Hitachi, Ltd.

Nippon Hoso' Kyokai

Hitachi Denshi Kabushiki Kaisha

Health Sensing Co., Ltd.

Riverbell Inc.

Tsutomu Fujita

Motoyasu Terao

Tadaaki Hirai

Eiichi Maruyama

Keiichi Shidara

Naohiro Goto

Kazuo Sunahara

Masatomo Kanegae

Kiyoshi Watanabe

Kazuo Sato

Iwao Takemoto

Hideaki Yamamoto

Shusaku Nagahara

Toshiki Suzuki

Kyuichi Niizeki

Mitsuo Ichikawa

Siro Aizawa

Tatsuhiko Iida

Tsunehisa Horiuchi

Yoshio Iwata

Youichi Shimizu

[Problem] To provide means by which sleep states can be measured, observed, or evaluated easily. [Solution] A sleep state measurement device that includes a phase coherence calculating means for calculating phase coherence on the basis of the instantaneous phase difference between the instantaneous phase of heart rate variability acquired from a sleeping animal and the instantaneous phase of the breathing pattern of the animal for the same time series as the heart rate variability.

Device and method for measuring sleep state, phase coherence calculation device, body vibration signal measurement device, stress level measurement device, sleep state measurement device, and cardiac waveform extraction method

An imaging apparatus for imaging a first object at a normal distance and a second object nearer than the first object readily with high precision. The imaging apparatus has an imaging lens, an imaging device for capturing an image formed by the imaging lens, and a camera control unit. The imaging lens is a multifocal lens and contains a first lens portion having a first focal length for imaging the first object (e.g., the user of the imaging apparatus) at a normal distance and a second lens portion having a second focal length for imaging the second object (e.g., a bar code) nearer than the first object. The first and second lens portions are arranged on the same plane and formed in one piece. The information collected by imaging the second object is used for processing such as communications or displays.

Imaging apparatus with a multifocal lens formed of two pieces with different focal lengths

An accommodation portion of a solid-state imaging device having a recessed shape in section is so formed in a package such that the center thereof is deviated from the center of the package. A light-receiving element having a light-receiving portion as well as a circuit portion for driving the light-receiving portion that are formed on the same plane, is so disposed in the accommodation portion such that the center of the light-receiving portion is in agreement with the center of the package. The outer diameter of the imaging device can be reduced, and the imaging center can be brought into agreement with the center of the light-receiving portion.

Solid-state imaging device

A solid-state color imaging camera comprises three solid-state image sensors each of which has a two-dimensional array of picture elements arranged with respective predetermined pitches in vertical and horizontal directions. The first, second and third image sensors are used for green, red and blue lights. The optical positioning of the first image sensor is shifted with respect to the second and third image sensors by the half of the picture element pitch in the vertical direction.

Solid-state color imaging camera

A photoelectric device comprises a signal electrode, a layer of amorphous photoconductor containing 50 atomic percent or more of selenium and an N-type semiconductor layer made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide and disposed therebetween, which has a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band.

Semiconductor layer of oxygen depletion type cerium oxide or lead oxide

A faceplate structure of a multi-color image pickup tube has a light transmitting thin glass plate, to which are bonded a rectangular color separating filter base plate deposited with a color separating stripe filter at the center of one surface of the thin glass plate with the color separating stripe filter opposing the thin glass plate, and a collar plate having a rectangular through hole for receiving therein the color separating filter base plate. On the other surface of the light transmitting thin glass plate are successively deposited a transparent electroconductive film and a photoconductive film. The faceplate structure is airtightly secured to one open end of an envelope of the image pickup tube with its other surface opposing the inside of the envelope.

Image pickup tube with rectangular support plate for stripe filter

A method for forming a thin film of cerium oxide as a blocking layer which constitutes a portion of a photoelectric film of a blocking type image pickup tube is disclosed. A substrate deposition rate in a vacuum deposition process is established in a range between 0.01 to 0.6 A/sec to prevent the deposition of particles which result in black or white spots in a picture image. It is more effective to select a particle size of 5 .mu. or more for the primary particles to be deposited.

Method for vapor depositing a cerium oxide film

The evaporation boat comprises superposed upper and lower sheets. The upper sheet includes a upwardly convexed central section and a pair of side sections bent back toward the central section and the lower sheet includes a downwardly convexed central section and a pair of side sections bent inwardly toward the upper sheet. The upper and lower sheets are superposed each other such that the central sections of the upper and lower sheets define a substantially closed chamber for accomodating source material to be evaporated, that slit shaped vapor passages are formed between the upper and lower sheets or the opposite sides of the chamber and that any straight line drawn between any point on the surface of the source material and any point in the passages intersects the inner wall of the upper or lower sheets.

Evaporation boats for use in vapor deposition

A photoconductive film comprises a first region containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively, a second region disposed on the first region and containing Se in which Te is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, a third region disposed on the second region and containing Se in which an element capable of forming deep levels in Se is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, and a fourth region disposed on the third region and containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively.

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Mobara, Japan

Tsutomu Fujita