Ulvac, Inc.

Other

Ulvac Co., Ltd

Tsutomu Nishihashi

Yuzo Sakurada

Kazuhiko Tonari

Seiji Ogata

Tsutomu Tanaka

Tadashi Morita

Kenji Sato

Takuya Uzumaki

Tsuyoshi Yoshimoto

Hirohiko Murakami

Kazuhiro Watanabe

Hidekazu Yokoo

Masaki Itou

Haruhisa Nakano

Takumi Komiya

Junki Fujiyama

Ryota Fukui

Masayuki Sekiguchi

A freeze vacuum drying apparatus includes: a spraying unit; a pipe unit; a heating unit; and a collection unit. The spraying unit sprays a raw material liquid into a vacuum chamber. The pipe unit has a non-linear shape, includes a first opening end and a second opening end, and traps frozen particles via the first opening end, the frozen particles being formed by self-freezing of liquid droplets formed by spraying the raw material liquid into the vacuum chamber. The heating unit heats the frozen particles in the pipe unit for sublimation drying, the frozen particles moving in the pipe unit from the first opening end toward the second opening end by kinetic energy produced during spraying. The collection unit collects dried particles that are formed by sublimation drying of the frozen particles in the pipe unit and released from the second opening end of the pipe unit.

Freeze vacuum drying apparatus and freeze vacuum drying method

An ion implanting apparatus is provided, which can accurately measure a quantity of atoms that are implanted. The ion implanting apparatus according to the present invention has an object to be measured, and the object to be measured is arranged in an irradiating range in which ions are irradiated. When atoms are implanted into an object to be processed by irradiating ions of a processing gas and neutralized particles thereof, the object to be measured is heated through the irradiation with the processing gas ions and the neutralized particles. A control unit determines a quantity of the atoms that are implanted into the object to be processed from the temperature of the object to be measured.

Ion implanting apparatus

A plasma doping method capable of introducing impurities into an object to be processed uniformly is supplied. Plasma of a diborane gas containing boron, which is a p-type impurity, and an argon gas, which is a rare gas, is generated, and no bias potential is applied to a silicon substrate. Thereby, the boron radicals in the plasma are deposited on the surface of the silicon substrate. After that, the supply of the diborane gas is stopped, and bias potential is applied to the silicon substrate. Thereby, the argon ions in the plasma are radiated onto the surface of the silicon substrate. The radiated argon ions collide with the boron radicals, and thereby boron radicals are introduced into the silicon substrate. The introduced boron radicals are activated by thermal processing, and thereby a p-type impurity diffusion layer is formed in the silicon substrate.

Plasma doping method and manufacturing method of semiconductor device

An ion implanter for manufacturing a single crystal film by extracting a hydrogen ion or a rare-gas ion from an ion source, selects a desired ion with a first sector electromagnet, scanning the ion with a scanner, collimates the ion with a second sector electromagnet, and implants it into a substrate; the ion source is configured to be located close to the entrance side focal point of the first sector electromagnet. In this case, when an aperture of an extraction section of the ion source is circular and entrance side focal points in a deflection surface and a surface perpendicular thereto in the first sector electromagnet are coincident, the ion beam after passing the first sector electromagnet becomes completely parallel in the two surfaces and the spot shape becomes a circle.

To provide an ion implantation device which suppresses diffusion of an ion beam, can finely control a scanning waveform and can obtain a large scanning angle of about 10&#xb0;. In the ion implantation device, first, second and third chambersA,A andA are arranged in predetermined places on a beam line, first and second gapsA andA intervene between the first chamberA and the second chamberA and between the second chamberA and the third chamberA, the second chamberA is electrically insulated from the first and third chambersA andA via first and second electrode pairsA andA attached to the first and second gapsA andA, respectively, the first and second electrode pairsA andA obliquely cross a standard axis J of the ion beam at a predetermined angle in opposite directions, and the second chamberis connected to a scanning power sourceA which applies an electric potential having desired scanning waveform.

Ion implantation device

In an ion implantation system including (a) an ion source (b) a mass analyzing portion, (c) an ion acceleration portion, (d) an ion beam focusing/deflecting portion, and (e) an end station chamber for implanting ions onto a semiconductor substrate. The ion source consists of plural ion sources being connected to the same mass analyzing portion in which any one of the plural ion sources is selected. Mass-separated ions from the ion source are led to the acceleration portion, and a stencil mask is arranged approximately to the semiconductor substrate in the end station chamber.

Ion implantation system and ion implantation method

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Susono, Japan

Tsutomu Nishihashi