Kumamoto University

Kuraray Co., Ltd.

Toshiba Tungaloy Co., Ltd.

Other

Sumitomo Special Metals Co., Ltd.

Maruwa Electronic Inc.

National University Corporation Kumamoto University

Tsutomu Mashimo

Hideharu Iwasaki

Makoto Okamoto

Hisashi Yamasaki

Susumu Yamaya

Masao Ono

Minoru Nishida

Koji Shibasaki

Masanori Sueyoshi

Xinsheng Huang

Omurzak Uulu Emil

Satoshi Hirosawa

Ken Makita

Yoshiaki Yasuda

Takashi Ikegami

Hiroshi Yasuoka

Satoru Okayasu

Toyotaka Osakabe

Akira Tezuka

Yusuke Iguchi

Naoto Kameyama

Sulaimankulova Saadat

Uulu Omurzak Emil

The object of the present invention is to provide a method of producing low valence titanium oxides in a steady supply manner acceptable in industrial production. The low valence titanium oxides are produced by electrical discharge between two electrodes in an aqueous medium, wherein at least one of the electrodes is a titanium-containing electrode.

Low valence titanium oxides and method of producing the same

A method of producing a Group II-VI compound semiconductor. The method involves generating a pulsed electrical discharge plasma between metallic electrodes in sulfur to produce a Group II-VI compound semiconductor. A method of producing a Group II-VI compound semiconductor phosphor using a pulsed electrical discharge plasma. A hexagonal crystal of Group II-VI compound semiconductor composed of a plurality of twin crystals.

Method of producing group II-VI compound semiconductor, method of producing group II-VI compound semiconductor phosphor, and hexagonal group II-VI compound semiconductor

A method for separating and enriching isotopes in an efficient and low-cost manner from a condensation-system (liquid or/and solid) material including two or more different isotopes by taking advantage of the sedimentation of atoms through an acceleration field by ultra-high speed rotation. The condensation-system material is placed in a sedimentation tank which is then housed in a supercentrifuge. The supercentrifuge in its rotor is rotation driven by an ultra-high speed rotation power source, and an acceleration field of energy of 100000 G to 1500000 G, i.e., about 100 to 800 m/s in terms of peripheral velocity, is applied to the above condensed (liquid or/and solid) material under such a temperature that is specified by an isotope material to be enriched. In this case, a difference in centrifugal force applied is provided between the isotopes in the condensed (liquid or/and solid) material comprising the at least two isotopes. By virtue of sedimentation by taking advantage of this difference, isotope atoms within the condensed material interact, and, consequently, separation and enrichment of the isotopes can be realized in a higher efficiency than the case where gas is used, by conducting the separation and enrichment of the isotopes within the liquid material, using an effective material, and using a multistaged rotor system.

Method for separating and enriching isotope material, multistage rotor, and apparatus for separating and enriching isotope material

An object of the present invention is to achieve more high-speed rotation of a rotor to which a test object is stored, extending the duration of high-speed rotation, and temperature control of a rotor at the time of high-speed rotation. A high-speed rotation testing apparatus of the present invention comprises: a rotor having a hollow for a test object, to which a predetermined test object is stored; a spindle connected to the rotor; a torque applying device for applying a predetermined torque to the spindle, and a casing for sealing the rotor. The casing comprises a decompressing device and a holder for holding the spindle. The holder has a bushing for supporting the spindle and a bushing supporting member for supporting the bushing by inserting thereto. By forming the inner diameter of at least one of the bushing supporting member larger than the outer diameter of the bushing, the bushing supporting member supports the bushing to be rotatable.

High-speed rotation testing apparatus

A densified high performance rare earth-iron-nitrogen permanent magnet obtained from a powder of a Th.sub.2 Zn.sub.17 compound containing nitrogen at interlattice sites, without using autogeneous sintering and yet preventing decomposition and/or denitrification from occurring. The process for producing the same need not necessarily use a binder, and it comprises compaction molding, or charging while applying a magnetic field, a powder of a nitrogen intrusion T--R--N compound having a specified composition and a Th.sub.2 Zn.sub.17 crystal structure, and applying thereto shock compression at a drive pressure of from 10 to 25 GPa as reduced to an equivalent drive pressure in an iron capsule.

Rare earth-iron-nitrogen system permanent magnet and process for

The object of the present invention is to provide a stoichiometric B1-type tantalum nitride and a sintered body thereof. A B1-type tantalum nitride and a sintered body thereof, wherein a stoichiometric B1-type tantalum nitride is produced typically according to the method of impact compression, having the properties (a) that the X ray diffraction substantially shows a pattern ascribed to the stoichiometric B1-type tantalum nitride alone but not others, (b) that the measured value of the lattice spacing D (h, k, l) has a deviation of 0.00013 nm or less from the corresponding value calculated based on the B1 structure, (c) that the lattice constant is 0.4335.about.0.4338 nm, (d) that the electron diffraction image substantially shows the spots particular to the stoichiometric B1-type tantalum nitride alone but not others and (e) the value of Z in TaN.sub.z is within a range of 0.96-1.01.

Stoichiometric B1-type tantalum nitride and a sintered body thereof and

The object of the present invention is to provide a stoichiometric B1-type tantalum nitride and a sintered body thereof. A B1-type tantalum nitride and a sintered body thereof, wherein a stoichiometric B1-type tantalum nitride is produced typically according to the method of impact compression, having the properties (a) that the X-ray diffraction substantially shows a pattern ascribed to the stoichiometric B1-type tantalum nitride alone but not others, (b) that the measured value of the lattice spacing D (h, k, l) has a deviation of 0.00013 nm or less from the corresponding value calculated based on the B1 structure, (c) that the lattice constant is 0.4335.about.0.4338 nm, (d) that the electron diffraction image substantially shows the spots particular to the stoichiometric B1-type tantalum nitride alone but not others and (e) the value of Z in TaN.sub.z is within a range of 0.96-1.01.

Growing community of inventors

Kumamoto, Japan

Tsutomu Mashimo