Fujitsu Corporation

Pioneer Electronic Corporation

Fujitsu Hitachi Plasma Display Limited

Fujitsu Vlsi Limited

Tsutomu Ogawa

Masanori Kobayashi

Haruhisa Mori

Hiroshi Goto

Takashi Matsumoto

Yuji Furumura

Kunihiko Wada

Motoo Nakano

Hideki Harada

Kiyoshi Watanabe

Junji Sakurai

Hajime Kamioka

Yoshimi Shioya

Seiichiro Kawamura

Hiroshi Kaneta

Kazushi Nakashima

Ken Yamazaki

Yoshiko Okui

Yasushi Ohyama

Shin-ichi Inoue

A gas discharge panel having a plasma display panel includes a pair of substrates facing each other for forming a discharge space; an electrode formed on at least one the substrate; and a dielectric layer for covering the electrode; wherein the dielectric layer contains SiOas a main component and is composed of a material containing hydrogen of 5&#xd7;10atom/cmor less.

Gas discharge panel and its production method

In a switching power supply apparatus including an output transformer having a primary winding, a secondary winding and a feedback winding, a DC power source supplying DC voltage to the primary winding of the output transformer, an oscillation switching element having one terminal connected to the primary winding of the output transformer and a control terminal connected to the feedback winding, and a rectifying and smoothing circuit connected to the secondary winding of the output transformer, the switching power supply apparatus is characterized by further comprising a control circuit for flowing current through the secondary winding of the output transformer to one direction and a direction opposite thereto during a predetermined period after a time point where voltage is generated in the secondary winding of the output transformer.

Self-excited RCC type switching power supply apparatus

There is provided a stabilizing circuit for stabilizing the horizontal picuture size on the display of a television receiver, wherein a video signal containing a horizontal synchronizing signal having a horizontal scanning frequency is inputted. Said stabilizing circuit comprises: a horizontal output circuit for receiving a signal sychronizing with said synchronizing signal and corresponding to said horizontal scanning frequency, and for supplying a horizontal deflection current; a power source for supplying an electric power to the above horizontal output circuit; a control transistor connected between the power source and the horizontal output circuit; an output voltage generating circuit for generating an output voltage corresponding to an output pulse from the horizontal output transistor; a multiplier for multiplying the output from the control transistor with a predetermined multiple; an adder for adding together the output from the multiplier and the output from the output voltage generating circuit, thereby controlling the control transistor by virtue of the output from the adder.

Stabilizing circuit for stabilizing the horizontal picture size on the

In a apparatus made of silica such as a heating furnace, a wafer basket, stick or the like used for semiconductor device fabrication, a first silica layer on the side faced to a semiconductor wafer contains a large amount of the OH group, and a second silica layer on the opposed side contains a small amount of the OH group. With this structure, it is possible to reduce the amount of impurities released through the first silica layer, and to suppress the deformation of the apparatus by the second silica layer. Also, by holding a third silica layer between the first and second silica layers, it is possible to further reduce the amount of impurities released from the first silica layer.

Apparatus made of silica for semiconductor device fabrication

A method for fabricating a semiconductor device comprises the steps of cleaning a semiconductor substrate in a cleaning liquid essentially consisted of a mixture of an ammonia water having a composition of 29 percent by weight, a hydrogen peroxide aqueous solution having a composition of 31 percent by weight and a deionized water. The cleaning liquid contains the ammonia water and the hydrogen peroxide aqueous solution with respective volume parts such that the volume part of the ammonia is set equal to or smaller than 30 parts with respect to the deionized water of 1000 parts, the volume part of the ammonia water is set equal to or smaller than the volume part of the hydrogen peroxide aqueous solution, and the volume part of the hydrogen peroxide aqueous solution is set equal to or smaller than 100 parts with respect to the deionized water of 1000 parts. The volume part of the hydrogen peroxide aqueous solution is further set equal to or smaller than a boundary composition Y2 represented as

Method for fabricating a semiconductor device including a step for

A method for producing a semiconductor device including the steps of forming an insulating layer on a substrate, the insulating layer having a plurality of concave portions, forming a non-single crystalline silicon layer on the surface of the insulating layer. The non-single crystalline silicon is patterned so that each concave portion is independently melted and the patterned non-single crystalline silicon layer flows into each of the concave portions to form a single crystalline region by irradiation with an energy ray; and, a semiconductor element is also formed in the single crystalline region.

Forming selective single crystal regions in insulated pockets formed on

A method of producing a semiconductor device comprising the steps of: forming a window or contact hole in an insulating layer to expose a portion of a semiconductor substrate or a lower conductor line; forming semiconductor material (silicon) in the window; substituting the material with a metal (tungsten) by reaction of the semiconductor material with a metal compound (WF.sub.6 gas); and forming a conductor line over the metal within the window.

Method of producing a contact plug

A vacuum chuck apparatus operable in both gas and liquid includes a liquid-gas separating membrane which allows passage of gas molecules but prevents passage of liquid. The liquid-gas separating membrane is disposed between an inlet hole of the chuck and a manifold which is connected to a pneumatic system. The pneumatic system includes an aspirator, a compressor and a switching valve. The vacuum chuck is immersed into a liquid, compressed gas purges the liquid in the inlet hole, then the switching valve is switched to the aspirator. An object, such as a semiconductor wafer, is vacuumed quickly to the chuck, and the inlet hole is closed by the object. If a small quantity of liquid intrudes into the chuck, it is stopped by the liquid-gas separating membrane.

Vacuum chuck apparatus for wet processing wafers

A method for measuring lattice defects in semiconductor such as a silicon crystal, detects an ultrasonic velocity of an ultrasonic pulse propagating through the semiconductor to which heat is variably applied. An elastic constant of the semiconductor is calculated from the ultrasonic velocity, and a concentration or density of lattice defects of the semiconductor is obtained by converting the elastic constant.

Method for measuring lattice defects in semiconductor

A method for cutting an electrical conductive layer having a heat-absorbing film deposited thereon, by irradiating an energy beam on a portion of the electrical conductive layer intended to be cut. The energy beam is irradiated on the film, whereby the portion of the electrical conductive layer melts and alloys with the heat-absorbing film due to the energy absorbed and transferred by the heat-absorbing film.

Process for selective cutting of electrical conductive layer by

A semiconductor device in which an insulating layer having a window is formed on a semiconductor substrate, a semiconductor layer is formed on the insulating layer and a semiconductor element is formed on the semiconductor layer, has the advantages of high-speed operation and low power consumption. A conventional manufacturing method involves a high-temperature, time-consuming step by which the semiconductor layer for forming thereon the semiconductor element is formed so that it may have a proper impurity concentration. In the present invention, however, a portion of the semiconductor layer and a portion of the underlying substrate are rendered molten by annealing with an energy beam as of a laser, by which an impurity contained in the substrate is diffused into the semiconductor layer. Accordingly, no high-temperature, time-consuming step is involved in the present invention, permitting the production of a semiconductor device of excellent characteristics.

Selective epitaxy by beam energy and devices thereon

The invention is concerned with an improved method of producing a one-transistor cell for a dynamic RAM having a capacitor plate, a transfer gate and a shallow n.sup.+ -type region and a deeper p.sup.+ -type region for a junction capacitance. After formation of a thin oxide layer of a dielectric for an MOS capacitance, a patterned photo resist layer is formed. Using the photo resist layer as a mask, n-type impurities are doped into a semiconductor substrate. The capacitor plate and a masking layer are deposited on the photo resist layer and the thin oxide layer. P-type impurities are doped into the capacitor plate. Then, portions of the capacitor plate and masking layer on the photo resist layer are removed by removing the photo resist layer. An end portion of the capacitor plate is removed from under an edge of the remaining masking layer by etching. The p-type impurities are diffused into the silicon substrate by heating to form the deeper p.sup.+ -type region which does not extend beyond the n.sup.+ -type region.

Growing community of inventors

Kawasaki, Japan

Tsutomu Ogawa