Fujitsu Corporation

Fujitsu Media Devices Limited

Taiyo Yuden Co., Ltd.

Other

Ube Industries, Inc.

Tsutomu Miyashita

Yoshio Satoh

Tokihiro Nishihara

Takeshi Sakashita

Tsuyoshi Yokoyama

Takashi Matsuda

Osamu Ikata

Tadashi Nakatani

Mitsuo Takamatsu

Masafumi Iwaki

Hiroshi Ishikawa

Hiroshi Horiuchi

Makoto Ohashi

Kazunari Komenou

Masami Tsutsumi

Masanori Ueda

Shinji Taniguchi

Kazunori Inoue

Kazuhiro Matsumoto

Isao Watanabe

Kazuo Matsuda

Jun Tsutsumi

Kentaro Nakamura

Hiroshi Tanaka

Yu Yonezawa

Noboru Wakatsuki

Tamotsu Yamamoto

Masaaki Ono

Toshio Hanazawa

Hiroshi Tokunaga

Fumiya Matsukura

Atsushi Machida

Rei Kimachi

Naoki Takahashi

Keiichi Betsui

Takeaki Shimanouchi

Masahiko Imai

Sumio Yamada

Arata Ejiri

Suguru Warashina

Tsuguto Maruyama

Masaki Yoshio

Kensuke Yoshida

Hideya Yoshitake

Kenji Nagata

Hisanori Aizawa

Yoshio Sato

An acoustic wave device fabrication method includes: forming on a piezoelectric substrate a comb-shaped electrode and a wiring layer coupled to the comb-shaped electrode; forming on the piezoelectric substrate a first dielectric film having a film thickness greater than those of the comb-shaped electrode and the wiring layer, covering the comb-shaped electrode and the wiring layer, and being made of silicon oxide doped with an element or undoped silicon oxide; forming on the first dielectric film a second dielectric film having an aperture above the wiring layer; removing the first dielectric film exposed by the aperture of the second dielectric film by wet etching using an etching liquid causing an etching rate of the second dielectric film to be less than that of the first dielectric film so that the first dielectric film is left so as to cover an end face of the wiring layer and the comb-shaped electrode.

Method of fabricating acoustic wave device

An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode that is located on the piezoelectric substrate and excites an acoustic wave; and a silicon oxide film that is located on the piezoelectric substrate so as to cover the comb-shaped electrode, and has a total concentration of carbon (C), hydrogen (H), nitrogen (N), and fluorine (F) equal to or less than 3.5 atomic %.

Acoustic wave device and method of fabricating the same

An electronic component includes: a substrate; a functional portion provided on the substrate; an interconnection line provided on the substrate and electrically connected to the functional portion; a metal wall provided on the substrate so as to surround the functional portion and the interconnection line; and a seal portion that contacts the metal wall and covers the functional portion and the interconnection line so as to define a cavity above the functional portion, the seal portion being made of liquid crystal polymer.

Electronic component, electronic device, and method for manufacturing the electronic component

An electronic component includes: an element that is located on a substrate; a signal wiring that is located on the substrate and electrically connected to the element; a metal plate that is located so as to form a cavity on a functional part of the element and covers an upper surface of the cavity; a support post that is located on the substrate so as not to be located on the signal wiring, and supports the metal plate; and an insulating portion that covers the metal plate and the support post, and contacts a side surface of the cavity.

Electronic component with metal plate above element and fabrication method of the same, and electronic device including the same

A method for manufacturing an acoustic wave device includes: adhering wafer-shaped first and second piezoelectric substrates to a front face of a first and second adhesive sheet respectively and dividing the first and the second piezoelectric substrates into rectangles; adhering a third and fourth adhesive sheet to the first and second piezoelectric substrates respectively and moving at least one divided portions of the first and second piezoelectric substrates selectively to the third and fourth adhesive sheet respectively; moving the first piezoelectric substrate on the first adhesive sheet to the fourth adhesive sheet; and moving the second piezoelectric substrate on the second adhesive sheet to the third adhesive sheet.

Method for manufacturing acoustic wave device

A piezoelectric thin-film resonator includes a substrate, a lower electrode arranged on the substrate, a piezoelectric film arranged on the lower electrode, and an upper electrode arranged on the piezoelectric film. A region in which the upper electrode overlaps with the lower electrode through the piezoelectric film has an elliptical shape, and a condition such that 1&#x3c;a/b&#x3c;1.9 is satisfied where a is a main axis of the elliptical shape, and b is a sub axis thereof.

Piezoelectric thin-film resonator and filter using the same

A duplexer includes: first and second filters including film bulk acoustic resonators (FBARs) arranged in a ladder form; first and second integrated-passive devices (IPDs) provided between a common terminal and the first and second filters; and a substrate on which the first and second filters and the first and second IPDs are mounted. The substrate includes conductive patterns that realize inductances connected between the first and second filters and ground. The first and second IPDs includes inductors connected to the first and second filters.

Duplexer with filters including film bulk acoustic resonators

A resonator includes a piezoelectric thin-film provided on a main surface of a substrate, a first electrode film provided on a first surface of the piezoelectric thin-film, a second electrode film provided on a second surface of the piezoelectric thin-film, a frequency adjustment film provided on one of the first and second electrode films, the frequency adjustment film comprising a film laminate including a first adjustment film provided on said one of the first and second electrode films, and a second adjustment film provided on the first adjustment film. The first adjustment film is used for &#x394;f adjustment, and the second adjustment film is used for correcting frequency deviations generated in the filter manufacturing process. Thus, it is possible to accurately control the center frequency of the filter in which the multiple resonators are connected.

Resonator, filter and fabrication of resonator

The present invention provides the stress detection method for force sensor device with multiple axis sensor device and force sensor device employing this method, whose installation angle is arbitrary. The stress detection method includes, first and second force sensors whose detection axes are orthogonal to each other. When the detection axis of first force sensor forms angle &#x3b8; with direction of detected stress Ax, and the stress component of direction perpendicular to direction of the detected stress Ax is Az, output Apx of the axis direction of first force sensor is found as Apx=&#x3b1;(Ax&#xd7;cos &#x3b8;+Az&#xd7;sin &#x3b8;), and output Apz of the axis direction of the second force sensor is found as Apz=&#x3b1;(Ax&#xd7;sin &#x3b8;+Az&#xd7;cos &#x3b8;), and, when &#x3b1;and &#x3b1;are detection sensitivity coefficients of first and second force sensors respectively, the detection sensitivity coefficient &#x3b1;of second force sensor is set as &#x3b1;=&#x3b1;tan &#x3b8;, and the detected stress Ax is found as Ax=(Apx&#x2212;Apz)/&#x3b1;(cos &#x3b8;&#x2212;tan &#x3b8;&#xd7;sin &#x3b8;).

Stress detection method for force sensor device with multiple axis sensor and force sensor device employing this method

A piezoelectric thin-film resonator includes a device substrate and a laminated body provided on the device substrate and composed of a lower electrode, an upper electrode and a piezoelectric film sandwiched between the lower and upper electrodes. The laminated body has a membrane portion in which the upper and lower electrodes overlap with each other through the piezoelectric film, and a gap has a dome shape being formed between the device substrate and the lower electrode and located below the membrane portion.

Piezoelectric thin-film resonator and filter and fabricating method

An acceleration sensor that suppresses fluctuations in the offset voltage and with an enhanced temperature characteristic is provided. The acceleration sensor comprises an weight that is formed in the center of a semiconductor substrate; a frame that is formed at the circumference of the weight; a beam or diaphragm that connects the weight and frame; a detection element that is formed on the beam or diaphragm and which detects bending of the beam or diaphragm that corresponds with the applied acceleration; and a lead that is formed on the beam or diaphragm and which guides the detection output of the detection element to a pad that is provided on the frame, wherein a dummy lead comprising a plurality of dot patterns which are at least electrically independent of the lead formed on the beam or diaphragm is formed on the beam or diaphragm.

Acceleration sensor

A film bulk acoustic resonator includes: a piezoelectric thin film that is formed on a principal surface of a substrate; and a lower electrode and an upper electrode that are arranged to sandwich the piezoelectric thin film. In this film bulk acoustic resonator, the piezoelectric thin film is made of aluminum nitride, and at least one of the lower electrode and the upper electrode contains a ruthenium or ruthenium-alloy layer.

Film bulk acoustic resonator and method of producing the same

A SAW filter includes a first SAW resonator having a pair of terminals and a predetermined resonance frequency (f), the first SAW resonator being provided in a parallel arm of the SAW filter. A second SAW resonator has a pair of terminals and a predetermined resonance frequency (f) approximately equal to a predetermined antiresonance frequency of the first SAW resonator (f). The second SAW resonator is provided in a series arm of the SAW filter. An inductance element is connected in series to the first SAW resonator.

Surface acoustic wave filter

Stress detection method for sensor device with multiple axis sensor and sensor device employing this method

A method is provided for making a micro-switching element. The switching element includes a substrate, two supporting members fixed to the substrate, and a movable beam bridging between the supporting members. The beam includes a membrane, a movable contact electrode and a movable driving electrode, both disposed on the membrane. The switching element also includes a pair of stationary contact electrodes facing the movable contact electrode, and a stationary driving electrode cooperating with the movable driving electrode for generation of electrostatic force. The method includes the steps of making a sacrifice layer on the substrate, making the membrane on the sacrifice layer, and subjecting the sacrifice layer to etching with the membrane intervening, so that the supporting members are formed as remaining portions of the sacrifice layer between the substrate and the membrane.

Micro-switching element fabrication method and micro-switching element

Growing community of inventors

Kawasaki, Japan

Tsutomu Miyashita