Epistar Corporation

Huga Optotech Inc.

Tsung-Cheng Chang

Chia-Cheng Liu

Ya-Yu Yang

Shang-Ju Tu

Jen-Inn Chyi

Yu-Jiun Shen

Chih-Ching Cheng

Heng-Kuang Lin

Yih-Ting Kuo

A semiconductor power device includes a substrate; a buffer structure formed on the substrate; a barrier structure formed on the buffer structure; a channel layer formed on the barrier structure; and a barrier layer formed on the channel layer; wherein the barrier structure includes a first functional layer on the buffer structure, a second functional layer formed between the first functional layer and the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer; wherein a material of the first back-barrier layer includes Alx1Ga1-x1N, a material of the first functional layer includes Alx2Ga1-x2N, a material of the interlayer includes Alx3Ga1-x3N, a material of the second functional layer includes Alx4Ga1-x4N, wherein 0<x1≤1, 0≤x2≤1, 0≤x3≤1, 0≤x4<1, and x1≠x2; and wherein the first functional layer includes a first thickness, the second functional layer includes a second thickness, and the second thickness is greater than the first thickness.

Semiconductor power device

A semiconductor power device includes a substrate, a buffer structure formed on the substrate, a barrier structure formed on the buffer structure, a channel layer formed on the barrier structure, and a barrier layer formed on the channel layer. The barrier structure includes a first functional layer on the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer. A material of the first back-barrier layer comprises AlGaN, a material of the first functional layer comprises AlGaN, 0&#x3c;x1&#x2264;1, 0&#x2264;x2&#x2264;1, and x1&#x2260;x2. The interlayer includes a carbon doped or an iron doped material.

A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.

High electron mobility transistor and methods for manufacturing the same

A semiconductor power device, comprising: a substrate; a first semiconductor layer with a first lattice constant formed on the substrate; a first grading layer formed on the first semiconductor layer and comprising a first portion; a second grading layer formed on the first grading layer; a second semiconductor layer with a second lattice constant formed on the second grading layer; a first interlayer formed in the first grading layer and adjacent to the first portion of the first grading layer; and a second interlayer formed in the second grading layer; wherein the first interlayer comprises a first superlattice including a series of AlGaN/AlGaN alternate layers, (x1-y1)&#x2267;0.2, and the second interlayer comprises a second superlattice including a series of AlGaN/AlGaN alternate layers, (x2-y2)&#x2267;0.2, wherein the average of x1 and y1 is larger than that of x2 and y2.

A field effect transistor (FET) disclosed herein comprising a substrate, a C-doped semiconductor layer disposed on the substrate, a channel layer disposed on the C-doped semiconductor layer, and an electron supply layer disposed on the channel layer. The FET further comprises a diffusion barrier layer disposed between the C-doped semiconductor layer and the channel layer, wherein the diffusion barrier layer contacts the channel layer directly.

Growing community of inventors

Taichung, Taiwan

Tsung-Cheng Chang