Hitachi, Ltd.

Hitchi, Ltd.

Tsuneo Ichiguchi

Yasuo Wada

Hiroshi Yamaguchi

Shoji Shukuri

Tohru Ishitani

Shinji Sakano

Seiichi Kondo

Koji Ishida

Fumikazu Itoh

Keiya Saito

Masao Tamura

Tsuyoshi Uda

Tokuo Kure

Satoshi Watanabe

Masukazu Igarashi

Tomihiro Hashizume

Hisashi Nagano

Shinji Okazaki

Yoshimasa Murayama

Munehisa Mitsuya

Seiji Heike

Akito Sakurai

Mark Lutwyche

A superfine electronic device is disclosed, which is constructed by atomic fine lines having a structure in which a plurality of atoms are arranged on one or a plurality of straight lines, in a ring shape or on curves with a size of atomic level, and which includes elements for doping electrons and holes. Using these atomic fine lines, it is possible to integrate semiconductor elements utilizing pn junctions at an atomic level with a high density. A groove having a sufficiently small size is formed in an insulating film disposed on a substrate. Then, atoms or molecules are supplied on the substrate and in the groove, which and are heated to a temperature sufficiently high for moving the atoms or molecules during or after the supply thereof to form a quantum fine line at edge portions of the groove.

Superfine electronic device and method for making same

A device according to the present invention is a miniaturized efficient device wherein electromechanical transduction is enabled and which is provided with at least an integrated electrostatic actuator provide with an actuator in which a fixed portion and a movable portion are opposite, a plurality of which are arranged and the relative amount of movement of which is controlled by controlling electrostatic force operating between both, the movable portion moved by the integrated electrostatic actuator and a portion connected to the movable portion which can be operated mechanically. The probe of a scanning probe microscope is provided to the movable portion of the above actuator. The above transducer is provided with the structure in which a large number of such actuators are arranged two- or one-dimensionally.

Micro-fabricated device with integrated electrostatic actuator

In an atomic switch, opposite ends of an atom wire are connected to an input and output, and a switching gate is connected to a switching power supply. An input signal is outputted when a switching atom is connected to the atom wire, whereas an input signal is not outputted when the switching atom is moved to disconnect from the atom wire. There are provided an atom wire having a plurality of atoms arranged in a line or in a plurality of lines, in a ring shape, or in a curved line, and a switching gate made of an atom wire. The atom wire is switched by the field effect of the switching gate.

Atomic switching devices and logical circuits

Disclosed is an apparatus for forming a device having a fine structure, the apparatus including a high intensity ion source. The apparatus can be used to form fine grooves and/or a fine film, by supplying a reactive gas to the surface to be etched or coated while irradiating a focused ion beam on the surface. A laser or electron beam can be irradiated on substantially the same axis as that of the focused ion beam, whereby defects arising due to ion beam processing can be repaired. The apparatus can further include ion beam current detection and measurement structure to determine when a predetermined thickness of coating or depth of etching is achieved. The apparatus can include multiple chambers sequentially holding the surface treated, and can include a scanning electron microscope for scanning the surface being coated or etched.

Device having superlattice structure, and method of and apparatus for

An ion beam (113) focused into a diameter of at most 0.1 .mu.m bombards substantially perpendicularly to the superlattice layers of a one-dimensional superlattice structure and is scanned rectilinearly in a direction of the superlattice layers so as to form at least two parallel grooves (108, 109, 110, 111) or at least two parallel impurity-implanted parts (2109) as potential barrier layers, whereby a device of two-dimensional superlattice structure can be manufactured. At least two parallel grooves (114, 115, 116, 117) or impurity-implanted parts are further formed orthogonally to the potential barrier layers of the two-dimensional superlattice structure, whereby a device of three-dimensional superlattice structure can be manufactured. In addition, deposition parts (2403, 2404, 2405) may well be provided by further depositing an insulator into the grooves (108, 109, 110, 111, 114, 115, 116, 117) which are formed by the scanning of the ion beam. Owing to these expedients, the portions of the two-dimensional and three-dimensional superlattice structures can be manufactured with ease and at high precision.

Method of manufacturing devices having superlattice structures

Growing community of inventors

Saitama-ken, Japan

Tsuneo Ichiguchi