Shenzhen China Star Optoelectronics Technology Co., Ltd.

Wuhan China Star Optoelectronics Technology Co., Ltd.

Tsungying Yang

Dejiun Li

Yuejun Tang

Dandan Liu

Hongqing Cui

Haiyan Sun

Yang Chen

Xiaohui Jiang

The OLED tiled display includes front and back lighting display units that emitting lights toward each other. The front lighting display unit includes a first substrate and a first organic light emitting device. The back lighting display unit includes a second substrate and a second organic light emitting device. The first and second light emitting devices neighbor laterally on each other, but are vertically aligned to a second extended section of the second substrate and a first extended section of the first substrate, respectively. The present invention achieves small gaps and resolves the problem of obvious gaps in an OLED tiled display by piecing together the front and back lighting display units, where the substrate of the front lighting display unit functions as encapsulation layer to the back lighting display unit, and the substrate of the back lighting display unit functions as encapsulation layer to the front lighting display unit.

OLED tiled display and a related tiling method

An LCD includes a backlight module, an array substrate, and a color filter layer. The color filter layer includes a first filter unit, a second filter unit and a black matrix unit. A transmittance rate of the second filter unit is larger than that of the first filter unit. The black matrix layer is connected between the first filter unit and second filter unit. The width of the black matrix unit is larger than that of the third black matrix unit. The width of the black matrix unit facing the first filter unit is larger than that of the black matrix unit facing the second filter unit. This kind of asymmetrical black matrix layer not only best prevents lowering the pixel aperture ratio, but also improves color shift of images when light goes through pixels of low transmittance as pixels of high transmittance are turned off.

LCD improving color shift at large viewing angle

The present invention provides a method for manufacturing a curved liquid crystal display panel, which comprises coating a sealing gum on a first or a second frame sealing region; filing liquid crystals between the two substrates and adhering the two substrates together; performing a first curing on partial sealing gum on a first set or a third set of frame bodies; bending the first set and the third set of frame bodies obtained after the first curing along the extension direction of the first set of frame bodies; performing a second curing on uncured sealing gum on the two bended substrates.

Method for manufacturing curved liquid crystal display panel

A method is provided for manufacturing an anode connection structure of an organic light-emitting diode. The anode connection structure includes: a thin-film transistor and an anode of an organic light-emitting diode arrange don the thin-film transistor. The thin-film transistor includes a low-temperature poly-silicon layer formed on a substrate, a gate insulation layer formed on the low-temperature poly-silicon layer, a gate formed on the gate insulation layer, a protection layer formed on the gate, and a source/drain formed on the protection layer. The method includes a step of forming a hole in the thin-film transistor to expose the low-temperature poly-silicon layer and a step of forming an electrically conductive layer in the hole for direct engagement with the low-temperature poly-silicon layer to serve as an anode and also the source/drain of the thin-film transistor. The anode of the organic light-emitting diode is thus directly connected to the low-temperature poly-silicon layer.

Anode connection structure of organic light-emitting diode and manufacturing method thereof

The present invention provides an anode connection structure of an organic light-emitting diode and a manufacture method thereof. The structure includes: a thin-film transistor () and an anode () of an organic light-emitting diode arrange don the thin-film transistor (). The thin-film transistor () includes a low-temperature poly-silicon layer () formed on a substrate (), a gate insulation layer () formed on the low-temperature poly-silicon layer (), a gate formed on the gate insulation layer (), a protection layer () formed on the gate, and a source/drain () formed on the protection layer (). The anode () of the organic light-emitting diode is connected to the low-temperature poly-silicon layer (). The present invention makes the anode of the organic light-emitting diode directly connected to the low-temperature poly-silicon layer of the thin-film transistor in order to shorten the distance between two adjacent switching thin-film transistors, increase the number of pixels in a unit area (each inch), and improve the resolution of a panel using the anode connection structure of the organic light-emitting diode.

Growing community of inventors

Guangdong, China

Tsungying Yang