Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Tsutomu Nagatsuka

Shusou Wadaka

Koichiro Misu

Mitsuhiro Koike

Tomonori Kimura

Kenji Yoshida

Yoshihito Hirano

Akira Yamada

Shuhei Yamamoto

Takayuki Yanagisawa

Shumpei Kameyama

Kenya Hashimoto

Masatsune Yamaguchi

Koji Ibata

Chisako Maeda

Kouji Murai

Tatsuya Ohmori

Eitaro Ishimura

Fusaoki Uchikawa

Tomohiro Akiyama

Toshiyuki Ando

Toshitaka Aoyagi

Yasuharu Koyata

Ryuji Ishii

Yosuke Akino

Toshihisa Honda

Masahito Sato

Shunpei Kameyama

An optical wavelength conversion element includes: a wavelength conversion waveguide that has a periodic polarization reversal structure having alternately and cyclically formed domains of which polarization directions are inverted, that guides light as a fundamental wave corresponding to the periodic polarization reversal structure, and performs a wavelength conversion of the guided fundamental wave; a first clad that is made of a dielectric having a refractive index lower than that of the wavelength conversion waveguide and is provided in contact with the domains; a second clad that is made of a dielectric having a refractive index lower than that of the wavelength conversion waveguide and is provided in contact with the domains such that the second clad is opposed to the first clad film; a first conducting unit that electrically connects the domains in parallel via the first clad; and a second conducting unit that electrically connects the domains in parallel via the second clad.

Optical wavelength conversion element, wavelength conversion laser device, and image display device

A wavelength converting element that is of a planar waveguide type, includes a plate-like nonlinear optical material, and performs a wavelength conversion on a fundamental wave of a laser beam by propagating the fundamental wave in a plurality of laser oscillation modes in a direction perpendicular to a main surface of the plate-like nonlinear optical material, the direction being perpendicular to an optical axis, wherein periods of polarization inversions of the nonlinear optical material are changed so that each of the periods has a width of a phase matching band A that includes phase matching conditions of at least two of the plurality of laser oscillation modes and so that a non-polarization-inversion region and a polarization inversion region are formed in the nonlinear optical material.

Wavelength converting element and wavelength converting laser apparatus

Provided is a photodiode array that is capable of outputting an electric signal with a large electric power and an optical microwave transmission system receiver that supplies an electric power with the aid of an optical fiber and does not require the electric power line from the external. An input modulation light is branched and input to a plurality of photodiode elements (), electric output terminals () of the plurality of photodiode elements () are connected in parallel to each other, and a combined electric output is extracted. The electric output terminal () of the photodiode array configured as described above is connected to an antenna () without an intermediation of an amplifier circuit.

Photodiode array configured to increase electrical output power and optical microwave transmission system receiver utilizing the same

The film acoustic wave devices (and) having the same properties are obtained by changing at least one of the followings: the length and/or the width of upper electrode (and); the distance between the upper electrodes (and); the length and/or the width of connecting patterns (and); areas of bonding pads (and); and the pattern shape for the film acoustic wave device (and) such as the area of capacitor electrode connected electrically to the bonding pads (and); the property variations of film acoustic wave devices (and) caused from the positioning at waferis compensated.

Film acoustic wave device, manufacturing method and circuit device

A film acoustic wave device having similar properties are obtained by changing at least one of the length and/or the width of upper electrodes; the distance between the upper electrodes; the length and/or the width of connecting patterns; the areas of bonding pads; and the pattern shape for the film acoustic wave device such as the area of capacitor electrodes electrically connected to the bonding pads. Property variations of the film acoustic wave devices caused from the positioning at a wafer is compensated for.

There is disclosed an acoustic wave apparatus, constructed in such a manner that a surface rotated in the range of 34&deg; to 41&deg; from a crystal Y axis around the crystal X axis of lithium tantalate is set as the surface of a substrate, a standardized electrode thickness (h/&lgr;) obtained by standardizing a thickness h of an electrode finger constituting at least a part of an interdigital transducer by a wavelength &lgr; of a surface acoustic wave is set to the range of 0.01 to 0.05, and a duty ratio (w/p) of the electrode finger decided based on a width w and an arraying cycle p of the electrode finger is set to the value ranging from 0.6 to just below 1.0.

Elastic wave device

There is provided a film bulk acoustic wave device comprising: a silicon substrate , a dielectric film including a silicon nitride formed on the substrate and a silicon oxide on the silicon nitride , a bottom electrode formed on the dielectric film , a piezoelectric film formed on the bottom electrode , and a top electrode formed on the piezoelectric film , wherein a via hole is formed in such a manner that the thickness direction of a part of the silicon substrate which is opposite to a region including a part where the top electrode exists is removed from the bottom surface of the silicon substrate to a boundary surface with the silicon nitride

Film bulk acoustic wave device

In an elastic wave device, an electrode, which is formed in a comb-like shape and is made of conductive material having a prescribed thickness, is arranged on a substrate of a piezo-electric element containing lithium niobate as a main component. Also, in this elastic wave device, a surface of the substrate is set to a plane which is obtained by rotating a plane perpendicular to a crystal Y-axis of the lithium niobate by an angle ranging from 55 degrees to 57 degrees around a crystal x-axis of the lithium niobate, and a duty ratio (a width w of an electrode finger/an arrangement interval p of a pair of electrode fingers) of each of a plurality of electrode fingers composing the electrode is equal to or higher than 0.4 and is lower than 1.0.

Thin film piezoelectric element

A detecting device for detecting a physical quantity of an object, which includes a transmission signals generating device for generating first and second transmission signals of different frequencies, an ultrasonic wave transmission device that is excited by the first and the second transmission signal, for transmitting ultrasonic pulses corresponding to the first and the second transmission signal to an object, and a signal processing device for carrying out a signal processing process on the first and the second echo. The signal processing process is such that it detects phases of the first and second echo corresponding to the first and second transmission signal, which are received by the ultrasonic wave receiving device. An indeterminacy integer times as large as 2.pi. of the phase of each of the first and second echo is determined on the basis of the information of the amplitudes of the first or the second echo, and a distance from the ultrasonic wave transmission device through an object to the ultrasonic wave receiving device along an ultrasonic wave propagating path is detected on the basis of the determined phase of the first or second echo.

Apparatus and method for detecting a measurable quantity of an object

Embodiments of the present invention provide a small and well-characterized bulk acoustic wave device by fabricating a filter having a wide band width or a resonator having a wide oscillation frequency range together with a semiconductor circuit. In embodiments of the present invention, a bulk acoustic wave device comprises a semiconductor substrate having a dielectric substance layer thereon, the dielectric substance layer has a ground conductor layer thereon, the ground conductor layer has a piezoelectric ceramic thin film thereon and the piezoelectric ceramic thin film has a conductive electrode pattern thereon. The thickness of the piezoelectric ceramic thin film is more than ten times the thickness of the ground conductor layer, and the wave number of acoustic waves that propagate in a direction parallel to a surface of the piezoelectric ceramic thin film multiplied by the thickness of the piezoelectric ceramic thin film is less than 2.

An ultrasonic detecting apparatus which includes a sequence generating means and a transmission signal generating means for generating a transmission signal corresponding to the sequence. The detecting apparatus also includes a transmitting means to transmit waves, which may be ultrasonic waves, to an object and a receiving means for receiving an echo corresponding to the transmission signal. A correlation operation means performs a correlation operation with respect to the echo. In another general aspect, the sequence generating means may generate more than one sequence, some of whose auto-correlation functions produce substantially zero sidelobe in the summed result. In a further general aspect, the sequence generating means generates two or more sequences, with each of the sequences being different from the others and having substantially the same auto-correlation function as the others.

Echo based detecting apparatus employing signal generator and correlator

An ultrasonic detecting apparatus which includes a generator which generates more than three transmission signals. The detecting apparatus also includes a transmitter/receiver which transmits waves, which may be ultrasonic waves, to an object and receives echoes corresponding to the transmission signal. A correlator performs correlation operations with respect to the echoes. The results of the correlation operations are processed to obtain a signal with substantially zero side lobes.

Apparatus and method for detecting flaws in and inspecting an object

An inspection apparatus utilizing a pulse compression technique is described which comprises a signal generator, a transmission/reception probe; first and second correlators and an adder. The signal generator generates a composite transmission signal consisting of signals Sap(t), Saq(t), Sbp(t) and Sbq(t) respectively based on a basic unit signal ga(t) and a sequence {p}, the signal ga(t) and a sequence {q}, a basic unit signal gb(t) and the sequence {p}, and the signal gb(t) and the sequence {q}, to the probe to transmit the composite transmission signal to a target. The first correlator performs a correlation operation of echo signals Rap(t), Raq(t), Rbp(t) and Rbq(t) corresponding to the signal Sap(t), Saq(t) and Sbq(t) by utilizing reference signals Ua(t) and Ub(t) based on the sequences to provide results Caap(t), Caaq(t), Cbbp(t) and Cbbq(t). The second correlator performs a correlation operation of the results Caap(t), Caaq(t) Cbbp(t) and Cbbq(t) by utilizing the sequences {p} and {q} to provide compressed pulses Caapp(t), Caaqq(t), Cbbpp(t) and Cbbqq(t). These pulses are summed up at the adder to provide a composite compressed pulse C having the large amplitude main lobe and small amplitude side lobes.

Inspection apparatus

An ultrasonic non-destructive inspecting apparatus is constructed to comprise a transmission signal generator, an ultrasonic probe, a correlator and an adder wherein a transmission signal based on a sequence is generated and transmitted to a specimen, its echo is correlation processed with an appropriate reference signal, and the results of the correlation processes are summed to judge a reflection matter within the specimen.

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Tokyo, Japan

Tsutomu Nagatsuka