Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsinghua University

Tsung-Ta Tang

Hsien-Ming Lee

Yi-Ting Wang

Chun-Chieh Wang

Huai-Tei Yang

Yueh-Ching Pai

Po-Yu Lin

Chi-Yu Chou

Chi-Jen Yang

Da-Yuan Lee

Kuo-Feng Yu

Chien-Hao Chen

Chung-Chiang Wu

Chia-Ching Lee

Jian-Hao Chen

Hung-Chin Chung

Chia-Wei Chen

Shih-Hang Chiu

Hsin-Han Tsai

Chih-Yu Hsu

Chung Ta Chen

Ci-Ling Pan

Chan-Shan Yang

Pei-Chen Yu

Ru-Pin Pan

A method of forming a semiconductor device includes forming a gate electrode in a wafer. The formation of the gate electrode includes depositing a work-function layer, after the work-function layer is deposited, performing a treatment on the wafer, wherein the treatment is performed by soaking the wafer using a silicon-containing gas; after the treatment, forming a metal capping layer over the work-function layer; and depositing a filling metal over the metal capping layer.

Capping layers in metal gates of transistors

A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.

Semiconductor device and method of manufacture

The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.

Formation and in-situ etching processes for metal layers

The invention provides a liquid crystal based optoelectronic device, including an upper substrate and a lower substrate, a liquid crystal layer sandwiched between the upper substrate and the lower substrate, and a pair of indium tin oxide nano-whisker layers formed on the inner surfaces of the upper substrate and the lower substrate, wherein the indium tin oxide nano-whisker layer is used as an alignment layer for aligning liquid crystal molecules in the liquid crystal layer.

Liquid crystal based optoelectronic device

Growing community of inventors

Hsinchu, Taiwan

Tsung-Ta Tang