Winbond Electronics Corporation

Inotera Memories, Inc.

Tsung-Cheng Yang

Szetsen Steven Lee

Tah-Te Shih

A DRAM capacitor structure is disposed on the interior surface of a vertical hollow cylinder of a support structure overlying a semiconductor substrate. The support structure further includes a horizontal supporting layer that is integrally connected with the vertical hollow cylinder. A fabrication method for forming the DRAM capacitor structure is also provided.

Capacitor structure and fabrication method thereof

A gas scrubber comprises a gas inlet pipe that provides the scrubber with gases to be processed; means for initiating reactions of decomposition that is directed to initialize the decomposition of gases; an oxygen and natural gas inlet pipes to provide the necessary gases for combustion; a chamber of decomposition into which the gases to be processed are decomposed under thermal process carried out by combustion; and means for scrubbing byproducts produced in the chamber of decomposition. The means for initiating the reactions of decomposition is directed to initialize the decomposition of gas through producing radicals thereof. Thereby, the decomposition of gases under combustion in the chamber of decomposition can be accelerated, and less thermal energy is required from the combustion.

Growing community of inventors

Taichung, Taiwan

Tsung-Cheng Yang