Epistar Corporation

Tsung-Xian Lee

Min-Hsun Hsieh

Hsin-Mao Liu

Cheng-Nan Han

Chih-Ming Wang

Tzer-Perng Chen

Hsing-Chao Chen

Jen-Chau Wu

Hung-Hsuan Chen

Chih-Peng Ni

Ming-Chi Hsu

Wei-Yu Chen

Yi-Ming Chen

Shih-I Chen

Ching-Pei Lin

Ching-San Tao

Been-Yu Liaw

Jhih-Sian Wang

Masafumi Sano

Yi-Jui Huang

Kuang-Ping Chao

Chih-Chiang Lu

Ta-Cheng Hsu

Chien-Yuan Wang

Han-Min Wu

Steve Meng-Yuan Hong

Cheng Nan Han

Meng-Yuan Hong

Yao Chiu Lin

Jian-Fong Jhou

Yun-Jie Huang

Bo-Song Chen

Ching San Tao

Chiu-Lin Yao

Chien-Fu Huang

Tzu-Chieh Hsu

Chien-Liang Liu

Yu-Ren Peng

Zong-Xi Chen

Tien-Yang Wang

Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

Light-emitting device

The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

Optoelectronic element having reflective layer in contact with transparent layer covering side and bottom surfaces of the optoelectronic element

A light-emitting apparatus includes a first light-emitting device, a second light-emitting device, separated from the first light-emitting device by a first distance, a diffusion layer, covering the first light-emitting device and the second light-emitting device, a prism layer, disposed on the diffusion layer and an LCD module, disposed on the prism layer. The first light-emitting device includes a light-field with a radius on the LCD module and the radius is two or more times larger than the first distance.

Light-emitting apparatus

Optoelectronic element

An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.

Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

The present application discloses a light-emitting apparatus having a light-emitting device and a wavelength conversion layer. The light-emitting device has a first top surface and a first side surface, and the wavelength conversion layer has a second top surface and a second side surface and covers the first top surface. A ratio of a distance between the first top surface to the second top surface and a distance between the first side surface and the second side surface is between 1.1&#x2dc;1.3.

This disclosure discloses an illumination apparatus. The illumination apparatus comprises a cover comprising a second portion and a first portion, and a light source disposed within the cover. An average thickness of the first portion is greater than that of the second portion.

Illumination apparatus

An embodiment of the invention discloses an optoelectronics system. The optoelectronic system includes an optoelectronic element having a first width; an adhesive material enclosing the optoelectronic element and having a second width larger than the first width; a phosphor structure formed between the optoelectronic element and the adhesive material; and a transparent substrate formed on the adhesive material.

Optoelectronic system

This disclosure discloses an illumination apparatus. The illumination apparatus comprises an inner cover comprising a top surface having a first length; a pedestal on which the inner cover is disposed comprising a top surface having a second length; and a holder supporting the pedestal; wherein the first length is greater than the second length.

An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.

Optoelectronic element and manufacturing method thereof

A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.

Integrated lighting apparatus and method of manufacturing the same

Growing community of inventors

Hsinchu, Taiwan

Tsung-Xian Lee