Northrop Grumman Systems Corporation

Trw Limited

Tsung-Pei Chin

Michael Edward Barsky

Michael Wojtowicz

Ronald W Grundbacher

Augusto L Gutierrez-Aitken

Donald James Sawdai

A double heterojunction bipolar transistor structure having desirable properties of a low base-emitter turn-on voltage and no electron blocking discontinuities in the base-collector junction. These properties are achieved by selecting base, emitter and collector materials to provide a bandgap profile that exhibits abrupt transitions at the heterojunctions, such that both abrupt transitions are due to transitions in the valence band edge of the bandgap, but not in the conductive band edge of the bandgap.

Low turn-on voltage, non-electron blocking double HBT structure

A HEMT device comprises a buffer layer disposed over a substrate. A partially-relaxed channel is disposed over the buffer layer and a barrier layer is disposed over the channel. A cap layer is disposed over the barrier layer and a gate is positioned on the barrier layer. A source and a drain are positioned on the barrier layer on opposite sides of the gate.

Fully relaxed channel HEMT device

Partially relaxed channel HEMT device

Growing community of inventors

Marina Del Rey, CA, United States of America

Tsung-Pei Chin