Fujifilm Corporation

Fujilfilm Corporation

Tsuneo Sasamoto

Toshiaki Hayakawa

Masanori Nagase

Jiro Matsuda

A solid state imaging device comprises: a photoelectric converting portion provided on a semiconductor substrate; a charge transfer path, formed in an adjacent position to the photoelectric converting portion, that receives a signal charge generated in the photoelectric converting portion and transfers the signal charge in a predetermined direction; and a gate electrode that transfers the signal charge from the photoelectric converting portion to the charge transfer path, wherein the gate electrode comprises polysilicon having a different conductive type from that of a semiconductor region forming a charge storing portion of the charge transfer path.

Solid state imaging device and method of manufacturing the same

A method of manufacturing a color filter comprises: applying a color filter material of a negative type onto a surface; an exposing treatment to the color filter material; a developing treatment for the exposed color filter material; a light irradiating step of irradiating a light on the developed color filter material; and a heating treatment, in this order, so as to form the color filter.

Growing community of inventors

Miyagi, Japan

Tsuneo Sasamoto