Hitachi-high-technologies Corporation

Tokyo University of Science Foundation

Ihi Corporation

Nihon Parkerizing Co., Ltd.

Yasunaga Corporation

Nippon Thermostat Co., Ltd.

Tokyo University of Science Educational Foundation Administrative Organization

Swcc Showa Cable Systems Co., Ltd.

Itoh Kikoh Co., Ltd.

Tsutomu Iida

Masahiro Nakajima

Masahiro Sumiya

Naomichi Omori

Takashi Nemoto

Naoki Fukushima

Hiromitsu Terauchi

Youji Takahashi

Makoto Kashibe

Tsuyoshi Umemoto

Koichi Yamamoto

Yasushi Sonoda

Seiichiro Yoshinaga

Junichi Uchida

Yuuzou Oohirabaru

Hiromichi Kawasaki

Yusaku Sakka

Masahiro Nagatani

Tatsuya Sakamoto

Ryosuke Miyahara

Yuki Haijima

Yuki Sueuchi

Yumiko Oto

Shigekazu Aoyama

Yohiko Mito

Yutaka Taguchi

Mitsunobu Nakatani

Syunsuke Kondo

Yasuhiko Honda

Masahiro Minowa

Kuniaki Mizuno

Kazunori Sawada

Yukio Takizawa

Tetsuya Deguchi

Hirokuni Nanba

A thrust foil bearing includes: a base plate including an insertion hole through which a shaft is inserted, and a supporting surface expanding in a direction orthogonal to an axial direction of the insertion hole; a step member placed on the supporting surface and formed of a different body from the base plate; and a back foil extending in a circumferential direction of the insertion hole and in which one part of the back foil is supported by the supporting surface and another part of the back foil next to the one part in the circumferential direction is supported by the step member.

Thrust foil bearing

The purpose of the present invention is to provide a thermoelectric conversion element having a film which not only maintains sufficient adhesion even when exposed to a high temperature but also exhibits excellent oxidation resistance and crack resistance. The problem is solved by a thermoelectric conversion element including a thermoelectric conversion component, in which the thermoelectric conversion component contains magnesium silicide and/or manganese silicide and is covered with a film containing Si and Zr.

Thermoelectric conversion element and thermoelectric conversion module having same

Polycrystalline magnesium silicide containing only carbon as a dopant and having carbon distributed at the crystal grain boundaries and within the crystal grains, a thermoelectric conversion material obtained using the polycrystalline magnesium silicide, a sintered compact, a thermoelectric conversion element, and a thermoelectric conversion module, and methods for producing polycrystalline magnesium silicide and a sintered compact.

Polycrystalline magnesium silicide and use thereof

A vacuum processing apparatus includes a vacuum processing chamber, an upper electrode, a lower electrode, a first high-frequency power source, a second high-frequency power source, a first matching box, a second matching box, a copper plate for connecting an electrode shaft of the lower electrode with the second matching box, a drive base on which the electrode shaft of the lower electrode and the second matching box are mounted, a drive unit for ascending or descending the drive base, and an exhaust unit disposed at a position equally distanced from an exhaust outlet by a distance.

Vacuum processing apparatus

A plasma processing method including disposing a wafer to be processed on a sample stage disposed in a processing chamber within a vacuum vessel, supplying an electric field using first high frequency power for plasma forming into the processing chamber and forming plasma, and supplying second high frequency power for bias potential forming to electrodes disposed within the sample stage and processing a film on a top surface of the wafer. At least the first or second high frequency power repeats a change of becoming a plurality of predetermined amplitudes for predetermined periods with a predetermined repetition period. In the processing of the film, supply of the high frequency power is changed by finally increasing a predetermined magnitude of amplitude among the repetition period, ratio of the period, and amplitude of the at least the first or second high frequency power, or first decreasing a predetermined magnitude of the amplitude.

Plasma processing method and plasma processing apparatus

A plasma processing apparatus is provided including a processing chamber disposed within a vacuum vessel to form plasma therein, a processing stage disposed in the processing chamber to mount a wafer thereon, a first power supply for outputting an electric field supplied to form the plasma and forming an electric field of a first frequency supplied with repetition of a high output and a low output during processing of the wafer, a second power supply for supplying power of a second frequency to an electrode disposed within the processing stage, and a control device for causing a first value between load impedance at time of the high output of the electric field and load impedance at time of the low output of the electric field to match with impedance of the first power supply.

Plasma processing apparatus and plasma processing method

Provided are: an Mg&#x2014;Si system thermoelectric conversion material which exhibits stably high thermoelectric conversion performance; a sintered body for thermoelectric conversion, which uses this Mg&#x2014;Si system thermoelectric conversion material; a thermoelectric conversion element having excellent durability; and a thermoelectric conversion module. A method for producing an Mg&#x2014;Si system thermoelectric conversion material according to the present invention comprises a step for heating and melting a starting material composition that contains Mg, Si, Sb and Zn. It is preferable that the contents of Sb and Zn in the starting material composition are respectively 0.1-3.0 at % in terms of atomic weight ratio.

Mg&#x2014;Si system thermoelectric conversion material, method for producing same, sintered body for thermoelectric conversion, thermoelectric conversion element, and thermoelectric conversion module

A plasma processing method using a plasma processing apparatus comprising a vacuum processing chamber, a substrate electrode having an electrostatic chucking film for chucking a material to be processed, an electrostatic chucking DC power supply and a substrate bias high-frequency power supply connected to the substrate electrode, and a plasma generating unit for generating the plasma in the vacuum processing chamber. The high-frequency voltage Vpp applied to the substrate electrode is monitored, and based on the Vpp signal thus monitored, the output voltage of the electrostatic chucking DC power supply is controlled thereby to maintain the voltage applied on the electrostatic chucking film at the desired value while at the same time controlling the output of the substrate bias high-frequency power supply in ramp with time.

Plasma processing method and apparatus

In power supply and a semiconductor making apparatus and a semiconductor fabricating method using the same, an abnormality can be detected when an offset occurs in a part constituting a closed-loop system of high-frequency power supply or dc power supply for a semiconductor making apparatus. Power supply for receiving a power value setting signal to set strength of power and a power on/off instruction to set on or off of outputting of the power interrupts the supply of the power even in a state in which a subsequent power on/off instruction is on if a power sense signal according to a value obtained by sensing the power exceeds a predetermined value when the power on/off instruction is off.

Power supply, a semiconductor making apparatus and a semiconductor wafer fabricating method using the same

Growing community of inventors

Tokyo, Japan

Tsutomu Iida