Nec Corporation

Renesas Electronics Corporation

Tsuneo Takeuchi

Yoshihiro Hayashi

Munehiro Tada

Fuminori Ito

Naoya Furutake

Kenichiro Hijioka

Yuukoh Katoh

Kazushi Amanuma

Sota Shinohara

Nobuhiro Tanabe

Yoshimichi Harada

Shinobu Saito

Yukinobu Murao

Fuminori Itoh

A method for forming porous insulating film using cyclic siloxane raw material monomer, includes forming porous insulating film using the mixed gas of a cyclic organosiloxane raw material and a compound raw material including a part of chemical structure including the cyclic organosiloxane raw material. The compound raw material may include a compound including a part of side chain of the cyclic organosiloxane raw material.

Method for forming porous insulating film and semiconductor device

A semiconductor device manufacturing method for manufacturing a semiconductor device having a transistor mounted in a wiring of a plural-layer structure includes in manufacturing the semiconductor device that is formed on a semiconductor element and includes a barrier insulating film, a porous interlayer insulating film, a wiring, a via plug formed by embedding a metal wiring material in a wiring trench, and a via hole formed in the porous interlayer insulating film, irradiating an electron beam or an ultraviolet ray onto at least a portion of the porous interlayer insulating film before forming an opening in the barrier insulating film.

Wiring structure, semiconductor device and manufacturing method thereof

An organic silicon film is formed by carrying out chemical vapor deposition with organic silicon compound being used as a raw material gas. The organic silicon compound contains at least silicon, hydrogen and carbon as a constituent thereof, and contains two or more groups having unsaturated bond, per a molecule thereof. The organic silicon compound is used in mixture with a silicon hydride gas.

Method of fabricating organic silicon film, semiconductor device including the same, and method of fabricating the semiconductor device

A semiconductor device with a high-strength porous modified layer having a pore size of 1 nm or less, which is formed, in a multilayer wiring forming process, by forming a via hole and a wiring trench in a via interlayer insulating film and a wiring interlayer insulting film and then irradiating an electron beam or an ultraviolet ray onto the opening side walls.

The present invention provides a process of producing a porous insulating film effective as an insulating film constituting a semiconductor device and a process of producing a porous insulating film having high adhesion to a semiconductor material, which is in contact with the upper and lower interfaces of the insulating film. Gas containing molecule vapor of at least one or more organic silica compounds, which have a cyclic silica skeleton in its molecule and have at least one or more unsaturated hydrocarbon groups bound with the cyclic silica skeleton is introduced into plasma to grow a porous insulating film on a semiconductor substrate.

Porous insulating film, method for producing the same, and semiconductor device using the same

In a formation method of a porous insulating film by supplying at least organosiloxane and an inert gas to a reaction chamber and forming an insulating film by a plasma vapor deposition method, a partial pressure of the organosiloxane in the reaction chamber is changed by varying a volume ratio of the organosiloxane and the inert gas to be supplied during deposition. Thus, the dielectric constant of the insulating film in the semiconductor device is reduced while the adhesion of the insulating film with other materials is improved. It is desirable that the organosiloxane be cyclic organosiloxane including at least silicon, oxygen, carbon, and hydrogen, and that the total pressure of the reaction chamber be constant during deposition.

Formation method of porous insulating film, manufacturing apparatus of semiconductor device, manufacturing method of semiconductor device, and semiconductor device

A ferroelectric memory device includes a ferroelectric capacitance element formed through an insulating film on a semiconductor substrate. The ferroelectric capacitance element includes a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film. The upper electrode has a laminate structure which contains a conductive oxide layer of first metal which is connected with the ferroelectric film.

Ferroelectric memory device with improved ferroelectric capacity characteristic

In a method of manufacturing a semiconductor device, a CMOS section composed of an N-channel MOS transistor and a P-channel MOS transistor and a memory section composed of at least a transfer gate MOS transistor is formed on a substrate. A plurality of conductive plugs is formed to penetrate a laminate insulating film to the MOS transistors. The laminate insulating film is composed of a first insulating film and a second insulating film. A capacitor section is formed on the laminate insulating film and the capacitor section is composed of an upper electrode, a dielectric film and a lower electrode. A third insulating film is formed on the laminate insulating film and the capacitor section. A wiring pattern is formed on the third insulating film to partially penetrate the second insulating film connect to the plurality of conductive plugs. A wiring pattern may be disposed in the laminate insulating film to connect at least two of the plurality of conductive plugs.

Growing community of inventors

Tokyo, Japan

Tsuneo Takeuchi