Ltd.

International Business Machines Corporation

National Institute of Infectious Diseases

Jsr Life Sciences Corporation

Tsutomu Shimokawa

Tomoki Nagai

Toru Kajita

Masafumi Yamamoto

Daisuke Shimizu

Yukio Nishimura

Akihiro Hayashi

Toshiyuki Kai

Haruo Iwasawa

Jun Numata

Isao Nishimura

Hikaru Sugita

Nobuo Bessho

Yong Wang

Eiji Yoneda

Masaaki Miyaji

Hiroyuki Ishii

Masato Tanaka

Eiichi Kobayashi

Atsushi Kumano

Makoto Sugiura

Nobuji Matsumura

Takuma Ebata

Hiroshi Ikeda

Hiroshi Ito

Ken Maruyama

Makoto Shimizu

Yuji Yada

Kenji Yamada

Kiyoshi Murata

Takanori Kawakami

Kazuo Kawaguchi

Noboru Yamahara

Satoru Nishiyama

Katsuji Douki

Katsuhiko Hieda

Takashi Doi

Junichi Takahashi

Hiroaki Nemoto

Masayuki Endo

Takao Miura

Yoshiji Yumoto

Hideaki Masuko

Keiji Konno

Takayoshi Abe

Norihiro Natsume

Kouichi Fujiwara

Akimasa Soyano

Tatsuya Toneri

Tomohiro Kakizawa

Atsushi Itou

Hiromichi Hara

Shigeo Shimizu

Aki Suzuki

Atsufumi Shimada

Masato Suzuki

Hidenori Naruse

Fumihisa Miyajima

Kazuhiro Ikkyuu

Mari Matsui

Hiroto Kubo

Satowa Suzuki

Shigeru Ikawa

Keigo Shibayama

Yasuaki Mutsuga

Provided is a polymer having antimicrobial and disinfecting properties against a wide range of kinds of germs. A polymer, including: a polymer chain having a repeating unit represented by the following formula (1); and a partial structure (excluding the polymer chain) derived from a compound containing a group represented by &#x2014;NH&#x2014;. [In formula (1), Rrepresents a hydrogen atom or a methyl group, Z represents a group forming an organic ammonium salt, &#x2014;NRR(where Rand Reach independently represent a hydrogen atom, or a substituted or unsubstituted hydrocarbon group), or a substituted or unsubstituted nitrogen-containing heterocyclic group, and X represents a single bond, or a divalent linking group.] 

Polymer, antimicrobial agent, disinfectant, antimicrobial material, disinfectant material, antimicrobial method, and disinfecting method

The invention is an adherend recovery method capable of recovering adherends such as cells no matter the types of adherends. An adherend recovery method for recovering an adherend from a support includes exposing a stack disposed on the support, the stack including a photosensitive gas generation layer, an adhesive layer and the adherend in this order on the support, generating a gas from the photosensitive gas generation layer by the exposure to separate the support and the stack from each other by the action of the gas, and recovering the adherend from the support by recovering the stack separated.

Adherend recovery method, adherend recovery apparatus, gas-generating film and resin composition

A radiation-sensitive resin composition comprising an acid-labile group-containing resin obtained by living radical polymerization having a specific structure which is insoluble or scarcely soluble in alkali, but becomes alkali soluble by the action of an acid, and a photoacid generator, wherein the ratio of weight average molecular weight to number average molecular weight (weight average molecular weight/number average molecular weight) of the acid-labile group-containing resin is smaller than 1.5.

Radiation-sensitive resin composition

A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.

Pattern forming method

A radiation-sensitive resin composition includes a resin, a radiation-sensitive acid generator, an acid diffusion controller, and a mixed solvent. The radiation-sensitive acid generator includes a compound (I) shown by a following general formula (I). The mixed solvent includes about 50 mass % to about 90 mass % of propylene glycol monomethyl ether acetate, wherein Mrepresents a sulfonium cation or an iodonium cation, R represents a hydrogen atom or a hydrocarbon group having 1 to 8 carbon atoms, Rf represents a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, n represents an integer from 1 to 10, and m represents an integer from 1 to 4.

A compound shown by the following formula (1). 

Compound and radiation-sensitive composition

A pattern forming method includes (1) selectively exposing a first resist layer, and developing the exposed first resist layer to form a first pattern, (2) applying a resin composition containing a hydroxyl group-containing resin and a solvent to the first pattern, baking the applied resin composition, and developing the baked resin composition to form a second pattern, the hydroxyl group-containing resin becoming insoluble or scarcely soluble in a developer when baked, and (3) totally or selectively exposing the second pattern to make the second pattern partly soluble in the developer, and developing the exposed second pattern to form a third pattern in which at least a hole or a groove is formed in the second pattern.

Method for pattern formation and resin composition for use in the method

A compound shown by the following formula (1) can be used as a material for a radiation-sensitive composition capable of forming a resist film which effectively responds to electron beams or the like, exhibits low roughness, and can form a high precision minute pattern in a stable manner. 

A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.

Method of forming pattern and composition for forming of organic thin-film for use therein

A pattern formation method suitable for forming micro-patterns using electron beams (EB), X-rays, or extreme ultraviolet radiation (EUV) is provided. The method includes the following steps in the following order: (1) a step of forming and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate, (2) a step of irradiating the under-layer film with radiation through a mask to cause an acid to be selectively generated in the exposed area of the under-layer film, (3) a step of forming an upper-layer film which does not contain a radiation-sensitive acid generator, but contains a composition capable of polymerization or crosslinking by the action of an acid, (4) a step of forming a cured film by polymerization or crosslinking selectively in the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has been generated, and (5) a step of removing the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has not been generated.

Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film

A compound is shown by the following formula (5) in which at least one of Rgroups represents a fluorine atom or a linear or branched perfluoroalkyl group having 1 to 10 carbon atoms, A' represents a substituted or unsubstituted, linear or branched alkylene group having 1 to 20 carbon atoms, an alkylene group having at least one hetero atom, or a single bond, G represents a divalent organic group having a fluorine atom or a single bond, Mrepresents an onium cation, m represents a natural number of 1 to 3, and p represents a natural number of 1 to 8. 

Sulfonium compound

A radiation-sensitive resin composition is provided which has high transparency to radiation, excelling in basic properties as a resist such as sensitivity, resolution, and pattern shape, and, in particular, a high resolution radiation-sensitive resin composition providing a wide DOF and excelling in LER. Also provided are a polymer which can be used in the composition and a novel compound useful for synthesizing the polymer. The novel compound is shown by the following formula (2), wherein Rrepresents a methyl group, a trifluoromethyl group, or a hydrogen atom, at least one of the Rs represents a fluorine atom or a linear or branched perfluoroalkyl group having 1 to 10 carbon atoms, A represents a divalent organic group or a single bond, G represents a divalent organic group having a fluorine atom or a single bond, Mrepresents a metal ion or an onium cation, m represents an integer of 1 to 3, and p is an integer of 1 to 8.

Compound, polymer, and radiation-sensitive composition

A radiation-sensitive resin composition comprising (A) a resin containing a structural unit of the following formula (I), (B) a resin containing a recurring unit of the following formula (II), and (C) a photoacid generator, wherein Rrepresents a substituted or unsubstituted divalent (alicyclic) hydrocarbon, Rrepresents a lower alkyl group or a monovalent (substituted) alicyclic hydrocarbon group, or any two Rs form in combination a divalent (substituted) alicyclic hydrocarbon group, with the remaining Rbeing a lower alkyl group or a monovalent (substituted) alicyclic hydrocarbon group, wherein Rrepresents a hydrogen atom, fluorine atom, or trifluoromethyl group, Rrepresents a (substituted) hydrocarbon group with a valence of (c+1), (substituted) alicyclic hydrocarbon with a valence of (c+1), or (substituted) aromatic group with a valence of (c+1), Rrepresents a hydrogen atom or a monovalent acid-dissociable group, a and b individually represent an integer of 0-3, provided that (a+b)&#x2267;1 is satisfied, and c is an integer of 1-3. The radiation-sensitive resin composition has a high transparency at a wavelength of 193 nm or less and is particularly excellent in LER.

Radiation sensitive resin composition

A radiation-sensitive resin composition comprising (A) an acid-dissociable group-containing polysiloxane and (B) a photoacid generator containing trifluoromethane sulfonic acid or a compound which generates an acid of the following formula (I), wherein Rf individually represents a fluorine atom or a trifluoromethyl group, and Ra represents a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1-20 carbon atoms, or a linear or branched fluoroalkyl group having 1-20 carbon atoms, a substituted or unsubstituted monovalent cyclic hydrocarbon group having 3-20 carbon atoms, or a substituted or unsubstituted monovalent cyclic fluoro-hydrocarbon group having 3-20 carbon atoms. The radiation-sensitive resin composition of the present invention exhibits superior resolution, while maintaining high transparency to radiations and high dry etching resistance. The resin composition thus can greatly contribute to the lithography process that will become more and more minute in the future.

A pattern forming method comprising forming a coating of a radiation-sensitive resin composition, which contains an acid-dissociable group-containing polysiloxane, alkali-insoluble or scarcely alkali-soluble but becoming alkali-soluble when the acid-dissociable group dissociates, on a film containing a polymer with a carbon content of 80 wt % or more and a polystyrene-reduced weight average molecular weight of 500&#x2013;100,000, an applying radiation to the coating is provided. The method can form minute patterns with a high aspect ratio by suitably selecting a specific etching gas in the dry etching process, without being affected by standing waves.

Pattern forming method and bilayer film

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Tokyo, Japan

Tsutomu Shimokawa