Sony Semiconductor Solutions Corporation

Sony Corporation

Tsutomu Imoto

Toshiyuki Nishihara

Masao Matsumura

Takuya Maruyama

Tomohiro Takahashi

Ryota Watanabe

Takuro Murase

Yuji Isogai

Keiji Mabuchi

Toshifumi Wakano

Toshio Kobayashi

Atsumi Niwa

Atsushi Suzuki

Yusuke Otake

Takeshi Yamazaki

Yorito Sakano

Frederick T Brady

Yusuke Ikeda

Yuji Suzuki

Kenichi Okumura

Hideo Nomura

Mikio Kamada

Yoshiaki Tashiro

Shinichirou Etou

Kenichi Takamiya

Masao Oda

Takayoshi Kato

Shinichi Wada

Yoshinori Ishiai

Muriel Cohen

Hiroyasu Baba

Ren Hiyoshi

The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Imaging element

The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the wiring layer includes at least one ground line having a wider line width than a power supply line. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.

Light-receiving element and distance-measuring module

Suppressing a dead period at the time of mode switching. A solid-state imaging device includes: a plurality of pixels () that each outputs a luminance change of incident light; and a detection circuit () that outputs an event signal based on the luminance change output from each of the pixels, in which each of the pixels includes: a photoelectric conversion element () that generates a charge according to an incident light amount; a logarithmic conversion circuit () that is connected to the photoelectric conversion element and converts a photocurrent flowing out of the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; and a first transistor () having a drain connected to a sense node of the logarithmic conversion circuit.

Solid-state imaging device with transistor drain connected to sense node of logarithmic conversion circuit

Solid-state imaging devices are disclosed. In one example, a solid-state imaging device includes detection pixels that each output a luminance change of incident light, a detection circuit that outputs an event signal based on the luminance change, and a first common line connecting the detection pixels to each other. Each of the detection pixels may include a photoelectric conversion element, a logarithmic conversion circuit that outputs a voltage signal corresponding to a logarithmic value of photocurrent from the photoelectric conversion element, a first circuit that outputs a luminance change of incident light based on the voltage signal, a first transistor connected between the photoelectric conversion element and the logarithmic conversion circuit, and a second transistor connected between the photoelectric conversion element and the first common line. The detection circuit includes a second circuit that outputs the event signal based on the luminance change output from each of the detection pixels.

Solid-state imaging device and imaging device

The present technology relates to a light-receiving element and a distance measurement module. A light-receiving element includes: a first voltage application unit to which a voltage is applied; a first charge detection unit that is disposed at a periphery of the first voltage application unit; a second voltage application unit to which a voltage is applied; a second charge detection unit that is disposed at a periphery of the second voltage application unit; a third voltage application unit to which a first voltage is applied; and a voltage control unit that applies a second voltage to one of the first voltage application unit and the second a voltage application unit and causes the other to be in a floating state, the second voltage being different from the first voltage. The present technology is applicable to a light-receiving element.

Light-receiving element and distance measurement module using indirect time of flight

The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

Light reception device and distance measurement module

The present technology relates to a light reception device and a distance measurement module. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap to which a first voltage is applied and a first charge detection portion, and a second tap to which a second voltage different from the first voltage is applied and a second charge detection portion. The position of the on-chip lens differs depending upon an in-plane position of a pixel array section, so that an optical path length or a DC contrast of a chief ray from an object is uniform at in-plane pixels of the pixel array section. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

The present technology relates to a radiation detection apparatus that makes it possible to obtain a projection image of a radiation in a short period of time. The radiation detection apparatus includes a scintillator that emits scintillation light in response to incidence of a radiation, a pixel substrate on which a plurality of pixels each of which photoelectrically converts the scintillation light and outputs a pixel signal according to a light amount of the scintillation light is disposed in an array, a detection circuit substrate that includes an A/D (Analog to Digital) conversion unit for A/D converting the pixel signal and is stacked on the pixel substrate, and a compression unit that compresses digital data outputted from the A/D conversion unit. The present technology can be applied, for example, to an X-ray imaging apparatus that detects an X-ray to perform imaging and so forth.

Radiation detection apparatus

A light-receiving element includes an on-chip lens; an interconnection layer; and a semiconductor layer that is disposed between the on-chip lens and the interconnection layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage different from the first voltage is applied, a first charge detection unit that is disposed at the periphery of the first voltage application unit, a second charge detection unit that is disposed at the periphery of the second voltage application unit, and a charge discharge region that is provided on an outer side of an effective pixel region. For example, the present technology is applicable to a light-receiving element that generates distance information in a ToF method, or the like.

Light-receiving element and distance measurement module

The present disclosure relates to a detection device and electronic equipment, in which a detection accuracy of minute light can be improved. A detection device includes: a pixel array portion in which a plurality of first pixels including a photoelectric conversion unit, and a plurality of second pixels not including a photoelectric conversion unit, are arranged; and a driving unit configured to drive the first pixel and the second pixel. The present technology, for example, can be applied to a light detector, a radiation counter device performing radiation counting by using the light detector, and a biological examination device using the light detector, such as a flow cytometer.

Detection device and electronic equipment

The X-ray detection device according to an aspect of the present disclosure includes a scintillator that generates scintillation light in response to incident X-rays; a detection unit including a plurality of pixels each generating a pixel signal in response to the scintillation light incident thereon; and an output unit that generates X-ray two-dimensional projection data by using the pixel signals of the pixels. A pixel of the detection unit includes a plurality of subpixels that performs photoelectric conversion in response to the scintillation light; an AD conversion unit that applies AD conversion to outputs of the subpixels; and an adder that generates the pixel signal corresponding to the pixel by adding up outputs of the plurality of subpixels after the AD conversion. The present disclosure is applicable to an X-ray CT device and an X-ray FPD device.

X-ray detection device and detection method

Growing community of inventors

Kanagawa, Japan

Tsutomu Imoto