Industrial Technology Research Institute

Altek Corporation

Tsung-Hsien Lin

Tarng-Shiang Hu

Yi-Kai Wang

Jia-Chong Ho

Jing-Yi Yan

Yu-Yuan Shen

Cheng-Chung Lee

Chi-Chang Liao

Hsing-Lung Wang

Wei-Ting Hsu

Po-Wen Fang

Xiu-Hong Bian

An auto framing method is applied to a camera apparatus with an image receiver and a screen. The auto framing method includes receiving a detection image from the image receiver, computing a distance between the image receiver and an identification feature of the detection image, switching a framing mode of the screen into a normal mode or a single mode in accordance with a comparison result of the distance and a predefined distance threshold, setting a preset step count and a preset frame interval to compute a coordinate variation of the identification feature when position difference between a current focus area and a cropping area generated by the framing mode conforms to a predefined difference condition, and utilizing the coordinate variation to acquire an area variation of the cropping area, and scaling the cropping area to a target resolution for displaying on the screen in accordance with the area variation.

Auto framing method and related camera apparatus

A reflective liquid crystal display panel capable of performing data programming and/or data erasing via a polarized light is provided. The reflective liquid crystal display panel includes a first substrate, a second substrate, a liquid crystal layer, a transflective film, a retarder and a polarizer. The second substrate is disposed over the first substrate. The liquid crystal layer is located between the first substrate and the second substrate and an optical aligned material is doped in the liquid crystal layer. The transflective film is disposed below the first substrate, and the transflective film allows the polarized light to pass through, so that the orientation of the optical aligned material doped liquid crystal layer can be controlled by the polarized light. The transflective film reflects external light source. The retarder is disposed between the transflective film and the first substrate. The polarizer is disposed on the second substrate.

Reflective liquid crystal display panel capable of being photo-programmed and restored by polarized lights

A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.

Thin film transistor and organic electro-luminescent display device

A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.

Method of fabricating thin film transistor and organic electro-luminescent display device

A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

Method of fabricating vertical thin film transistor

A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; fabricating a patterned spacing layer on the flexible substrate; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate.

Growing community of inventors

Hsinchu, Taiwan

Tsung-Hsien Lin