Nan Ya Technology Corporation

Tsung-Cheng Chen

Ying-Cheng Chuang

Zhi-Yi Huang

Tzu-Li Tseng

The present disclosure provides a manufacturing method of a semiconductor structure. The method includes: forming a conformal layer over a first patterned layer over a substrate; forming a second layer over the conformal layer and between portions of the first patterned layer; performing a first etching to form a second patterned layer and a patterned conformal layer; performing a second etching to remove a portion of the first patterned layer to form a first inclined member of the first patterned layer tapered away from the substrate and lining a vertical portion of the patterned conformal layer, and to remove a portion of the second patterned layer to form a second inclined member of the second patterned layer tapered away from the substrate and lining the vertical portion of the patterned conformal layer; and performing a third etching to remove the vertical portions of the patterned conformal layer.

Method of manufacturing semiconductor structure with improved etching process

The present disclosure provides a method of manufacturing a semiconductor structure. The method includes forming a first patterned layer over a substrate; forming a second patterned layer over the substrate and alternately arranged with the first patterned layer; performing an etching, thereby forming an arched surface of the first patterned layer and an arched surface of the second patterned layer; forming a sacrificial layer over the first patterned layer and the second patterned layer, wherein a plurality of air gaps are defined by the substrate, the first patterned layer, the second patterned layer and the sacrificial layer; removing the sacrificial layer above the plurality of air gaps, thereby forming a planar top surface of the first patterned layer and a planar top surface of the second patterned layer; and patterning the substrate using the first patterned layer and the second patterned layer as a mask.

Method of manufacturing semiconductor structure

A method of manufacturing a semiconductor structure includes the following operations. A buffer layer is formed over a substrate. A first top hard mask is formed on the buffer layer, in which the first top hard mask has a first trench to expose a first portion of the buffer layer. A spacer layer is formed to cover a sidewall of the first trench and an upper surface of the first top hard mask and the first portion of the buffer layer to form a second trench over the first portion. The top portion and the bottom portion are etched to form a thinned top portion and a thinned bottom portion. A second top hard mask is formed in the second trench. The thinned top portion and the vertical portion of the spacer layer are removed.

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Yilan County, Taiwan

Tsung-Cheng Chen