Rockwell International Corporation

Tsutomu Kobayashi

Peter K George

Isoris S Gergis

Michael T Elliott

John P Reekstin, Jr

Robert F Bailey

John L Archer

Thomas R Oeffinger

A method of fabricating a microelectronic circuit device on a substrate by forming a layer of electrically and thermally conductive material (13) on a surface of a substrate (10). Channels are then etched in the layer of conductive material (13) to form patterns of the conductive material which are delineated from the remainder of the layer of conductive material. The channels are filled with an electrically insulating material (21, 22, 23) so as to form a substantially planar surface layer on the substrate. Finally, a microelectronic circuit device (e.g., 25) is formed on the substantially planar surface.

Method of fabrication of bubble domain device structures

The invention is directed to continuous (gapless) propagation structures for use with magnetic bubble domain devices. The gapless structures are arranged so that magnetic bubbles will propagate therealong without a significant change in size or diameter of the bubble. In addition, the structures are configured so that the bubbles will propagate in a preferred direction without ambiguity.

Continuous propagation structures

There is provided a self-biased structure which permits magnetic bubble domain device operation. The invention consists of three layers of material with a bias layer sandwiched between two bubble layers.

Self-biased structure for magnetic bubble domain devices

There is provided a switch which is useful in magnetic bubble domain devices. The switch can be used to replicate, transfer or annihilate any bubble domains in a magnetic bubble domain system. The switch comprises a 'BOOMERANG' shaped element which is disposed adjacent to two juxtaposed magnetic bubble domain propagation paths. A re-entrant current path conductor is integrally connected to the boomerang shaped element and associated with at least one of the propagation paths whereby magnetic bubble domains can be stretched, cut, annihilated or the like in response to a control current signal. Optional bar shaped elements are associated with various components of the switch in order to improve the operating characteristics of the switch.

One level switch for magnetic bubble domain devices

There is provided a switch which is useful in magnetic bubble domain devices. This switch can be used to replicate, transfer or annihilate bubble domains in a magnetic bubble domain memory system. The switch comprises a half-disk (or pick-axe) shaped element which is disposed adjacent to two juxtaposed magnetic bubble domain propagation paths. A re-entrant current path conductor is integrally connected to the half-disk element and associated with at least one of the propagation paths whereby magnetic bubble domains can be stretched, cut, annihilated or the like in response to a control current signal. Optional bar elements are associated with the half disk elements of the switch to improve the operating characteristics thereof.

One-level switch for magnetic bubble domain devices

There is disclosed an improved circuit element or structure for use in propagation of magnetic bubble domains. The improved circuit element permits a more desirable gap-to-period ratio than conventional element patterns. The improved circuit element provides portions thereof which are substantially parallel to similar portions of adjacent, similar circuit elements. As a consequence, the magnetic poles developed in the adjacent circuit elements by the application of the in-plane magnetic field are substantially identical at a given time thus facilitating interelement transfer. The circuit element structures are arranged in various propagation paths and operational components. Propagation paths and inter-propagation path elements are described.

Gap tolerant bubble domain propagation circuits

A passive replicator comprising a plurality of elongated bars interposed between an input propagation path and a plurality of output propagation paths.

Passive replicator

In an improved bubble lattice file (BLF) structure, two adjacent layers of magnetic bubble domain material are utilized to provide separate media for supporting carrier bubbles or coded bubbles. The coded bubbles, in one layer, represent data stored in the bubble lattice file. The carrier bubbles, in another layer, are magnetically coupled to the coded bubbles and are used in manipulation thereof. The magnetic bubble domain layers may be separated by an appropriate interface layer or surface. The lattice file area, or storage area, is biased by a single layer of bias material while adjacent areas, such as an input/output region, include a pair of biasing layers disposed on opposite sides of the adjacent layer structure. This composite permits an improved bubble lattice file structure which utilizes the storage capabilities of bubble lattice file memories as well as the operating capabilities of so-called conventional magnetic bubble domain device techniques.

Growing community of inventors

Placentia, CA, United States of America

Tsutomu Kobayashi