Growing community of inventors

Hsinchu, Taiwan

Tsung-Che Tsai

Average Co-Inventor Count = 2.98

ph-index = 5

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 69

Tsung-Che TsaiJam-Wem Lee (17 patents)Tsung-Che TsaiYi-Feng Chang (9 patents)Tsung-Che TsaiMing-Hsiang Song (4 patents)Tsung-Che TsaiYue-Der Chih (2 patents)Tsung-Che TsaiHung-Cheng Sung (2 patents)Tsung-Che TsaiCheng-Hsiung Kuo (2 patents)Tsung-Che TsaiTzu-Heng Chang (2 patents)Tsung-Che TsaiWun-Jie Lin (1 patent)Tsung-Che TsaiYu-Ti Su (1 patent)Tsung-Che TsaiJen-Chou Tseng (1 patent)Tsung-Che TsaiHung Cho Wang (1 patent)Tsung-Che TsaiRoger Wang (1 patent)Tsung-Che TsaiTsung-Che Tsai (18 patents)Jam-Wem LeeJam-Wem Lee (124 patents)Yi-Feng ChangYi-Feng Chang (43 patents)Ming-Hsiang SongMing-Hsiang Song (59 patents)Yue-Der ChihYue-Der Chih (104 patents)Hung-Cheng SungHung-Cheng Sung (99 patents)Cheng-Hsiung KuoCheng-Hsiung Kuo (43 patents)Tzu-Heng ChangTzu-Heng Chang (39 patents)Wun-Jie LinWun-Jie Lin (82 patents)Yu-Ti SuYu-Ti Su (67 patents)Jen-Chou TsengJen-Chou Tseng (65 patents)Hung Cho WangHung Cho Wang (64 patents)Roger WangRoger Wang (1 patent)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. Taiwan Semiconductor Manufacturing Comp. Ltd. (18 from 40,635 patents)


18 patents:

1. 10134726 - Diode string implementation for electrostatic discharge protection

2. 9929143 - N-type metal oxide semiconductor (NMOS) transistor for electrostatic discharge (ESD)

3. 9887275 - Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching

4. 9601627 - Diode structure compatible with FinFET process

5. 9576945 - Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protection

6. 9548367 - Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching and the FinFETs thereof

7. 9484338 - Diode string implementation for electrostatic discharge protection

8. 9368629 - Diode structure compatible with FinFET process

9. 9236733 - Electrostatic discharge protection

10. 9214540 - N-type metal oxide semiconductor (NMOS) transistor for electrostatic discharge (ESD)

11. 9209265 - ESD devices comprising semiconductor fins

12. 9209302 - Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching

13. 9093492 - Diode structure compatible with FinFET process

14. 8963200 - Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protection

15. 8906767 - Semiconductor device with self-aligned interconnects

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as of
12/5/2025
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