Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsung Wei Chen

Li-Hsin Chu

Po-Feng Tsai

Chun-Jung Huang

Yung-Lin Hsu

Kuang Huan Hsu

Henry Peng

The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

Method for an ion implantation process employing an ion-collecting device that collects a distribution of ejected ions from a target to correct a tilt angle of the target

Method for ion implantation that adjusts a targets tilt angle based on a distribution of ejected ions from a target

The present disclosure describes a system and a method for a ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

Method for ion implantation that adjusts a target's tilt angle based on a distribution of ejected ions from a target

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Taipei, Taiwan

Tsung Wei Chen