Richwave Technology Corp.

United Microelectronics Corp.

National Cheng-Kung University

Other

Benq Materials Corporation

Taiwan Colour and Imaging Technology Corporation

Tsung-Han Lee

Chih-Sheng Chen

Cheng-Tung Huang

Yi-Han Ye

Yi-Ting Wu

Chuan-Chen Chao

Chang-Yi Chen

Wen-Liang Hwang

Pei-Chuan Hsieh

Yi-Shan Tsai

Cheng-Shih Lai

Po-Tsun Kuo

Meng-Jhen Wu

Chao-Yun Chen

Cheng-Hsin Tsai

Chih-Hsung Huang

Shu-Yi Chang

Chen-Hsien Yu

Ming-Hsi Kao

Yu-Hsuan Lai

Bow Wang

The present invention relates to a method for measuring muscle mass, including: a first selection step, wherein a frame selection information is obtained by using a frame to select a fascia region from a provided computed tomography image under the condition that the window width ranges from 300 HU to 500 HU and the window level ranges from 40 HU to 50 HU, wherein the selected range of the fascia region includes a muscle; and a second selection step, wherein a muscle information of the muscle is obtained by calculating a pixel value in the frame-selected fascia region under the condition that the HU value of the CT image ranges from −29 HU to 150 HU.

Method for measuring muscle mass

A radio frequency (RF) switch includes a first terminal, a second terminal, a series switch circuit, a shunt switch circuit, an inductor and a reference voltage terminal. An RF signal at the first terminal. The series switch circuit is coupled to the first terminal, the second terminal, and the shunt switch circuit. The shunt switch circuit includes a sub-switch circuit, a transistor coupled to the sub-switch circuit, and a compensation capacitor parallel-coupled to the transistor. The inductor is coupled to the shunt switch circuit and the reference voltage terminal. When the RF signal is operated in a first frequency band, the first transistor is turned on for the shunt switch circuit and the inductor to provide a first impedance. When the RF signal is operated in a second frequency band, the first transistor is turned off for the shunt switch circuit and the inductor to provide a second impedance.

Radio frequency switch for providing constant isolation over multiple frequency bands

A switching circuit includes a first transmission terminal, a second transmission terminal, a third transmission terminal, and a variable impedance circuit. The first and the second transmission terminals coupled to a common node form a first transmission path. The third transmission terminal coupled to the common node forms a second transmission path with the first transmission terminal. The variable impedance circuit has a first terminal coupled between the common node and the third transmission terminal, and a second terminal coupled to a first reference potential terminal. When the first transmission path transmits a first signal, a first frequency bandwidth range provided by the variable impedance circuit is determined according to a first frequency of the first signal so that the variable impedance circuit provides low impedance in the first frequency bandwidth range, and the first frequency bandwidth range covers the first frequency.

Switching circuit

A signal switching apparatus includes a signal control switch, a switch circuit, a blocking capacitor and a surge current dissipating circuit. The signal control switch coupled between a first signal transceiving end and a second signal transceiving end is turned on or turned off according to a first control signal. The switch circuit having at least one first transistor is controlled by a second control signal to be turned on or off, and a first end of the switch circuit is coupled to the first signal transceiving end. The blocking capacitor is coupled between a second end of the switch circuit and a reference voltage terminal. The surge current dissipating circuit having at least one second transistor is coupled between the second end of the switch circuit and the reference voltage terminal. The second transistor is configured to dissipate a surge current and also turned off when operated normally.

Signal switching apparatus

A transistor includes a first doping well, a second doping well, a first doping area, a second doping area, a gate layer, and at least one compensation capacitor. The first doping well and the second doping well are formed in a structure layer. The first doping area and the second doping area are formed in the first doping well and have a first conductivity type, the second doping well has a second conductivity type, and the first doping area is used for transmitting the signal. The at least one compensation capacitor is used for adjusting a voltage drop of a parasitic junction capacitor between the first doping area and the first doping well, a voltage drop of a parasitic junction capacitor between the first doping well and the second doping well, or a voltage drop of a parasitic junction capacitor between the second doping well and the structure layer.

Transistor for increasing a range of a swing of a signal

A method for deriving characteristic values of a MOS transistor is described. A set of &#x3b7;values is provided. A set of Vvalues (i=1 to M, M&#x2267;3) is provided. A set of RSD(i=1 to M&#x2212;1, j=i+1 to M) values each under a pair of Vand V, or a set of V(q is one of 1 to M, j is 1 to M excluding q) values under Vis derived for each &#x3b7;, with an iteration method. The &#x3b7;value making the set of RSDvalues or Vvalues closest to each other is determined as an accurate &#x3b7;value. The mean value of RSDat the accurate &#x3b7;value is calculated as an accurate RSD value.

Method for deriving characteristic values of MOS transistor

Provided is a method of fabricating a MOS device including the following steps. At least one gate structure is formed on a substrate, wherein the gate structure includes a gate conductive layer and a hard mask layer disposed on the gate conductive layer. A first implant process is performed to form source and drain extension regions in the substrate, wherein the gate conductive layer is covered by the hard mask layer. A process is of removing the hard mask layer is performed to expose the surface of the gate conductive layer. A second implant process is performed to form pocket doped regions in the substrate, wherein the gate conductive layer is not covered by the hard mask layer.

Method of fabricating MOS device

A method of managing visiting guests by face recognition includes: extract the face image of the visiting guest; determine if the face image of the guest is stored in the database; display the face image data comprising the face image, guest information and visiting information if the face image is stored or enroll the new face image data and then display the face image data just registered; set up at least one authorized item; execute the visiting goal confined by the authorized items; monitor the status of the visiting guest; wait until the guest leaves; and finally record and update log page and face image data of the visiting guest in the database. Therefore, the method can reduce security guard workload, assist security guards or automatically and solely execute the function of guard entrance without any careless mistakes, and update visiting guest information in real time.

Method of managing visiting guests by face recognition

Acrylic resin is used as a protection film of a polyvinyl alcohol polarizer film to compose a polarizer plate, wherein the glass transition temperature of the acrylic resin is higher than 50&#xb0; C. A preparation method of the polarizer plate is also disclosed.

Polarizer plate and preparation method thereof

An encoding system for a data set, particularly for a video data set is disclosed in the present invention. The encoding system includes a coding strategies represented as a tree-based structure, a cost projection system for each tree node, and a parameter searching algorithm for coding strategies to encode a data set. When the encoder parameters are obtained, the coding strategies and rate-allocation have better performance comparing to the related art.

System and method for encoding a data set

A high speed disk drive utilizing a vibration absorber, coupled between a center base and a retaining frame via a plurality of vibration transfer-dampers, to absorb vibration of data readout head and data storage disk, thereby reducing vibration of both data readout head and outer housing of disk drive, allowing high speed data readout from the data storage disk.

Growing community of inventors

Taipei, Taiwan

Tsung-Han Lee