Au Optronics Corporation

Tsung-Yi Lin

Tsung-Tien Wu

Cheng-Chieh Chang

Kang-Hung Liu

Pin-Miao Liu

Wen-Wei Yang

Chin-Yuan Ho

A micro-light-emitting diode device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer has a first bottom surface. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer. The second semiconductor layer and the active layer have an interface. A surface of the second semiconductor layer opposite to the active layer is a light-exiting surface of the micro-light-emitting diode device. A distance between the light-exiting surface and the interface decreases from a central axis of the second semiconductor layer to an edge of the second semiconductor layer, so as to provide a focusing effect for the light by the light-exiting surface.

Micro-light-emitting diode device

A light emitting diode includes a semiconductor structure, a first electrode, a second electrode, and an extending electrode. The semiconductor structure has at least one sidewall and includes a light emitting layer, a first semiconductor layer, and a second semiconductor layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer of the semiconductor structure. The first semiconductor layer is disposed between the light emitting layer and the first electrode. The second electrode is electrically connected to the second semiconductor layer of the semiconductor structure. The second semiconductor layer is disposed between the light emitting layer and the second electrode. The extending electrode is disposed on the sidewall of the semiconductor structure and is electrically connected to the second electrode.

Light emitting device and manufacturing method thereof

A light emitting device includes a substrate, a light emitting chip, a first electrode, and a second electrode. The light emitting chip includes a first and a second semiconductor layers. The first semiconductor layer is disposed on the substrate. The second semiconductor layer is stacked on the first semiconductor layer and forms a light emitting junction with the first semiconductor layer. The first electrode connects to the first semiconductor layer and the second electrode connects to the second semiconductor layer. The light emitting device may further include a transparent layer that is disposed on the substrate and surrounds and contacts the lateral of the light emitting chip. A refraction index of the transparent layer is between a refraction index of the light emitting chip and that of a vacuum. The first electrode may penetrate the second semiconductor layer to connect to the first semiconductor.

Light emitting device with a light emitting junction formed by stacking semiconductor layers

A pixel structure includes a plurality of sub-pixels. Each of the sub-pixels includes a first light-emitting diode (LED) and a second LED. The first LED is configured to emit a first color light. The second LED is configured to emit a second color light. Each of the first LED and the second LED includes an anode and a cathode. The anode of the first LED and the anode of the second LED are coupled to a same signal line. The cathode of the first LED and the cathode of the second LED are coupled to different signal lines.

Pixel circuit structure and method for driving the same

A micro-light-emitting diode (micro-LED) device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer includes a first bottom surface. The active layer is disposed on the first semiconductor layer. The second semiconductor layer disposed on the active layer includes a second bottom surface. A surface of the second semiconductor layer opposite to the active layer is a light-exiting surface of the micro-LED device. The second semiconductor layer has different thicknesses, in which a minimum thickness of the second semiconductor layer is located at an edge or at least one side of the second semiconductor layer. Vertical-projection zones of the first semiconductor layer, the active layer, and the second semiconductor layer on the first bottom surface are substantially the same.

Micro-light-emitting diode device and method for manufacturing the same

A method for transferring micro devices is provided. The method includes the following operations: providing a carrier substrate and forming micro devices on the carrier substrate; forming a fixing layer on the carrier substrate, in which the fixing layer is at least in contact with bottom parts of the micro devices; patterning the fixing layer to selectively expose a portion of the micro devices; providing a transfer device correspondingly located on the carrier substrate, and picking up the exposed micro devices by the transfer device; and providing a receiving substrate and transferring the exposed micro devices to the receiving substrate.

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Hsin-Chu, Taiwan

Tsung-Yi Lin