Renesas Technology Corp.

Tsuneo Endou

Yu Hasegawa

Yuji Shirai

Hirokazu Nakajima

Yasuo Osone

Chiko Yorita

Kenya Kawano

Satoru Konishi

Seiichi Tomoi

A semiconductor device capable of reducing the thermal resistance in a flip chip packaging structure while achieving both the high radiation performance and manufacturing readiness without increasing the manufacturing cost is provided. In a semiconductor device having a semiconductor circuit for power amplification and a control circuit of the semiconductor circuit laminated on a multilayer circuit board, the semiconductor circuit for power amplification and the control circuit are aligned in parallel on the same semiconductor element, and the semiconductor element is flip-chip connected on the multilayer circuit board. Further, a second semiconductor element mounted in addition to the first semiconductor element and all components and submodules are flip-chip connected. Also, a plurality of bumps are united in order to improve the radiation performance and thermal vias of the multilayer circuit board are formed in second and lower layers of the wiring layers in the multilayer circuit board.

Semiconductor device

Growing community of inventors

Komoro, Japan

Tsuneo Endou