Hon Hai Precision Industry Co., Ltd.

Tsinghua University

Nanning Fugui Precision Industrial Co., Ltd.

Ambit Microsystems (shanghai) Ltd.

Koobe Inc.

Tsung-Yuan Huang

Meng-Fan Chang

Han-Wen Hu

Ting-Wei Chang

Chia-Ao Chu

Yi-Heng Hsu

Cheng-Xin Xue

Wei-Hao Chen

Hui-Yao Kao

Kuang-Sung Wang

Je-Syu Liu

Huan-Ting Lin

Augmented reality head mounted display

A memory unit is controlled by a word line, a reference voltage and a bit-line clamping voltage. A non-volatile memory cell is controlled by the word line and stores a weight. A clamping module is electrically connected to the non-volatile memory cell via a bit line and controlled by the reference voltage and the bit-line clamping voltage. A clamping transistor of the clamping module is controlled by the bit-line clamping voltage to adjust a bit-line current. A cell detector of the clamping module is configured to detect the bit-line current to generate a comparison output according to the reference voltage. A clamping control circuit of the clamping module switches the clamping transistor according to the comparison output and the bit-line clamping voltage. When the clamping transistor is turned on by the clamping control circuit, the bit-line current is corresponding to the bit-line clamping voltage multiplied by the weight.

Memory unit with adaptive clamping voltage scheme and calibration scheme for multi-level neural network based computing-in-memory applications and computing method thereof

4G router

An operating method of the soft-verify write assist circuit of the resistive memory provides a voltage level applying step, a write operating step and a write voltage controlling step. The voltage level applying step is for applying a plurality of voltage levels to the reference voltage, the word line and the switching signal, respectively. The write operating step is for driving the memory cell to perform in a set process or a reset process via the first three-terminal switching element, the second three-terminal switching element and the soft-verify controlling unit during a write operation. The write voltage controlling step is for controlling the write voltage to be increased in the ramping cycle and decreased in the soft-verify cycle.

Soft-verify write assist circuit of resistive memory and operating method thereof

Growing community of inventors

Taipei, Taiwan

Tsung-Yuan Huang