Matsushita Electric Works, Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Panasonic Electric Works Co., Ltd.

Other

Tsutomu Ichihara

Takuya Komoda

Koichi Aizawa

Yoshiaki Honda

Yoshifumi Watabe

Takashi Hatai

Nobuyoshi Koshida

Toru Baba

Yoshiyuki Takegawa

Yukihiro Kondo

Narimasa Iwamoto

Kouichi Aizawa

Jun Sakai

Hirofumi Kubota

Takao Miyai

Nobuhiro Ide

Hitoshi Yoshida

Kenji Tsubaki

Masao Kirihara

Masao Kubo

Koji Tsuji

Hiroshi Yamanaka

Sadayuki Sumi

Yoshiharu Sanagawa

Hiroshi Fukshima

Takaaki Yoshihara

Hiroaki Tachibana

Yuko Suzuka

Shigeaki Tomonari

Nobuyuki Miyagawa

Shin Okumura

Tomonori Yamada

Toshihiko Sato

Shigenari Takami

Yoichi Nishijima

Naomasa Oka

Keizi Kakite

Hiroaki Kitamura

Takuro Ishida

Satoshi Hyodo

Takayoshi Awai

Takuro Nakamura

Masashi Ishimaru

Koshi Akedo

Chousei Hamada

Jyunji Ikeda

Yoshiaki 42-6 Koaza Sunano Honda

A microfluidic device includes a flow path through which a reaction solution flows, and an introducing portion for introducing the reaction solution into the flow path, wherein the flow path passes alternately and repeatedly several times through a first temperature region and a second temperature region having different predetermined temperatures, and the flow path includes the repeating unit portions passing through the first temperature region and the second temperature region, the repeating unit portions having decreasing lengths as the repeating unit portions are located farther away from the introducing portion.

Microfluidic device for reducing fluctuation in the solution feeding rate of a reaction solution

An organic EL panel includes a first substrate, a first electrode disposed on the first substrate, an organic layer including a light emitting layer and disposed on the first electrode, a second electrode disposed on the organic layer, and an auxiliary electrode stacked on the first electrode. The auxiliary electrode includes a linear portion and a curved portion, and the curved portion has a greater line width than the linear portion.

Organic EL element and organic EL element manufacturing method having an auxiliary electrode includes a linear portion and a curved portion

An organic electroluminescent element is provided with a light transmissive substrate, a light transmissive electrode, a counter electrode paired with the light transmissive electrode, a sealing substrate facing the light transmissive substrate, an organic light emitting layer, and a resin structure. The organic light-emitting layer is disposed between the light transmissive electrode and the counter electrode. The organic light emitting layer is sealed with the light transmissive substrate and the sealing substrate. The resin structure is disposed between the light transmissive electrode and the light transmissive substrate. The resin structure is composed of a plurality of resin layers including a high refractive index layer and a low refractive index layer with different refractive indices. The high refractive index layer contains a physisorption-based moisture-absorbing material.

Organic electroluminescent element and illumination device

The organic electroluminescent element has a transparent substrate, a transparent first electrode, an organic layer, a second electrode, and a light-outcoupling layer. The light-outcoupling layer is formed between the transparent substrate and the first electrode. The first electrode, the organic layer and the second electrode constitute an electroluminescent laminate. A covering substrate facing the transparent substrate is adhered to the surface of the transparent substrate via an adhesive sealing portion surrounding the periphery of the electroluminescent laminate. A connection electrode extending outward from inside a surrounded region where the electroluminescent laminate is covered with the covering substrate is formed at least on the surface of the light-outcoupling layer. The average thickness of the light-outcoupling layer in an adhesion region where the adhesive sealing portion is formed is smaller than the thickness in the central region where the electroluminescent laminate is formed.

Organic electroluminescent element

The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

Electronic device and method for manufacturing same

Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes.

Method and apparatus for modifying object with electrons generated from cold cathode electron emitter

An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate. A dielectric top layer covers the substrate to conceal the semiconductor device formed in the top surface of the substrate. The thermal infrared sensor carried on a sensor mount which is supported above the semiconductor device by means of a thermal insulation support. The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.

Infrared sensor unit and process of fabricating the same

An infrared radiation element A heat insulating layer having sufficiently smaller thermal conductivity than a semiconductor substrate, is formed on a surface in the thickness direction of the semiconductor substrate. A heating layer, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer, is formed on the heat insulating layer. A pair of padsfor energization are formed on the heating layer. The semiconductor substrate is made of a silicon substrate. The heat insulating layer and the heating layer are formed by porous silicon layers having different porosities from each other, and the heating layer has smaller porosity than the heat insulating layer. By using the infrared radiation element as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.

Infrared radiation element and gas sensor using it

A field emission-type electron source has a plurality of electron source elements () formed on the side of one surface (front surface) of an insulative substrate () composed of a glass substrate. Each of electron source elements () includes a lower electrode (), a buffer layer () composed of an amorphous silicon layer formed on the lower electrode (), a polycrystalline silicon layer () formed on the buffer layer (), a strong-field drift layer () formed on the polycrystalline silicon layer (), and a surface electrode () formed on the strong-field drift layer (). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.

Field emission-type electron source and method of producing the same

Disclosed is an electron sourceincluding an electron source elementformed on the side of one surface of an insulative substrate. The electron source elementincludes a lower electrode, a composite nanocrystal layerand a surface electrode. The composite nanocrystal layerincludes a plurality of polycrystalline silicon grains, a thin silicon oxide filmformed over the surface of each of the grains, a number of nanocrystalline siliconsresiding between the adjacent grains, and a silicon oxide filmformed over the surface of each of the nanocrystalline silicons. The silicon oxide filmis an insulating film having a thickness less than the crystal grain size of the nanocrystalline silicon. The surface electrodeis formed of a carbon thin filmlaminated on the composite nanocrystal layerwhile being in contact therewith, and a metal thin filmlaminated on the carbon thin film

Quantum device

In a field emission-type electron source (), a strong field drift layer () and a surface electrode () consisting of a gold thin film are provided on an n-type silicon substrate (). An ohmic electrode () is provided on the back surface of the n-type silicon substrate (). A direct current voltage is applied so that the surface electrode () becomes positive in potential relevant to the ohmic electrode (). In this manner, electrons injected from the ohmic electrode () into the strong field drift layer () via the n-type silicon substrate () drift in the strong field drift layer (), and is emitted to the outside via the surface electrode (). The strong field drift layer () has: a number of semiconductor nanocrystals () of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (); and a number of insulating films () each of which is formed on the surface of each of the semiconductor nanocrystals () and each having film thickness to an extent such that an electron tunneling phenomenon occurs.

Field emission electron source and production method thereof

An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source comprises an electrically conductive substrate of p-type silicon substrate ; n-type regions of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers formed on the n-type regions which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region ; poly-silicon layers between the strong field drift layers ; surface electrodes of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer and the poly-silicon layers . By selecting a pair of the n-type regions and the surface electrodes and thereby making electron emitted from the crossing points due to combination of the surface electrode to be electrically applied and the n-type region to be electrically applied, electrons can be discharged from desired regions of the surface electrodes

Field emission electron source, method of producing the same, and use of the same

There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode made of a gold thin film is formed on the strong electric field drift part . And the ohmic electrode is formed on the back surface of the n-type silicon substrate . In this field emission electron source , when the surface electrode is disposed in the vacuum and a DC voltage is applied to the surface electrode which is of a positive polarity with respect to the n-type silicon substrate (ohmic electrode ), electrons injected from the n-type silicon substrate are drifted in the strong electric field drift part and emitted through the surface electrode . The strong electric field drift part comprises a drift region which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate , which is an electrically conductive substrate, and a heat radiation region which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region

Field emission electron source

An electron source ( ) has an electron source element ( ) including a lower electrode ( ), a drift layer ( ) and a surface electrode ( ). The drift layer ( ) is interposed between the lower electrode ( ) and the surface electrode ( ). When a certain voltage is applied between the surface electrode ( ) and the lower electrode ( ) such that the surface electrode ( ) has a higher potential than that of the lower electrode ( ), a resultingly induced electric field allows electrons to pass through the drift layer ( ) and then the electrons are emitted through the surface electrode ( ). When a forward-bias voltage is applied between the surface electrode ( ) and the lower electrode ( ), a reverse-bias voltage is applied after the forward-bias voltage has been applied to release out of the drift layer ( ) an electron captured by a trap ( ) in the drift layer ( ).

Field emission-type electron source and method of biasing the same

A field emission-type electron source includes an insulative substrate in the form of a glass substrate having an electroconductive layer formed thereon. A strong electrical field drift layer in the form of an oxidized porous polycrystalline silicon layer is formed over the electroconductive layer . This electroconductive layer includes a lower electroconductive film , made of copper and formed on the insulative substrate , and an upper electroconductive film made of aluminum and formed over the electroconductive film . The strong electrical field drift layer is formed by forming a polycrystalline silicon layer on the electroconductive layer , rendering the polycrystalline silicon layer to be porous and finally oxidizing it. The upper electroconductive film has a property that reacts easily with silicon and, therefore, formation of an amorphous layer which would occur during formation of the polycrystalline silicon layer can be suppressed.

Field emission-type electron source and manufacturing method thereof

Growing community of inventors

Hirakata, Japan

Tsutomu Ichihara