Matsushita Electric Industrial Co., Ltd.

Tsuneo Mitsuyu

Kiyotaka Wasa

Yoshio Manabe

Ichiro Tanahashi

Kazuhiro Okawa

Osamu Yamazaki

Shusuke Ono

Ayumu Tsujimura

Masaru Yoshida

Kazuhiro Ohkawa

Makoto Kitabatake

Masao Uchida

Shigeo Hayashi

Masatoshi Kitagawa

Akihisa Yoshida

Takeshi Karasawa

Hiroaki Yamamoto

Seiji Nishino

Hideaki Adachi

Teruhiro Shiono

Hidetaka Higashino

Satoshi Kamiyama

Shigeo Yoshii

Shigeru Hayakawa

Ritsuo Inaba

Yoshii Shigeo

Ayumi Tsujimura

Hisamitsu Maeda

An information recording medium has a recording portion where three-dimensional information can be recorded. The recording portion includes at least one particle-containing layer (recording layer or a recording auxiliary layer) containing particles absorbing at least a part of light having a predetermined wavelength and substantially transparent to a recording light and a reproducing light having a wavelength longer than the predetermined wavelength and a particle holding material substantially transparent to the recording and reproducing lights. The mean particle size of the particles is preferably shorter than the wavelengths of the recording and reproducing lights.

Information recording medium and its production method, and optical information recording reproducing apparatus

An impurity doped SiC substrate and SiC thin film are irradiated with a laser light having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light may be within the range of 9.5 &mgr;m to 10 &mgr;m.

Method and apparatus for activating semiconductor impurities

An impurity doped SiC substrate,and SiC thin film,are irradiated with a laser light,having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light,may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light,may be within the range of 9.5 &mgr;m to 10 &mgr;m.

Method and device for activating semiconductor impurities

The present invention relates to nonlinear optical composites for optical devices such as optical switches and to a method for producing the composites. The composites, comprising optically transparent substances exhibiting linear optical response and metal containing particles dispersed therein, utilize the nonlinear optical effect associated with the surface plasma resonance of a metal.

Nonlinear optical composites using linear transparent substances and

A semiconductor laser of the present invention includes: a Zn.sub.1-X Cd.sub.X Se active layer (0&lt;X.ltoreq.0.3); a pair of optical confinement structures for interposing the Zn.sub.1-x Cd.sub.X Se active layer therebetween; and a pair of cladding layers for interposing the optical confinement structures and the Zn.sub.1-X Cd.sub.X Se active layer therebetween, wherein an energy band gap of the optical confinement structure monotonously increases as a distance from the Zn.sub.1-X Cd.sub.X Se active layer increases.

Semiconductor laser

A nonlinear optical material includes nitride layers and non-nitride layers which are alternately deposited, wherein the non-nitride layers include at least one non-nitride selected from the group consisting of oxides, carbides and semiconductors and at least one type of semiconductor fine particles having a band gap smaller than a band gap of the nitride and the non-nitride, which particles are dispersed in the non-nitride layer.

Nonlinear optical material and method of producing the same

A crystal-growth method includes a process of filling three materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other two being ZnSe and ZnS compounds, in their respective effusion cells, and a crystal-growth process of a Zn.sub.1-Y Mg.sub.Y S.sub.Z Se.sub.1-Z (0&lt;Y&gt;1 and 0&lt;Z&gt;1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.

Crystal-growth method and semiconductor device production method using

Ions are implanted to the n-type or p-type semiconductor layers of a semiconductor element, which includes a semiconductor having a multilayer structure on a substrate, a metal electrode on one entire surface of the semiconductor and a metal section partially formed on the metal electrode, in an amount from 10.sup.12 ions/cm.sup.2 to 10.sup.18 ions/cm.sup.2, thus forming an insulating layer in the n-type or p-type semiconductor layers.

Semiconductor element having bivalent and VI group element and an

Non-linear optical materials are formed from amorphous thin films having semiconductor microcrystallites dispersed therein. Amorphous thin films of nitrides or carbides are selected that have a larger bandgap than the bandgap of the semiconductor materials which form the dispersed microcrystallites in order to prevent the surfaces of the microcrystallites from undergoing chemical reactions such as oxidation and the like. The non-linear optical materials are prepared by a sputtering method in which a target formed from the semiconductor material and a separate target formed from the nitrides or carbides are sputtered to produce the non-linear optical material.

Nonlinear optical materials and their manufacturing method

This invention is directed to new non-linear optical materials and methods for manufacturing these materials. A new materials are non-oxide amorphous thin films which are doped with semiconductor microcrystallites. The use of non-oxide materials as the amorphous thin film prevents the occurrence of undesirable chemical reactions, such as the oxidation of the semiconductor microcrystallites doped therein. The disclosed materials may be manufactured by simultaneously sputtering a target of the selected semiconductor material and a target of the non-oxide amorphous material. Alternatively, reactive sputtering in a non-oxide gas environment may be utilized to deposit the non-oxide amorphous material doped with semiconductor microcrystallites.

A compound semiconductor thin film is grown on a compound semiconductor surface, which is cleaned by irradiating the surface with gas containing at least hydrogen molecules and by efficiently removing contaminant on the surface at low temperature. A beam containing at least hydrogen molecules is irradiated from a plasma generating room attached to a MBE chamber, and cleans the surface of a compound semiconductor at low temperature. By an additional mechanism attached to the MBE chamber, a compound semiconductor thin film of high quality is grown on the cleaned surface of the compound semiconductor.

Method of manufacturing a compound semiconductor

Disclosed is a photo semiconductor material characterized in the blue to ultraviolet wavelength region. The semiconductor is firmed by lattice matching a sulfide-selenide manganese-zinc epitaxial mixed crystal film to the substrate. A blue laser diode is fabricated by forming a double hereto quantum well structure on a substrate by using sulfide-selenide manganese-zinc mixed crystal films as clad layers. A zinc molecular beam, a manganese molecular beam, a sulfur molecular beam, and a selenium molecular beam are simultaneously emitted onto a GaAs substrate in an ultrahigh vacuum, and a mixed crystal of Zn.sub.1-x Mn.sub.x S.sub.y Se.sub.1-y (0&lt;x&lt;1, 0&lt;y&lt;1) is obtained. In particular, the molecular beam pressure is adjusted so as to lattice matched to the substrate. As the material for the substrate, for example, GaAs and ZnSe may be used. Moreover, on an n-type GaAs single crystal substrate, a 2 .mu.m thick chlorine doped n-type Zn.sub.0.8 Mn.sub.0.2 S.sub.0.2 Se.sub.0.8 a layer, a 50 nanometer thick ZnSe active layer, and a 1 .mu.m thick nitrogen doped p-type Zn.sub.0.8 Mn.sub.0.2 S.sub.0.2 Se.sub.0.8 layer are formed. An Au electrode layer and an In electrode layer are formed at both sides of this structure, and an optical resonator by cleavage mirror is formed. This laser diode emits coherent light in the blue light spection at room temperature in the pulse current injection condition.

Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and

The invention provides a reflector for a semiconductor device which oscillates in the region from the near infrared region to the visible and short wavelength region, and a method of manufacturing the reflector. With an RF magnetron sputtering apparatus, a dielectric reflector of deposited films is formed on an end-face of a ZnSe semiconductor laser device. The deposited films are formed by 3 repetitions of alternately depositing an SiO.sub.2 film and a TiO.sub.2 film which each has an optical thickness of a quarter of the oscillating wavelength of the semiconductor laser device such that a reflectance at the oscillating wavelength of the laser device is over 90%. The dielectric reflector improves current--light output characteristics of the laser device compared to a conventional semiconductor laser device provided with no dielectric reflector.

Reflector for semiconductor laser end-face and method of manufacturing

This invention relates to a pn-junction device, especially a blue light-emitting diode and a method of the manufacturing thereof. The pn-junction is formed between a superlattice region and a n-type semiconductor region, the superlattice region consisting of a plurality of stacked pairs of ZnSe semiconductor layer and acceptor-impurity-doped ZnS.sub.0.12 Se.sub.0.88 mixed crystal semiconductor layer formed on a part of a buffer layer of ZnS.sub.0.06 Se.sub.0.94 etc. which is formed on a crystalline substrate of GaAs etc., the n-type semiconductor region being formed on the part of the buffer layer, where the superlattice is not formed, and the side wall of the superlattice region contiguous to the n-type region to form pn-junction being made clean by etching, so that a pn-junction of n-type semiconductor and p-type semiconductor having high carrier-density resulted.

Method of manufacturing pn-junction device II-VI compound semiconductor

Nonlinear, optical thin-films comprising a plurality of island structures of semiconductor ultra-fine particles and a plurality of continuous films of an optically transparent material, said island structures and said continuous films being applied alternately on a substrate. A method for manufacturing nonlinear, optical thin-films comprising the steps of: (a) providing a substrate; (b) depositing an island structure of semiconductor ultra-fine particles on the substrate or a continuous film; and (c) depositing the continuous film of optically transparent substance on the island structure; (d) the steps (b) and (c) of depositing an island structure and the continuous film being performed alternately.

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Hirakata, Japan

Tsuneo Mitsuyu