Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Texas Instruments Japan Limited

Kti Semiconductor Ltd.

Tsutomu Morimoto

Eiji Takahashi

Naokazu Sakoda

Hiroyuki Takamatsu

Masato Kannaka

Shingo Sumie

Koji Inoue

Kenichi Inoue

Hiroshi Hashimoto

Shiro Horiguchi

Yasuhiro Matsushita

Toshikatsu Nonaka

Naoyuki Yoshida

Akira Okamoto

Shouji Kanbe

Yuichiro Gotoh

A core member () of the disclosed reactor (Da) comprises a magnetic wire material and is arranged outside a plurality of coils (). As the core member () in the reactor (Da) having this structure is a wire material and is arranged outside the plurality of coils (), the core member () can be formed by the winding of the wire material, simplifying manufacturing.

Reactor

A tire shape measuring system measures a surface shape on the basis of an image of a line of light (a light section line) emitted to a surface of a relatively rotating tire using a light-section method. The shape measuring system includes a light projector for emitting a plurality of lines of light onto a tire surface in directions different from a direction in which the height of the surface is detected so as to form a plurality of separate light section lines and a camera for capturing images of the light section lines in directions in which chief rays of the lines of light are specularly reflected by the tire surface. The shape measuring system individually detects the coordinates of the light section lines from images of pre-defined independent image processing target areas for each captured image and calculates the distribution of the surface height using the detected coordinates.

Tire shape measuring system

A tire shape detecting apparatus includes a projector that applies a plurality line light beams in a continuously joined manner, from a direction different from the detection height direction (Z-axis direction) in one light section line, or that applies one line light beam in a condensed manner in the line length direction thereof in order that the one light section line may be formed on the one line Ls on the surface of the tire; and a camera for picking up images of the plurality of line light beams applied to the tire surface in the direction in which the principal ray of each of the plurality of line light beams performs specular reflection with respect to the tire surface, or in the direction in which the principal ray of the condensed one line light beam performs specular reflection with respect to the tire surface.

Apparatus and method for detecting tire shape

A shape measuring apparatus and a shape measuring method suited for measuring an edge profile of a thin sample such as a semiconductor wafer or the like is provided. A distribution of surface angle and an edge profile of a measurement site is calculated by emitting light at sequentially different angle to the measurement site of a wafer by sequentially switching and lighting a plurality of LEDs each disposed at one of plurality of positions in one plane by an LED driving circuit, obtaining an image data showing a luminance distribution of the reflected light form the measurement site through a camera by a calculator each time light is emitted and, estimating an emitting angle of the light when the luminance of the reflected light becomes peak based on image data and emitting angle of the light corresponding to each LED by the calculator.

Apparatus and method for measuring shape

A liquid sample is irradiated with excitation light and measurement light, and a measurement position at which a traveling path of the measurement light passes through an excitation section of the excitation light in the sample is changed while the sample is being irradiated with the excitation light and the measurement light. Then, the phase change of the measurement light is measured for each measurement by optical interferometry on the basis of the measurement light after the measurement light passes through the sample. The measurement position is changed by, for example, scanning the excitation light, moving the sample, moving a lens that collects the excitation light in the sample so as to change the light-collecting position (focal position) in the sample, etc.

Photothermal conversion measurement apparatus, photothermal conversion measurement method, and sample cell

A surface image of a semiconductor wafer having a defect is picked up as a inspection image while a surface image of a semiconductor wafer having no defect is stored in an image memory as a reference image. A density difference image between the inspection image and the reference image. By extracting the defect in wiring and non-wiring regions from the density difference image, extract images are obtained. Two luminance information for wiring and non-wiring regions are obtained from extract images. Based on the luminance information, the type of the defect is determined and a production process where the defect has occurred is detect.

Method and apparatus for classifying a defect on a semiconductor wafer

A sample evaluation method based on the measurement of photothermal displacement in which two exciting light beams and two measuring light beams are produced by a laser source, the exciting beams are rendered intensity modulation in opposite phase relationship by an acoustic-optic modulator and illuminated to different positions of a sample, the measuring beams are provided with different oscillation frequencies by acoustic-optic modulators and illuminated to the irradiation positions of the exciting beams correspondingly, the reflected lights of measuring beams from the sample are merged so as to interfere with each other, and the sample is evaluated based on the phase of the interference light. The method is capable of measuring the photothermal displacement accurately and stably without implementing intricate signal processings.

Method of sample valuation based on the measurement of photothermal

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Kobe, Japan

Tsutomu Morimoto