Hitachi-Kokusai Electric Inc.

Tsutomu Kato

Yuji Takebayashi

Satoshi Okada

Hirohisa Yamazaki

Masanori Sakai

Tetsuo Yamamoto

Tatsuyuki Saito

Shinya Sasaki

Shintaro Kogura

Atsuhiko Ashitani

There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

Method for processing substrate and substrate processing apparatus

A method of manufacturing a semiconductor device includes processing a substrate accommodated in a process container accommodated in a housing by supplying a process gas onto the substrate; and exhausting the process container using an exhaust system comprising a first exhaust pipe connected to the process container, the first exhaust pipe having circular or oval cross-section perpendicular to an exhausting direction thereof; and a second exhaust pipe connected to the first exhaust pipe, the second exhaust pipe having square or rectangular cross-section perpendicular to the exhausting direction, wherein at least a portion of the second exhaust pipe is disposed within the housing.

Method of manufacturing semiconductor device

Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. A method of manufacturing a semiconductor device, including: loading a substrate holder into an inner tube, the substrate holder holding a plurality of substrates in a state where the plurality of substrates are horizontally oriented and stacked; forming thin films on the plurality of substrates by supplying a source gas to an inside of the inner tube; and unloading the substrate holder from the inner tube, wherein the forming the thin films is performed in a state where a conductance of a space between an inner wall of the inner tube and a gas penetration preventing cylinder is smaller than a conductance of a region where the plurality of substrates are stacked.

Substrate processing apparatus and method of manufacturing semiconductor device

A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.

Substrate processing apparatus and method for manufacturing semiconductor device

Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. A substrate processing apparatus including: a substrate holder including a substrate stacking part configured to hold a plurality of vertically stacked substrates and a cylinder part disposed under the substrate stacking part to enclose a lower portion of the substrate holder; an inner tube configured to accommodate the substrate holder wherein a space between the cylinder part and a lower portion of the inner tube is smaller than a space between the substrate stacking part and an upper portion of the inner tube; an outer tube configured to enclose the inner tube with a gap therebetween; a gas nozzle installed in the inner tube; a gas injection hole disposed in the gas nozzle; a source gas supply unit configured to supply a source gas to an inside of the inner tube through the gas nozzle; a gas exhaust outlet disposed in a sidewall of the inner tube such that the inside of the inner tube communicates with the gap through the plurality of gas exhaust outlets; an exhaust unit configured to exhaust the gap so as to create a gas stream inside the inner tube in a direction from the gas injection hole to the plurality of gas exhaust outlets.

The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.

Growing community of inventors

Takaoka, Japan

Tsutomu Kato