Ricoh Company, Ltd.

Fujifilm Corporation

Nippon Steel Corporation

Mitsubishi Denki Kabushiki Kaisha

Research Laboratories of Australia Pty Ltd.

Canon Kabushiki Kaisha

Fujitsu Corporation

Nec Corporation

Nippon Micrometal Corporation

Nippon Steel & Sumikin Materials Co., Ltd.

Fuji Photo Film Company, Limited

Kikkoman Corporation

Tsutomu Sasaki

Masahiko Itaya

Tsuneo Kurotori

Mie Yoshino

Yukio Sakashita

Noriyasu Takeuchi

Yusuke Takeda

Tohru Nakano

Osamu Satoh

Masashi Ono

Atsuki Matsumura

Hiroki Kubozono

Tsutomu Teraoka

Yoshiyuki Tanaka

Hiroyuki Kobayashi

Hiroshi Kawamura

Makoto Obu

Masaki Kobayashi

Tadashi Okanishi

Masamoto Tanaka

Toshihiro Saito

Makoto Tanaka

Takayuki Kobayashi

Masayuki Suzuki

Takaaki Fukumoto

Tetsuro Hirota

Osamu Naruse

Tetsu Miyoshi

Masahiro Iezawa

Toshio Moro

Shinya Sugimoto

Yoshiharu Inoue

Kenji Mori

Koki Tanaka

Yoshihisa Ohta

Seigo Nakamura

Hiroyuki Nakagoshi

Tai Hasegawa

Isao Hamaguchi

Ikuo Itoh

Akihiko Imagi

Michio Umezawa

Fumihiko Mochizuki

Eisaku Takahashi

Shuzo Matsumoto

Wataru Uchida

Masaharu Hama

Masashi Ohnishi

Eiji Okamura

Mamoru Kikuchi

Hirofumi Suzuki

Atsushi Ikari

Yasushi Kawashima

Jun Yamakoshi

Kazuhide Ohba

Yuuichi Okamoto

Atsushi Satoh

Hideyuki Makita

Shigeru Minamino

Shoichi Matsuda

Norihiko Suzuki

Keisuke Kawamura

Yukihiko Iwai

Kazuto Kawakami

Chihiro Ono

Naoki Yagi

Isao Suda

Shoji Takagi

Shunichi Hayashi

Tsunehiro Shimizu

Shinta Moriya

Hiroharu Ishikawa

Katsuichi Kimura

Toshiaki Otsuka

Junji Seto

Takahiro Ono

Atsushi Takimoto

Tatsuya Gofuku

Hirokazu Ishizaki

Takashi Tokairin

Kenji Honma

Nobuyoshi Terada

Koichi Tohkairin

Kenji Endo

Taeko Murai

Masayoshi Fujishima

Yuzi Ganryu

Yoshinobu Nakashima

Kosuke Haraga

Kazumi Masuo

Hideaki Urata

Yosiro Komazawa

Isao Ikeda

Munenori Nakai

Asao Okuda

Akifumi Matsukawa

Takanao Matsudo

Masayuki Iwase

Masaru Saiki

An object of the present invention is to provide a semiconductor nanoparticle exhibiting excellent air durability, a semiconductor nanoparticle-containing dispersion liquid containing the semiconductor nanoparticle, and a film containing the semiconductor nanoparticle. In the semiconductor nanoparticle of the present invention, zinc, sulfur, and indium are detected by energy dispersive X-ray analysis, and a molar ratio Zn/In of zinc to indium which is acquired by the energy dispersive X-ray analysis satisfies Expression (1a).7&#x2264;Zn/In&#x2264;15&#x2003;&#x2003;(1a)

Semiconductor nanoparticle, semiconductor nanoparticle-containing dispersion liquid, and film

An object of the present invention is to provide a semiconductor nanoparticle-containing dispersion liquid having high initial luminous efficacy and exhibiting excellent moisture resistance; and a film produced using the dispersion liquid. The semiconductor nanoparticle-containing dispersion liquid of the present invention contains semiconductor nanoparticles from which zinc, sulfur, and indium are detected by X-ray photoelectron spectroscopy; and acrylate or methacrylate, in which a molar ratio of zinc to indium in the semiconductor nanoparticles which is acquired by the X-ray photoelectron spectroscopy satisfies Expression (1a).2.25&#x3c;Zn/In&#x3c;9&#x2003;&#x2003;(1a)

Semiconductor nanoparticle-containing dispersion liquid and film

An object of the present invention is to provide a semiconductor nanoparticle having high emission efficiency and excellent durability; a method of producing the same; and a dispersion liquid and a film obtained by using a semiconductor nanoparticle. The semiconductor nanoparticle of the present invention is a semiconductor nanoparticle in which oxygen, zinc, and sulfur are detected by X-ray photoelectron spectroscopy analysis and a peak (I) which is derived from a hydrocarbon group and present in a range of 2800 cmto 3000 cmand a peak (I) which is derived from COOand present in a range of 1400 cmto 1600 cmare detected by Fourier transform infrared spectroscopy analysis.

Semiconductor nanoparticle, dispersion liquid, film, and method of producing semiconductor nanoparticle

An object of the present invention is to provide a core shell particle having high luminous efficacy and a narrow emission half-width; a method of producing the same; and a film formed of the core shell particle. The core shell particle of the present invention includes: a core which contains a Group III element and a Group V element; a first shell which covers at least a part of a surface of the core; a second shell which covers at least a part of the first shell; and a coordination molecule in at least a part of an outermost surface, in which at least silicon is detected by X-ray photoelectron spectroscopy analysis, and a molar ratio of the silicon to the Group III element contained in the core, which is acquired by X-ray photoelectron spectroscopy analysis, is 3.1 or less.

Core shell particles, method for producing core shell particles, and film

An object of the present invention is to provide a core shell particle having high luminous efficacy and a narrow emission half-width; a method of producing the same; and a film formed of the core shell particle. The core shell particle of the present invention includes: a core which contains a Group III element and a Group V element; a first shell which covers at least a part of a surface of the core; a second shell which covers at least a part of the first shell; and a coordination molecule in at least a part of an outermost surface, in which at least oxygen is detected by X-ray photoelectron spectroscopy analysis, and a molar ratio of the oxygen to the Group III element contained in the core, which is acquired by X-ray photoelectron spectroscopy analysis, is 6.1 or less.

Core shell particle, method of producing core shell particle, and film

The present invention provides oxide particles having a compositional formula of Pb(ZrTi)O, wherein x is 0.46&#x2264;x&#x2264;0.6; wherein a size of the particle is from 0.5 to 10 &#x3bc;m; a porosity of a surface of the particle is 20% or less; and a shape of the particle is any one of a cube, a rectangular parallelepiped, or a truncated octahedron.

Oxide particles, piezoelectric element, and method for producing oxide particles

The image forming apparatus includes the fan motor that cools an FET, and a CPU that predicts temperature of the FET, and controls the rotation speed of the fan motor based on the predicted temperature of the FET, wherein the CPU determines the rotation speed of the fan motor at the start of image forming operation, based on predicated temperature of the FET of the time when the image forming operation starts.

Image forming apparatus

The image forming apparatus includes a fan motor that cools an FET, and a CPU that predicts temperature of the FET, and controls the rotation speed of the fan motor based on the predicted temperature of the FET. The CPU determines the rotation speed of the fan motor at the start of image forming operation based on predicated temperature of the FET at the time when the image forming operation starts.

An image forming apparatus prevents the problem of reduced utilization efficiency of a waste fluid tank caused by the storage of waste fluids with high and low viscosities in the same open-type waste fluid tank. The image forming apparatus includes a first waste fluid tank for storing waste ink fluid ejected from a recording head, and a second waste fluid tank for storing waste ink fluid ejected into a cap of the recording head. The waste ink fluid ejected into the cap is guided to the second waste fluid tank via a tube. The second waste fluid tank is an airtight structure having an inlet at one end to which the tube is detachably connected via a needle or a valve. At the other end of the second waste fluid tank, there is disposed an opening communicating the inside and the outside of the tank.

A polymer composite piezoelectric body is obtained by conducting polarization treatment on a composite having piezoelectric particles uniformly mixed by dispersion in a polymer matrix containing cyanoethylated polyvinyl alcohol.

Polymer composite piezoelectric body and manufacturing method for the same

Disclosed is a non-lead perovskite oxide having a low Curie temperature and high ferroelectricity represented by General Formula (P) given below.(Bi,Ba,X)(Fe,Ti,Mn)O&#x2003;&#x2003;(P) (where, Bi and Ba are A-site elements, X is one kind or a plurality of kinds of A-site elements, other than Pb and Ba, with an average ion valence of 2. Fe, Ti, and Mn are B-site elements. O is oxygen. 0&#x3c;x1+X2&#x3c;1.0, 0&#x3c;x3&#x3c;1.0, 0&#x3c;y1+y2&#x3c;1.0, 0&#x2266;y3&#x3c;1.0, 0&#x3c;x1, 0&#x3c;x2, 0&#x3c;y1, 0&#x3c;y2. The standard molar ratios among A-site elements, B-site elements, and oxygen are 1:1:3, but the molar ratios among them may deviate from the standard ratios within a range in which a perovskite structure may be formed.)

Perovskite oxide, oxide composition, oxide body, piezoelectric device, and liquid discharge apparatus

A perovskite oxide, which includes a first component represented by General Formula (P1) given below and a second component represented by General Formula (P2) given below.(Bi, X) (Fe, Mn)O&#x2003;&#x2003;(P1)(A, Y)BO&#x2003;&#x2003;(P2)(where, Bi is an A-site element and X is an A-site element with an average ion valence of not less than four. A is one kind or a plurality of kinds of A site elements other than Pb with an average ion valence of two, Y is a one kind or a plurality of kinds of A-site elements with an average valence of not less than three. Fe and Mn are B-site elements, and B is one kind or plurality of kinds of B-site elements with an average ion valence of four.) 0.6&#x2266;x1&#x3c;1.0, 0&#x2266;x2&#x2266;0.4, 0.65&#x2266;y1&#x3c;1.0, 0&#x2266;y2&#x2266;0.4, x2+y2&#x3e;0, 0.6&#x2266;z1&#x3c;1.0, 0&#x2266;z2&#x2266;0.4.

A lead-free solder alloy exhibiting good performance in impact resistance and vibration resistance. Also provided are a solder ball using such a lead-free solder alloy, and an electronic member having a solder bump using such a lead-free alloy. Specifically, the lead-free solder alloy consists of 1.0 to 2.0% by mass of Ag, 0.3 to 1.0% by mass of Cu, 0.005 to 0.1% by mass of Ni and the balance including Sn and unavoidable impurities. In an Sn&#x2014;Ag&#x2014;Cu based solder joint portion on a Cu electrode, a CuSn intermetallic compound layer is formed directly on the Cu electrode, and then a CuSnintermetallic compound layer is formed thereon. A Cu atomic site in the CuSnintermetallic compound layer is replaced by Ni having a smaller atomic radius than Cu to thereby reduce strain in the CuSnintermetallic compound layer, thus enabling impact resistance and vibration resistance to be improved therein.

Lead-free solder alloy, solder ball and electronic member, and lead-free solder alloy, solder ball and electronic member for automobile-mounted electronic member

To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250&#xb0; C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250&#xb0; C.

Solder alloy, solder ball and electronic member having solder bump

A process for producing a piezoelectric oxide having a composition (A, B, C)(D, E, F)O, where each of A, B, C, D, E, and F represents one or more metal elements. The composition is determined so as to satisfy the conditions (1), (2), (3), and (4),0.98&#x2266;()&#x2266;1.01,&#x2003;&#x2003;(1)()&#x3e;1.0,&#x2003;&#x2003;(2)()&#x3c;1.0, and&#x2003;&#x2003;(3)()&#x3c;()&#x3c;(),&#x2003;&#x2003;(4)where TF(P) is the tolerance factor of the perovskite oxide, and TF(ADO), TF(BEO), and TF(CFO) are respectively the tolerance factors of the compounds ADO, BEO, and CFO.

Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device

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Kanagawa, Japan

Tsutomu Sasaki