Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsung-Ying Liu

Chui-Ya Peng

Yeh-Hsun Fang

Chih-Fen Chen

Bang-Yu Huang

In a method for semiconductor processing, a semiconductor substrate is provided. The semiconductor substrate defines at least one first trench therein. The at least one first trench has a first depth (d). A coating layer is deposited onto the semiconductor substrate using at least one precursor under a setting for a processing temperature (T). The coating layer defines at least one second trench having a second depth (d) above the at least one first trench. A first depth parameter (t) of the second depth (d) relative to the first depth (d) is determined. The processing temperature (T) is then determined based on the first depth parameter (t).

Method for calibrating temperature in chemical vapor deposition

In a method for semiconductor processing, a semiconductor substrate is provided. The semiconductor substrate defines at least one first trench therein. The at least one first trench has a first depth (d). A coating layer is deposited onto the semiconductor substrate using at least one precursor under a setting for a processing temperature (T). The coating layer defines at least one second trench having a second depth (d) above the at least one first trench. A depth parameter (t) the second depth (d) relative to the first depth (d) is determined. The processing temperature (T) is then determined based on a pre-determined standard reference curve comprising a plurality of references depth parameters in a first range as a function of a plurality of reference processing temperatures in a second range.

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Hsin-Chu, Taiwan

Tsung-Ying Liu