Epistar Corporation

Realtek Semiconductor Inc.

Tsung-Hsien Yang

Yi-Ming Chen

Tzu-Chieh Hsu

Jhih-Sian Wang

Han-Min Wu

Tzu-Ghieh Hsu

Chia-Liang Hsu

Chih-Chiang Lu

Chun-Yu Lin

Yao-Ning Chan

Yi-Tang Lai

Kun-De Lin

Chao-Hsing Chen

Chien-Fu Huang

Jia-Kuen Wang

Shih-I Chen

Wen-Hung Chuang

Tzu-Yao Tseng

Bo-Jiun Hu

Tsung-Hsun Chiang

Ying-Dar Lin

Min-Yen Tsai

Kuan-Yi Lee

Ye-Ming Hsu

Jhih-Jheng Yang

Chih-Wei Wei

Chia-Yu Ku

Ching-Sheng Chen

A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

Semiconductor light-emitting device

A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.

Light-emitting diode

A light-emitting diode comprises: a first light-emitting structure, comprising: a first area comprising a side wall; a second area; and a first isolation path having an electrode isolation layer between the first area and the second area, wherein the side wall of the first area is in the first isolation path; an electrode contact layer covering the side wall of the first area, wherein the electrode contact layer is separated from electrode isolation layer; an electrical connecting structure covering the second area; and an electrical contact layer under the electrical connecting structure, wherein the electrical contact layer directly contacts the electrical connecting structure; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer.

A light-emitting diode is provided. The light-emitting diode comprises: a first light-emitting structure, comprising: a first area; a second area; a first isolation path having an electrode isolation layer between the first area and the second area; an electrode contact layer covering the first area; and an electrical connecting structure covering the second area; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and the electrode contact layer covers a sidewall of the first area.

A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.

Light emitting device having a light extraction layer

A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.

A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.

The application provides a light-emitting diode array, including: a first light-emitting diode including a first area; a second area; a first isolation path between the first area and the second area, and the first isolation path including an electrode isolation layer; and an electrode contact layer covering the first area; a second light-emitting diode including a semiconductor stack layer; and a second electrical bonding pad on the semiconductor stack layer; and a second isolation path between the first light-emitting diode and the second light-emitting diode, wherein the second isolation path includes an electrical connecting structure electrically connected to the first light-emitting diode and the second light-emitting diode.

Light-emitting diode array

The present disclosure discloses a method of manufacturing a light-emitting device comprising the steps of providing a light-emitting wafer having a semiconductor stacked structure and an alignment mark, sensing the alignment mark, and separating the light-emitting wafer into a plurality of light-emitting diodes and removing the alignment mark accordingly.

Light emitting device with planar current block structure

A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.

Semiconductor light-emitting device and method for manufacturing the same

A frame-merging method is adapted for a network that includes mesh and terminal units, in which any two units capable of communication form a communication pair, and one of the units operates as a key unit to transmit pending frames according to the frame-merging method. The frame-merging method includes: determining whether the key unit is a mesh or a terminal unit; for the communication pair recorded in each pending frame, selecting a suitable scheme from a plurality of frame-merging schemes, and extracting at least one of the pending frames from among the pending frames for use as part or all of a priority frame set; and comparing a total size of all frames included in the priority frame set with a suitable frame size, so as to determine whether the key unit is to send an aggregated frame. A frame-merging apparatus is also disclosed.

Growing community of inventors

Hsinchu, Taiwan

Tsung-Hsien Yang