Fujitsu Quantum Devices Limited

Tsutomu Igarashi

Teruo Yokoyama

Kenji Arimochi

Eizo Mitani

Yasunori Tateno

Junichiro Nikaido

Shigeru Kuroda

The impurity concentration contained in a layer on an electron supply layer of a high electron mobility field effect transistor is set in the range of 1&tilde;10 to 1&tilde;10 atoms/cm , or the bandgap of a Schottky layer is set wider than that of the electron supply layer. Otherwise, in the steps of manufacturing the high electron mobility field effect transistor, after a silicon nitride film has been formed on a GaAs buried layer in which a second recess is formed and in a region on the inside of a first recess formed in a GaAs contact layer, the GaAs buried layer is still heated.

Compound semiconductor device and method of manufacturing the same

The impurity concentration contained in a layer on an electron supply layer of a high electron mobility field effect transistor is set in the range of 1&times;10,to 1&times;10,atoms/cm,, or the bandgap of a Schottky layer is set wider than that of the electron supply layer.

Growing community of inventors

Yamanashi, Japan

Tsutomu Igarashi