Mitsubishi Materials Corporation

Mitsubishi Materials Electronic Chemicals Co., Ltd.

Other

Tsutomu Atsuki

Katsumi Ogi

Tadashi Yonezawa

Nobuyuki Soyama

Hiroto Uchida

Go Sasaki

Shan Sun

Tsunetoshi Honda

Hiroyuki Imai

Osamu Sakaya

Tom E Davenport

Thomas Domokos Hadnagy

Natsumi Sakuraba

Kensuke Kegeyama

Gakuji Uozumi

Keiko Endo

Katumi Ogi

The present invention provides a conductive silica sol composition containing at least a silica sol composition, and at least one selected from perfluoroalkyl sulfonates perfluoroalkyl sulfone imide salts, and bis(fluorosulfonyl) imide salts.

Conductive silica sol composition, and molded article produced using the same

Disclosed is a positive electrode forming material for a positive electrode of a battery, the material including particles of a positive electrode active material and fine carbon fibers adhering to surfaces of particles of the positive electrode active material in a shape of a network. The positive electrode active material is preferably fine particles having an average particle diameter of 0.03 to 40 &#x3bc;m. Each of the fine carbon fibers is preferably carbon nanofiber having an average fiber diameter of 1 to 100 nm and an aspect ratio of 5 or greater. The carbon nanofiber is surface-oxidized. The positive electrode forming material includes a binder. The content of the fine carbon fibers is 0.5 to 15 parts by mass and the content of the binder is 0.5 to 10 parts by mass with respect to 100 parts by mass of the positive electrode active material.

Positive electrode forming material, component thereof, method for producing the same and rechargeable lithium-ion battery

The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (Pb,Ca,Sr,La,)(Zr,Ti,)O,, wherein 0.9&lE;V&lE;1.3, 0&lE;W&lE;0.1, 0&lE;X&lE;0.1, 0<Y&lE;0.1, 0<Z&lE;0.9 and at least either of W and X is not 0, is formed from a solution where thermally decomposable organometallic compounds of respective metals constituting said metal oxide, hydrolyzable organometallic compounds thereof, and partially hydrolyzed products and/or polycondensation products of said hydrolyzable organometallic compounds are dissolved in an organic solvent in such a proportion as to provide the metal atom ratio represented by the above-mentioned formula.

Ferroelectric thin films and solutions: compositions

A composition for forming a film, comprising a solution of metal compounds in an organic solvent, wherein a molar ratio of metals in said solution is (Sr.sub.1-n R.sub.n):Bi:(Ta.sub.Y Nb.sub.1-Y)=X:Q:2, R is at least one element selected from the group consisting of La, Ce, Pr, Nd, Eu, Sm, Tb, Gd and Er, and 0&lt;n.ltoreq.0.1, 0.4.ltoreq.X&lt;1, 0.ltoreq.Y.ltoreq.1 and 1.5.ltoreq.Q.ltoreq.3.5, can be used to form a ferroelectric film. This ferroelectric film is useful in a ferroelectric capacitor, particularly a ferroelectric capacitor for a non-volatile memory.

Bi-based ferroelectric composition and thin film, method for forming the

A composition for forming a metal oxide thin film pattern which is a solution containing one or more hydrolytic metal compounds selected from the group consisting of hydrolytic organometallic compounds (e.g., metal alkoxide) and metal halides, and a water generating agent which frees water under the effect of irradiation with active rays (e.g., o-nitrobenzyl alcohol and 2-nitroethanol) and, as required, an acid generating agent which frees acid under the effect of irradiation with active rays is disclosed. A thin film pattern is formed by coating the composition onto a substrate, irradiating active rays for forming an image on the resultant photosensitive coating film, developing the same with water or an alcoholic solvent to remove the non-exposed portion, and heat-treating the substrate to convert the remaining film into a metal oxide, thereby forming a negative-type metal oxide thin film pattern.

Composition for forming metal oxide thin film pattern and method for

Dielectrics represented by (Sr.sub.x Bi.sub.1-x)Bi.sub.2 Ta.sub.2 O.sub.y, wherein 0&lt;x&lt;1, and y represents the total number of oxygen atoms bonded to the respective metals, and thin films thereof, can be prepared by repeating the steps of applying compositions for forming the Sr--Bi--Ta--O-based dielectric thin films on substrates, drying and conducting a first-firing a plurality of times until the desired film thickness is achieved, and then conducting a second-firing for crystallization and compositions for forming Bi-based ferroelectric thin films and target materials for forming Bi-based ferroelectric thin films, both represented by the metal composition ((Sr.sub.a (Ba.sub.b, Pb.sub.c)).sub.x Bi.sub.y (Ta and/or Nb).sub.z wherein 0.4.ltoreq.X&lt;1.0, 1.5.ltoreq.Y.ltoreq.3.5, Z=2, 0.7X.ltoreq.a&lt;X, and 0&lt;b+c.ltoreq.0.3X can be formed by repeatedly applied onto substrates, dried and subjected to a first-firing a plurality of times until the desired film thickness is achieved, and then subjected to a second-firing for crystallization, while the target materials are used to form films by sputtering, and the films undergo heat treatment during and/or after their formation for crystallization.

Bi-based dielectric thin films, and compositions and method for forming

A composition comprising Ba and Sr salts of carboxylic acids represented by the formula: C.sub.n H.sub.2n+1 COOH wherein 3.ltoreq.n.ltoreq.7, and having structures represented by the following formula (I): ##STR1## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6 each represent a hydrogen atom, a methyl group or an ethyl group, and M represents Ba or Sr, can be used to form thin films of Ba.sub.1-x Sr.sub.x Ti.sub.y O.sub.3. A composition comprising a barium carboxylate, a strontium carboxylate and a titanium alkoxide in a mixed solvent of a carboxylic acid and an ester, can also be used to form Ba.sub.1-x Sr.sub.x Ti.sub.y O.sub.3 thin films. The proportion of the mixed solvent is 2-11 molar times as much as the Ti. A composition comprising salts of carboxylic acids represented by R.sup.a COOH wherein R.sup.a is a linear or branched alkyl group having 3-7 carbon atoms, as the Ba and Sr sources, and Ti(OR.sup.b).sub.4 wherein R.sup.b is a linear or branched alkyl group having 1-7 carbon atoms, as the Ti source, can also be used to form thin films of Ba.sub.1-x Sr.sub.x TiO.sub.3.

Composition and method for forming Ba.sub.1-X Sr.sub.x Ti.sub.y O.sub.3

A pattern of a non-volatile high-performance ferroelectric thin film memory is formed by applying a composition containing hydrolytic metal compounds, and a photosensitizer which generates water when irradiated with active rays onto a substrate. The resultant film is exposed to active rays in compliance with a prescribed pattern to form an image and developed with a solvent to remove non-exposed portions, and then the remaining exposed portions are subjected to a heat treatment to convert the exposed portions into a dielectric substance comprising a metal oxide as expressed by the following formula (I):

Growing community of inventors

Omiya, Japan

Tsutomu Atsuki