Mitsubishi Electric Corporation

Nec Corporation

Tsuneo Hamaguchi

Daisuke Echizenya

Shinsuke Miyamoto

Shota Sato

Yoshimi Yabugaki

Tomohiro Tanishita

Jun Fujita

Yuji Shirakata

Kenta Fujii

Takashi Okamuro

Kiyoshi Ishida

Hiroo Sakamoto

Nobuhiro Endo

Takashi Shirase

Ikio Sugiura

Tomoo Takayama

Masaki Iwata

A semiconductor device is provided that has high electromagnetic wave shielding properties while exhibiting good heat dissipation. The semiconductor device includes a semiconductor package bonded onto a circuit board, an electromagnetic wave absorbing layer covering surfaces of the semiconductor package other than a surface bonded to the circuit board, and an electromagnetic wave reflecting layer covering the electromagnetic wave absorbing layer on a side remote from the semiconductor package, in which the electromagnetic wave absorbing layer is made of resin containing magnetic particles or carbon, and the electromagnetic wave reflecting layer is made of resin containing conductive particles.

Semiconductor device having electromagnetic wave absorbing layer with heat dissipating vias

An electromagnetic wave absorption sheet is arranged to contact an upper surface and side surfaces of an electronic component mounted on a wiring board, a heat conduction plate is arranged to contact the electromagnetic wave absorption sheet, a heat transfer sheet is arranged to contact the heat conduction plate, and a heat dissipation member is arranged to contact the heat transfer sheet. Heat conductive particles contained in the heat transfer sheet contact a flat surface portion of the heat conduction plate. The electromagnetic wave absorption sheet, the heat conduction plate, and the heat transfer sheet are interposed between the heat dissipation member and the electronic component, as a heat conduction member for conducting heat generated in the electronic component and the like to the heat dissipation member.

Semiconductor device and method for manufacturing the same and wireless communication apparatus

A printed board includes an insulating layer, and radiation vias penetrating printed board are formed in both a first region overlapping electronic component and a second region outside the first region. A plurality of conductor layers included in printed board are cross-connected to a plurality of radiation vias. Diffusion radiator includes a thermal diffusion plate, a radiation member, and a cooling body. Radiation member is in close contact with one of main surfaces of cooling body, and thermal diffusion plate is in close contact with one of main surfaces of radiation member on the opposite side to cooling body. One of main surfaces of thermal diffusion plate on the opposite side to radiation member is bonded to a conductor layer on the other main surface of printed board so as to close the plurality of radiation vias.

Semiconductor device

A solar cell module in the present invention includes: a wiring member electrically connecting solar cell elements to each other; and a structure in which a solder bonding portion is formed by bonding a collecting electrode, which is provided on a light receiving surface of the solar cell element, extends in a first direction parallel to the wiring member, and has a width smaller than that of the wiring member in a cross section vertical to the first direction, and the wiring member together by melting solder, a cross-sectional shape of the solder bonding portion vertical to the first direction has a shape that gradually narrows toward the collecting electrode from a lower surface of the wiring member, and a side surface of the solder bonding portion and a side surface of the wiring member are covered with a thermosetting resin.

Solar cell module and manufacturing method thereof

A plurality of thin linear thin wire electrodes are formed entirely over a first surface that is a light receiving surface of a solar cell element, a back surface collecting electrode is formed on a second surface that is a back surface of the solar cell element, and a wiring member which draws power is connected to each of the thin wire electrode and the back surface collecting electrode. The thin wire electrode and the wiring member are bonded with solder and side surfaces of the solder bonding portion in a longitudinal direction along the wiring member are coated with a thermosetting resin, and, in a region excluding the thin wire electrodes, the wiring member and the first surface are bonded with a thermosetting resin. The wiring member and the thin wire electrodes are bonded to have a sufficient mechanical bonding strength and high bonding reliability.

A method of manufacturing a semiconductor device, has the steps of forming an element on a semiconductor substrate, adhering an element formation surface of the semiconductor substrate to another substrate through an insulating adhesive layer, removing the semiconductor substrate till the element formation layer is exposed, forming an insulating film on the element formation layer, removing the insulating film at a portion where contact holes are to be formed to expose the element formation layer or till the underlying element formation layer is exposed to expose electrode wirings, and forming wiring patterns connected thereto. A bipolar transistor manufactured by this method is also disclosed.

Semiconductor device and method of manufacturing the same

Growing community of inventors

Tokyo, Japan

Tsuneo Hamaguchi