Screen Holdings Co., Ltd.

Tsutomu Osuka

Manabu Okutani

Ryo Muramoto

Sei Negoro

Naohiko Yoshihara

Keiji Iwata

Yasuhiko Nagai

Hiroshi Abe

Hitoshi Nakai

Masayuki Hayashi

Yasunori Kanematsu

Kenji Amahisa

Katsuei Higashi

In substrate processing, by supplying a first processing liquid onto an upper surfaceof a substrateheld in a horizontal state, a liquid filmof the first processing liquid which entirely covers the upper surfaceis formed. Further, by heating the substrate, a vapor layerof the first processing liquid is formed between the upper surfaceand the liquid filmof the first processing liquid on the upper surface. Then, by supplying a second processing liquid onto the upper surfaceof the substrate, the liquid filmof the first processing liquid is removed from the upper surface. It is thereby possible to appropriately remove extraneous mattersfrom the upper surfaceof the substrate, which are taken in the liquid filmof the first processing liquid as the vapor layeris formed.

Substrate processing method and substrate processing apparatus

A substrate processing method includes an intermediate processing step of processing the pattern forming surface by the intermediate processing liquid after a chemical liquid processing step, a filler discharging step of discharging a filler after the intermediate processing step, a filler spreading step of spreading the filler, a solidified film forming step of solidifying the filler, a lower position disposing step of making a blocking member be disposed at a lower position prior to start of the chemical liquid processing step, and a blocking member elevating step of starting elevation of the blocking member toward an upper position in a state where the pattern forming surface is covered with the intermediate processing liquid. The chemical liquid is discharged from a central nozzle. Spreading of the filler is started in a state where the blocking member is positioned at the upper position.

A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off the liquid remaining on the substrate, a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate, and a temperature decrease suppressing step of supplying, in parallel to the hydrogen peroxide water supplying step, pure water having high temperature to a lower surface of the substrate.

A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate.

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Kyoto, Japan

Tsutomu Osuka