Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsung-Yuan Huang

Yu-Hao Hsu

Wei-Jer Hsieh

Tsung-Hsien Huang

A memory device and a method of operating the memory device are disclosed. In one aspect, the memory device includes a word line driver connected to a word line, a row of memory cells connected to the word line, each memory cell powered by a first supply voltage, and a power circuit. The power circuit is configured to provide the first supply voltage to the word line driver when a read condition is satisfied, and a second supply voltage to the word line driver when the read condition is not satisfied, the second supply voltage being less than the first supply voltage.

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Hsinchu, Taiwan

Tsung-Yuan Huang