Tokyo Electron Limited

Tokyo Electron Yamanashi Limited

Tel Engineering Limited

Tsutomu Satoyoshi

Kenji Amano

Tutomu Hiroki

Kazuo Sasaki

Shoichi Abe

Kiyotaka Akiyama

Toshihiro Tojo

Yoshito Miyazaki

Hitoshi Saito

Hiromichi Ito

An inductively-coupled plasma processing apparatus for performing an inductively-coupled plasma processing on a rectangular substrate, includes: a processing container; a mounting table for mounting the substrate thereon; a rectangular metal window provided to be electrically insulated from the processing container while facing the mounting table; and an antenna unit for generating an inductively-coupled plasma inside the processing container. The metal window is divided into divided regions electrically insulated from each other by a first division extending in a radial direction toward each corner portion of the metal window. The antenna unit includes a first high-frequency antenna in which antenna segments having planar portions facing an upper surface of the metal window are arranged. Each antenna segment is configured by spirally winding an antenna wire in a vertical direction orthogonal to the upper surface of the rectangular metal window so that a winding axis is parallel to the upper surface.

Inductively-coupled plasma processing apparatus

There is disclosed an inductive coupling plasma processing apparatus having a processing chamber for subjecting a substrate G to a plasma processing, a dielectric wall portion constituting an upper part wall portion or a side wall portion of the chamber, a high-frequency antenna, disposed on a corresponding portion of the dielectric wall portion outside the chamber, for forming an induction field in the chamber, a cover member formed of a dielectric material disposed inside the dielectric wall portion to cover the dielectric wall portion, a heater for heating the cover member, and an insulating member for insulating between the dielectric wall portion and the heater, wherein a reaction product generated by a plasma is heated at a temperature without adhering to the cover member, and heat generated by the heater is prevented from being conducted to the dielectric wall portion.

Inductive coupling plasma processing apparatus

An inductively-coupled-plasma-processing apparatus includes a main vessel which is partitioned into an antenna chamber and a process chamber by a partition structure. The antenna chamber includes an RF antenna and the process chamber includes a susceptor on which an LCD glass substrate is placed. The partition structure has a dielectric panel constituted of four segments supported by a cross-shaped supporting bracket. The supporting bracket is suspended from the ceiling of the main vessel by a plurality of suspenders. The supporting bracket is used as a case of a showerhead for supplying a process gas into the process chamber.

Inductively-coupled-plasma-processing apparatus

An apparatus according to the present invention includes a cassette in which a plurality of substrates are stored, a contact guide member provided to face a side surface of the cassette, and pressing end surfaces of substrates stored in the cassette, an alignment device for moving the contact guide member to approach the cassette, and pressing the contact guide member against the end surfaces of the substrates in the cassette, thereby aligning the substrates all at one pressing time, and detectors, provided for the alignment device at positions corresponding to spaces of substrates held in the cassette, in the same or multiple number of the spaces for holding substrates, for detecting whether or not a substrate is present in each of the spaces for holding the substrates of the cassette.

Apparatus for detecting and aligning a substrate

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Nirasaki, Japan

Tsutomu Satoyoshi