Sony Corporation

Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Texas Instruments Corporation

Sumitomo Electric Industries, Limited

National Institute of Advanced Industrial Science and Technology

Tsuneyuki Hayashi

Takashi Saito

Akira Kojima

Hiroyuki Fukasawa

Manabu Yamauchi

Taro Itatani

Toshiro Shimada

Hiroaki Matsuoka

Shinji Hirai

Kazuhide Tago

Sachio Shimada

Hiroyuki Ishii

Hiromitsu Miwa

Toshio Konishi

Shuuji Toda

Toshio Minakata

Akio Tsunaki

Tatsuo Furuichi

Masamichi Ishikawa

Yoshiyuki Amano

According to one embodiment, a semiconductor device includes a first circuit configured to generate a first voltage, a second circuit configured to transfer the generated first voltage to a first terminal, and a third circuit configured to generate a first signal that demonstrates a first level when a voltage at the first terminal is higher than or equal to a threshold voltage, and a second level when the voltage of the first terminal is lower than the threshold voltage, wherein the second circuit is configured to interrupt transfer of the first voltage, based on the first signal at the second level.

Semiconductor device

A gate of the first p-type MOS transistor and the first and second control circuits are electrically coupled to a first node. The first control circuit lowers a voltage or the first node between a first time and a second time at which the first p-type MOS transistor is off. The second control circuit lowers the voltage of the first node between a third time and a fourth time at which the first p-type MOS transistor is on. The second time is later than the first time. The fourth time is later than the second and third times. The first p-type MOS transistor is turned on during a first period. A voltage decrease amount of the first node per unit time in the first control circuit is greater than that in the second control circuit.

Switching device

According to one embodiment, a semiconductor device includes a first switch element including a first end to which a first voltage is applied, and a second end and a gate electrically coupled to a first node, a second switch element including a first end to which a second voltage is applied, and a second end and a gate electrically coupled to the first node, a third switch element including a first end to which the second voltage is applied, a second end electrically coupled to a second node, and a gate coupled to the first node, a fourth switch element including a gate coupled to the second node, and a first terminal electrically coupled to a first end of the fourth switch element and outputting a signal based on a voltage of the second node.

Switch circuitry comprise a boosting circuit, a first switch, and a second switch. The boosting circuit boosts an input voltage. The first switch includes an input part to which the input voltage is applied, an output part which outputs an output voltage based on a voltage applied to the input part, and a driving part to which a driving voltage is applied, the first switch in which a voltage which the boosting circuit outputs is applied to the driving part and which outputs the output voltage based on the input voltage when the input voltage is higher than the output voltage. The second switch short-circuits the driving part of the first switch and the input part of the first switch when a value obtained by subtracting the input voltage from a voltage applied to the driving part exceeds a driving threshold.

Switch circuitry

According to the present embodiment, a semiconductor integrated circuit is a semiconductor integrated circuit that drives a switching element including a first field-effect transistor and a second field-effect transistor connected to the first field-effect transistor in anti-series, and includes a driving circuit and a control circuit. The driving circuit turns on or off the first and second field-effect transistors. The control circuit controls the driving circuit in accordance with a control signal input from one signal input terminal.

Semiconductor integrated circuit and control method of semiconductor integrated circuit

A semiconductor integrated circuit includes abnormality detectors configured to detect abnormalities in the semiconductor integrated circuit, and a reference voltage output circuit. The reference voltage output circuit includes switches controlled in accordance with detection signals from the abnormality detectors. The reference voltage output circuit is configured to output as an error signal, a reference voltage having one of a plurality of different values depending on conduction states of the switches of the reference voltage output circuit.

Semiconductor integrated circuit

A semiconductor integrated circuit includes an output circuit connected between a power supply and a node at which a load can be connected. The output circuit electrically connects and disconnects the power supply to/from the node according to a logic level of a first signal. A discharge circuit is connected between the node and a reference potential. The discharge circuit disconnects the node from the reference potential when a second signal supplied to the discharge circuit is a first level and connects the node to the reference potential when the second control signal is a second level. A discharge control circuit sets the second signal to the second level when the first signal changes to the second level from first level and then sets the second signal to the first level after a predetermined time has elapsed from a time when the first signal changes to the second level.

Semiconductor integrated circuit including discharge control circuit

A driver is provided. The driver generally comprises a current source, a current mirror, an amplifier and a presetting circuit. The current source is generally adapted to provide a reference current to the current mirror. The transistor is coupled to the current mirror. The amplifier has the first input that is coupled to the current mirror, a second input that is coupled to a node between the transistor and the current mirror, and an output that is coupled to the control electrode of the transistor. The presetting circuit is coupled to the control electrode of the transistor so that it can preset the potential of the control electrode of the transistor to a potential that allows current driving of the transistor with a predetermined timing after a control signal is received.

Driver circuit

A gate portion constituting a gate of a resin molding die is made of a hard alloy having a hardness greater than the predetermined hardness in the iron-based hard alloy used to from a cavity block and a center block. Opposing surfaces of the cavity block halves include a silicone rubber layer at least at the portions thereof which contact portions of the lead frame in a semiconductor encapsulation molding apparatus.

Resin molding apparatus

A gate portion constituting a gate of a resin molding die is made of a hard alloy having a hardness greater than the predetermined hardness in the iron-based hard alloy used to form a cavity block and a center block. Opposing surfaces of the cavity block halves include a polytetrafluoroethylene layer at least at the portions thereof which contact portions of the lead frame in a semiconductor encapsulation molding apparatus.

A magnetically floating carrier system has a carriage body which is adapted to be floated by the attraction force of floating magnets acting upon the bottom surfaces of rails. The carriage body is driven by a linear motor. The rails are mounted on a framework extending longitudinally to define a track and having one side thereof supported. The carriage body is provided with a support member extending upwards at the other side of the framework to a point above the top surfaces of the framework. A pallet for supporting a load is mounted on the top end of the support member so as to be disposed over the framework. The carriage carries four magnets at front and rear parts thereof which are adapted to exert a force of attraction on the pair of rails. The magnets are mounted at both ends of two beams mounted on front and rear parts of the carriage body for see-saw motions and steering motions.

Magnetically floating carrier system with carriage below rail support

An apparatus for winding a wire around a toroidal core is disclosed which includes a core holder for supporting the toroidal core, moving the same in the directions of first and second axes and rotating the same, first and second clamps for clamping one end of the wire, a clamp driver for holding the first and second clamps and moving the position thereof in the directions of the first and second axes and rotating the same, a wire holder positioned near the toroidal core for supporting the wire, a detector for detecting the position of the wire and the aperture of the toroidal core and a control device for controlling the core holder and the clamp driver by the output from the detector.

Toroidal core winding apparatus

A wire having conductor core, insulating film formed on the conductor core and adhesive film formed on the insulating film is closely and fixedly wound by a predetermined number of turns. Thus, a coil for an electric motor is obtained. A pair of electrodes are formed by stripping portions of the insulating film and portions of the adhesive film formed on the insulating film.

Coil for electric motor

A coil assembly for a flat brushless motor comprises a coil of wire, and a bobbin including a flangeless plate-like portion having a peripheral surface on which the coil is wound with the axis of the coil being normal to opposed major surfaces of the plate-like portion, and with at least a part of the peripheral surface having a profile which deviates from a parallel to the coil axis so as to include sections angled in opposite direction from such parallel to the axis for preventing movement of the coil relative to the bobbin in the direction of the coil axis. The mentioned profile of the peripheral surface may be V-shaped and either outwardly concave or convex, or the peripheral surface may have a ridge extending therealong to define such profile. The opposed major surfaces of the plate-like portion are desirably in the form of triangles with two sides thereof radiating from the motor shaft, and with a support portion of the bobbin extending from the third side of the triangular plate-like portion and being offset therefrom for convenient attachment to a fixed mounting plate of the motor.

Coil assembly for flat brushless motor

A method and apparatus for forming a coreless armature winding for an electric machine, such as a motor, having two or more poles. A source of wire is revolved in a fixed orbit about a rotatable cylinder, the axis of this orbit being inclined with respect to the longitudinal axis of the cylinder. The wire is guided about first and second guide members positioned at opposite spaced apart locations on the surface of the cylinder. These guide members define the opposite ends of the coreless armature winding such that when the wire is wound thereabout, one complete turn is formed on the surface of the cylinder. The cylinder is rotated about its longitudinal axis in synchronism with the revolution of the wire, the cylinder being rotated by a predetermined angle corresponding to the pitch of the winding so that, as the wire continues to revolve, successive skewed turns are formed on the surface of the cylinder. The guide members are rotated as the cylinder rotates, and after a predetermined number of turns have been formed, the guide members are returned to their respective initial positions. Then, the foregoing operation is repeated until a complete armature has been formed. In one embodiment, the guide members are returned to their respective initial positions after each complete turn is formed. In accordance with another embodiment, the guide members are returned to their initial positions after a number of turns corresponding to a pole width have been formed.

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Tokyo, Japan

Tsuneyuki Hayashi